公开(公告)号：US20230420248A1

公开(公告)日：2023-12-28

申请号：US18176692

申请日：2023-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjun AHN ,  Hongtaek Lim ,  Kyoungwoo Hong ,  Hanhim Kang ,  Yeongyeop Song

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/285

CPC classification number: H01L21/0228 ,  H01L21/0217 ,  H01L21/02167 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02208 ,  H01L21/32051 ,  H01L21/28506

Abstract: A method of depositing an atomic layer of a metal-containing film including a plurality of deposition cycles is provided. Each of the plurality of deposition cycles may include adsorbing a hydrogen (H)-containing compound on a wafer surface in a chamber, treating a wafer on which the H-containing compound is adsorbed with hydrogen (H2) gas, and providing a metal precursor to the wafer to react with the H-containing compound to form the metal-containing film.

公开(公告)号：US11476151B2

公开(公告)日：2022-10-18

申请号：US16825352

申请日：2020-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Ji ,  Seoyoung Maeng ,  Minjoon Kim ,  Jongyong Bae ,  Jiho Uh ,  Hongtaek Lim ,  Donghoon Han

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

公开(公告)号：US20210202217A1

公开(公告)日：2021-07-01

申请号：US17027460

申请日：2020-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hongtaek Lim ,  Junghyeon Kim ,  Sanggon Shin ,  Oleg FEYGENSON ,  Kyuho Lee ,  Donghoon Han ,  Kwangpyo Hong

IPC: H01J37/32 ,  C23C16/458

Abstract: An edge ring includes an annular body portion having a bottom surface and a top surface, a first step portion extending along an inner periphery of the body portion and having an annular first bottom surface positioned higher than the bottom surface of the body portion by a first height, an inclined portion extending along an inner periphery of the first step portion and having an inclined bottom surface extending at a first angle with respect to a first plane in which the first bottom surface is placed, a second step portion extending along an inner periphery of the inclined portion and having a second bottom surface positioned higher than the bottom surface of the body portion by a second height greater than the first height, and a plurality of passages extending outwardly from the first bottom surface of the first step portion at a second angle with respect to the first bottom surface.

公开(公告)号：US20210074574A1

公开(公告)日：2021-03-11

申请号：US16825352

申请日：2020-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Ji ,  Seoyoung Maeng ,  Minjoon Kim ,  Jongyong Bae ,  Jiho Uh ,  Hongtaek Lim ,  Donghoon Han

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67

Abstract: A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

公开(公告)号：US10468234B2

公开(公告)日：2019-11-05

申请号：US15208787

申请日：2016-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongtaek Lim ,  Kangsoo Kim ,  Hojun Kim ,  Jeonghoon Nam ,  Sejun Park

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

Abstract: A semiconductor device fabricating apparatus includes a gas mixer having an upper surface and a lower surface, each of the upper and lower surfaces has an elliptical plane, and a side surface connecting the upper and lower surfaces, a gas inlet pipe on an upper portion of the gas mixer, and a gas outlet pipe on a lower portion of the gas mixer.