公开(公告)号：US20230238330A1

公开(公告)日：2023-07-27

申请号：US18055530

申请日：2022-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myungho KONG ,  Sukhoon Kim ,  Hoon Cho

IPC: H01L23/535 ,  H01L23/532 ,  H01L27/11582 ,  H01L27/11573

CPC classification number: H01L23/535 ,  H01L23/53209 ,  H01L23/53252 ,  H01L23/53266 ,  H01L27/11582 ,  H01L27/11573

Abstract: A vertical semiconductor device includes insulation patterns, channel structures, a first metal pattern structure and a second metal pattern. The insulation patterns are spaced apart from each other in a vertical direction. Each insulation pattern extends in a first direction parallel to the upper surface of a substrate. The channel structures pass through the insulation patterns. The first metal pattern structure include at least one first metal material, and extend in the first direction. The first metal pattern structure are positioned in a gap between adjacent insulation patterns in the vertical direction, and the first metal pattern structure is at a central portion of the gap. The second metal pattern includes a metal material that is different from the at least one first metal material, the second metal pattern may be on opposite sidewalls of the first metal pattern structure to fill a remainder portion of the gap.