公开(公告)号：US11931683B2

公开(公告)日：2024-03-19

申请号：US17502463

申请日：2021-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Seok Roh ,  Suji Gim ,  Heesub Kim ,  Hee Ock Park ,  Jongyong Bae ,  Sung Chul Yoon ,  Sunsoo Lee ,  Dong Keun Jeon ,  Jinkyoung Joo

IPC: B01D47/06 ,  H01J37/32 ,  B08B9/08

CPC classification number: B01D47/06 ,  H01J37/32844 ,  B08B9/0813

Abstract: A scrubber system may include a scrubber housing including a vertically extended cleaning space, an inflow chamber coupled to a bottom portion of the scrubber housing, and first and second inflow portions, each of which is configured to supply a gas into the inflow chamber. The inflow chamber may include a mixing space, and the mixing space may be connected to the cleaning space. The first inflow portion may include a first connection pipe coupled to the inflow chamber to provide a first connection path and the second inflow portion may include a second connection pipe coupled to the inflow chamber to provide a second connection path. The first and second connection paths may be extended toward the mixing space in opposite directions, respectively, and may be connected to opposite portions of the mixing space, respectively.

公开(公告)号：US20210062339A1

公开(公告)日：2021-03-04

申请号：US16858054

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghoon Han ,  Seoyoung Maeng ,  Byounghoon Ji ,  Minjoon Kim ,  Jongyong Bae ,  Kyuho Lee

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/52 ,  H01L21/285

Abstract: A gas supply for a layer deposition apparatus including a plurality of charge distribution lines connected to a first gas supply source and a plurality of gas filling tanks respectively connected to the charge distribution lines is disclosed. Each of the gas filling tanks may be pressurized with a first gas from the first gas supply source, and a gas supply line connected to a second gas supply source. The apparatus may include a multi-dosing valve assembly connected to outlet portions of the gas filling tanks and configured to supply, sequentially, the first gas from the gas filling tanks to a process chamber. The multi-dosing valve assembly may include a flow path block having a main supply line connected to the process chamber and a backflow prevention valve block fastened to the flow path block and having an opening/closing valve therein.

公开(公告)号：US11738299B2

公开(公告)日：2023-08-29

申请号：US17372855

申请日：2021-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suji Gim ,  Sunwoo Yook ,  Youngduk Ko ,  Youngseok Roh ,  Seoyoung Maeng ,  Jongyong Bae ,  Jihnkoo Lee ,  Jungjoon Pyeon ,  Jongha Hwang

IPC: B01D53/04 ,  H01L21/67

CPC classification number: B01D53/0454 ,  B01D53/0438 ,  B01D2253/102 ,  B01D2253/112 ,  B01D2257/204 ,  B01D2258/0216 ,  H01L21/67017

Abstract: An exhaust gas processing system including a process chamber in which an exhaust gas is produced; an exhaust gas measurer receiving the exhaust gas and measuring a concentration of the exhaust gas; a solid producing gas processor receiving the exhaust gas and removing a solid producing gas contained in the exhaust gas; a gas supply supplying dilution and cooling gases to the solid producing gas processor; a processed gas measurer receiving, as a processed gas, the exhaust gas free of the solid producing gas and measuring a temperature of the processed gas and ingredients of the processed gas; and a controller receiving results of measurement of the concentration of the exhaust gas from the exhaust gas measurer and results of measurement of the temperature of the processed gas and the ingredients of the processed gas from the exhaust gas measurer and controlling the gas supply based on the measurement results.

公开(公告)号：US11549178B2

公开(公告)日：2023-01-10

申请号：US17510532

申请日：2021-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suji Gim ,  Sunwoo Yook ,  Youngduk Ko ,  Youngseok Roh ,  Seoyoung Maeng ,  Jongyong Bae ,  Jihnkoo Lee ,  Jungjoon Pyeon ,  Jongha Hwang

IPC: C23C16/455 ,  B01J35/00 ,  B01J35/04 ,  B01D53/94 ,  B01J37/08

Abstract: An apparatus and method for treating a semiconductor process gas comprises a gas inlet allowing a treatment target gas (or gas to be treated) to flow therethrough; a catalytic reaction portion including a catalyst and configured to allow the treatment target gas to be brought into contact with the catalyst; a space velocity controller between the gas inlet and the catalytic reaction portion, the space velocity controller extending from the gas inlet in a diagonal direction in relation to the gas inlet; a differential pressure buffer portion between the space velocity controller and the catalytic reaction portion and including a filter; and a gas outlet configured to externally discharge a product formed as the treatment target gas comes into contact with the catalyst.

公开(公告)号：US20220143543A1

公开(公告)日：2022-05-12

申请号：US17380109

申请日：2021-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seoyoung Maeng ,  Iljun Jeon ,  Suji Gim ,  Youngseok Roh ,  Jongyong Bae ,  Jungjoon Pyeon

IPC: B01D50/00 ,  B01D45/16 ,  B01D45/08 ,  B01D46/48 ,  B01D46/42

Abstract: An apparatus for collecting a by-product, includes: a chamber provided with a gas inlet and a gas outlet and having an internal space; a heater disposed on the gas inlet side of the internal space within the chamber and varying a heating temperature in time series; a vortex forming member disposed around the heater; a plurality of first collecting members disposed below the heater; a second collecting member disposed below the first collecting member so that a plurality of second collecting members intersect each other; and a third collecting member disposed on the gas outlet side of the internal space within the chamber.

公开(公告)号：US11660563B2

公开(公告)日：2023-05-30

申请号：US17380109

申请日：2021-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seoyoung Maeng ,  Iljun Jeon ,  Suji Gim ,  Youngseok Roh ,  Jongyong Bae ,  Jungjoon Pyeon

IPC: B01D50/20 ,  B01D45/16 ,  B01D46/48 ,  B01D46/42 ,  B01D45/08

CPC classification number: B01D50/20 ,  B01D45/08 ,  B01D45/16 ,  B01D46/4263 ,  B01D46/48 ,  B01D2279/51

Abstract: An apparatus for collecting a by-product, includes: a chamber provided with a gas inlet and a gas outlet and having an internal space; a heater disposed on the gas inlet side of the internal space within the chamber and varying a heating temperature in time series; a vortex forming member disposed around the heater; a plurality of first collecting members disposed below the heater; a second collecting member disposed below the first collecting member so that a plurality of second collecting members intersect each other; and a third collecting member disposed on the gas outlet side of the internal space within the chamber.

公开(公告)号：US11476151B2

公开(公告)日：2022-10-18

申请号：US16825352

申请日：2020-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Ji ,  Seoyoung Maeng ,  Minjoon Kim ,  Jongyong Bae ,  Jiho Uh ,  Hongtaek Lim ,  Donghoon Han

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

公开(公告)号：US11220748B2

公开(公告)日：2022-01-11

申请号：US16858054

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghoon Han ,  Seoyoung Maeng ,  Byounghoon Ji ,  Minjoon Kim ,  Jongyong Bae ,  Kyuho Lee

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  H01L21/285 ,  C23C16/458 ,  H01L27/11582

Abstract: A gas supply for a layer deposition apparatus including a plurality of charge distribution lines connected to a first gas supply source and a plurality of gas filling tanks respectively connected to the charge distribution lines is disclosed. Each of the gas filling tanks may be pressurized with a first gas from the first gas supply source, and a gas supply line connected to a second gas supply source. The apparatus may include a multi-dosing valve assembly connected to outlet portions of the gas filling tanks and configured to supply, sequentially, the first gas from the gas filling tanks to a process chamber. The multi-dosing valve assembly may include a flow path block having a main supply line connected to the process chamber and a backflow prevention valve block fastened to the flow path block and having an opening/closing valve therein.

公开(公告)号：US20210074574A1

公开(公告)日：2021-03-11

申请号：US16825352

申请日：2020-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Ji ,  Seoyoung Maeng ,  Minjoon Kim ,  Jongyong Bae ,  Jiho Uh ,  Hongtaek Lim ,  Donghoon Han

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67

Abstract: A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.