公开(公告)号：US20240026539A1

公开(公告)日：2024-01-25

申请号：US18197919

申请日：2023-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suncheul Kim ,  Donghyun LEE ,  Uihyoung LEE ,  Donghoon Han

IPC: C23C16/52 ,  C23C16/505 ,  C23C16/448

CPC classification number: C23C16/52 ,  C23C16/505 ,  C23C16/4486

Abstract: Provided is a flow rate control method, including: supplying fluid from a valve to a first sensor; measuring, by the first sensor, a first temperature of the fluid, and heating the fluid; measuring, by a second sensor, a second temperature of the heated fluid, and determining, by a controller, a first flow rate of the fluid based on comparison between the first temperature and the second temperature; supplying the fluid to a chamber and supplying an ignition voltage to the chamber through a radio frequency (RF) power source; measuring, by a third sensor, the ignition voltage; comparing, by the controller, the ignition voltage and a reference voltage to determine a second flow rate of the fluid; and controlling a supply of the fluid from the valve based on at least one of the first flow rate and or the second flow rate.

公开(公告)号：US11871563B2

公开(公告)日：2024-01-09

申请号：US17568117

申请日：2022-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suncheul Kim ,  Donghyun Lee ,  Uihyoung Lee

IPC: H10B12/00

CPC classification number: H10B12/485

Abstract: A contact forming method may include providing a semiconductor substrate including a silicon oxide film to an interior of a chamber, subjecting a surface of the silicon oxide film to plasma nitrification treatment, supplying a source gas including TiCl4 and H2 onto the silicon oxide film subjected to the plasma nitrification treatment, and forming a barrier layer by igniting a plasma using the source gas.

公开(公告)号：US12247290B2

公开(公告)日：2025-03-11

申请号：US18197919

申请日：2023-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suncheul Kim ,  Donghyun Lee ,  Uihyoung Lee ,  Donghoon Han

IPC: C23C16/52 ,  C23C16/448 ,  C23C16/505

Abstract: Provided is a flow rate control method, including: supplying fluid from a valve to a first sensor; measuring, by the first sensor, a first temperature of the fluid, and heating the fluid; measuring, by a second sensor, a second temperature of the heated fluid, and determining, by a controller, a first flow rate of the fluid based on comparison between the first temperature and the second temperature; supplying the fluid to a chamber and supplying an ignition voltage to the chamber through a radio frequency (RF) power source; measuring, by a third sensor, the ignition voltage; comparing, by the controller, the ignition voltage and a reference voltage to determine a second flow rate of the fluid; and controlling a supply of the fluid from the valve based on at least one of the first flow rate and or the second flow rate.

公开(公告)号：US12238923B2

公开(公告)日：2025-02-25

申请号：US18524794

申请日：2023-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suncheul Kim ,  Donghyun Lee ,  Uihyoung Lee

IPC: H10B12/00

Abstract: A contact forming method may include providing a semiconductor substrate including a silicon oxide film to an interior of a chamber, subjecting a surface of the silicon oxide film to plasma nitrification treatment, supplying a source gas including TiCl4 and H2 onto the silicon oxide film subjected to the plasma nitrification treatment, and forming a barrier layer by igniting a plasma using the source gas.