Abstract:
A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.
Abstract:
Provided is a substrate treating apparatus including a housing; a plurality of opening-and-closing members configured to provide a driving force for opening and closing the housing; a fluid storing member supplying a fluid to the opening-and-closing members; and a fluid distribution unit connected to the fluid storing member via a supply conduit to distribute the fluid supplied from the fluid storing member to the opening-and-closing members. The fluid distribution unit includes a distribution conduit diverging from the supply conduit and connected to a corresponding one of the opening-and-closing members; and a fluid distribution member provided at a junction between the supply conduit and the distribution conduit.
Abstract:
A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.
Abstract:
A semiconductor device includes a storage node contact on a substrate, and a lower electrode on the storage node contact, a lower sidewall of the lower electrode being covered by a contact residue of a same material as the storage node contact.
Abstract:
A substrate treating method may include jetting a fluid containing an abrasive onto a substrate, and polishing the substrate using the jetted fluid.
Abstract:
A method of manufacturing a semiconductor device includes: forming a pattern on a surface of a semiconductor substrate; placing the substrate on a platform of a substrate treatment apparatus; rotating the wafer while applying a cleaning liquid from a first nozzle and a wetting liquid from a second nozzle to treat a first region on the surface of the substrate; vertically changing the distance of the second nozzle together with the first nozzle with respect to the platform; after the vertical change, rotating the wafer while applying the cleaning liquid from the first nozzle and the wetting liquid from the second nozzle to treat a second region on the surface of the substrate; and forming a semiconductor device from the treated substrate.
Abstract:
Provided is a substrate treating apparatus including a housing; a plurality of opening-and-closing members configured to provide a driving force for opening and closing the housing; a fluid storing member supplying a fluid to the opening-and-closing members; and a fluid distribution unit connected to the fluid storing member via a supply conduit to distribute the fluid supplied from the fluid storing member to the opening-and-closing members. The fluid distribution unit includes a distribution conduit diverging from the supply conduit and connected to a corresponding one of the opening-and-closing members; and a fluid distribution member provided at a junction between the supply conduit and the distribution conduit.