公开(公告)号：US20240249925A1

公开(公告)日：2024-07-25

申请号：US18390956

申请日：2023-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEHYUN KIM ,  Kookjin Ann ,  Suji Gim ,  Taijong Sung ,  Sunwoo Yook ,  Young Heo

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32899 ,  H01J2237/327

Abstract: An exhaust gas processing apparatus includes a first chamber and a second chamber in parallel between a processing chamber and an exhaust pump, at least one foreline connecting the first chamber and the second chamber to the processing chamber and the exhaust pump, a first plasma source connected to the first chamber and the second chamber, and a second plasma source connected to the first chamber and the second chamber, wherein the first plasma source generates a first treatment material, and the second plasma source generates a second treatment material, different from the first treatment material.

公开(公告)号：US11738299B2

公开(公告)日：2023-08-29

申请号：US17372855

申请日：2021-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suji Gim ,  Sunwoo Yook ,  Youngduk Ko ,  Youngseok Roh ,  Seoyoung Maeng ,  Jongyong Bae ,  Jihnkoo Lee ,  Jungjoon Pyeon ,  Jongha Hwang

IPC: B01D53/04 ,  H01L21/67

CPC classification number: B01D53/0454 ,  B01D53/0438 ,  B01D2253/102 ,  B01D2253/112 ,  B01D2257/204 ,  B01D2258/0216 ,  H01L21/67017

Abstract: An exhaust gas processing system including a process chamber in which an exhaust gas is produced; an exhaust gas measurer receiving the exhaust gas and measuring a concentration of the exhaust gas; a solid producing gas processor receiving the exhaust gas and removing a solid producing gas contained in the exhaust gas; a gas supply supplying dilution and cooling gases to the solid producing gas processor; a processed gas measurer receiving, as a processed gas, the exhaust gas free of the solid producing gas and measuring a temperature of the processed gas and ingredients of the processed gas; and a controller receiving results of measurement of the concentration of the exhaust gas from the exhaust gas measurer and results of measurement of the temperature of the processed gas and the ingredients of the processed gas from the exhaust gas measurer and controlling the gas supply based on the measurement results.

公开(公告)号：US11549178B2

公开(公告)日：2023-01-10

申请号：US17510532

申请日：2021-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suji Gim ,  Sunwoo Yook ,  Youngduk Ko ,  Youngseok Roh ,  Seoyoung Maeng ,  Jongyong Bae ,  Jihnkoo Lee ,  Jungjoon Pyeon ,  Jongha Hwang

IPC: C23C16/455 ,  B01J35/00 ,  B01J35/04 ,  B01D53/94 ,  B01J37/08

Abstract: An apparatus and method for treating a semiconductor process gas comprises a gas inlet allowing a treatment target gas (or gas to be treated) to flow therethrough; a catalytic reaction portion including a catalyst and configured to allow the treatment target gas to be brought into contact with the catalyst; a space velocity controller between the gas inlet and the catalytic reaction portion, the space velocity controller extending from the gas inlet in a diagonal direction in relation to the gas inlet; a differential pressure buffer portion between the space velocity controller and the catalytic reaction portion and including a filter; and a gas outlet configured to externally discharge a product formed as the treatment target gas comes into contact with the catalyst.