公开(公告)号：US20230420248A1

公开(公告)日：2023-12-28

申请号：US18176692

申请日：2023-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjun AHN ,  Hongtaek Lim ,  Kyoungwoo Hong ,  Hanhim Kang ,  Yeongyeop Song

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/285

CPC classification number: H01L21/0228 ,  H01L21/0217 ,  H01L21/02167 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02208 ,  H01L21/32051 ,  H01L21/28506

Abstract: A method of depositing an atomic layer of a metal-containing film including a plurality of deposition cycles is provided. Each of the plurality of deposition cycles may include adsorbing a hydrogen (H)-containing compound on a wafer surface in a chamber, treating a wafer on which the H-containing compound is adsorbed with hydrogen (H2) gas, and providing a metal precursor to the wafer to react with the H-containing compound to form the metal-containing film.