Abstract:
A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.
Abstract:
A data collecting/processing system includes a recipe generator configured to define a plurality of recipes based on a user setting signal, each of the plurality of recipes representing one of data collecting schemes and data processing schemes; a register configured to store the plurality of recipes; and an execution part configured to perform a plurality of data collecting operations by obtaining data from an external system, configured to perform a plurality of data processing operations on the obtained data, and configured to provide results of the plurality of data processing operations to the external system, the plurality of data collecting operations and the plurality of data processing operations being performed based on the plurality of recipes and a plurality of job messages for a plurality of products treated by the external system.
Abstract:
A wafer inspection apparatus includes: a stage configured such that a wafer is arranged on the stage; an optical apparatus configured to align the wafer on the stage and generate an optical intensity image including an optical intensity profile; a focus adjusting unit configured to align light incident onto the wafer to be in-focus; and an image processor configured to integrate the optical intensity image with vertical level data of the in-focus to generate and analyze a three-dimensional (3D) image.
Abstract:
Disclosed are an inspection method, an inspection system, and a method of fabricating a semiconductor package using the same. The inspection method comprises obtaining a reference value by measuring a surface profile of a reference pattern, scanning reference images of the reference pattern by using a plurality of optical inspection conditions, obtaining estimation values of the reference pattern that are measured from the reference images, selecting an desired optical inspection condition among the plurality of optical inspection conditions by comparing the reference value with the estimation values, scanning a target image of a target pattern by using the desired optical inspection condition, and obtaining an error value by quantitatively comparing the target image with a design image of the target pattern.
Abstract:
A method of fabricating a package includes providing a mold substrate supporting dies in cavities of a fan-out substrate, detecting positions of the dies with respect to the fan-out substrate, and forming interconnection lines. At least one of the interconnection lines includes a first portion extending from the fan-out substrate to a target position on the cavity disposed between the fan-out substrate and one of the dies the one of the dies disposed at a detected position different from the target position, and a second portion extending from the one die to the fan-out substrate.
Abstract:
A measuring apparatus includes a stage including a transmissive wafer chuck on which a sample wafer is provided, where the sample wafer includes a silicon substrate and at least one material layer on the silicon substrate, a light source unit including a light source configured to generate and output a femtosecond laser beam, and a confocal laser-induced terahertz (THz) emission microscopy (LTEM) unit configured to generate multi-photon excitation by splitting the femtosecond laser beam into four sub-laser beams and causing three sub-laser beams among the four sub-laser beams to be incident in an overlapping manner on a measurement position of the sample wafer, where the confocal LTEM unit is configured to generate the multi-photon excitation based on the three sub-laser beams being incident on a lower surface of the silicon substrate.
Abstract:
A method of measuring misalignment of chips, a method of fabricating a fan-out panel level package using the same, and a fan-out panel level package fabricated thereby are provided. The measuring method may include obtaining images by scanning chips on a substrate, obtaining absolute offsets of reference chips with respect to the substrate in the images, obtaining relative offsets of subordinate chips with respect to the reference chips in the images, and calculating misalignments of the chips based on the absolute offsets and the relative offsets.
Abstract:
A substrate inspection system includes a substrate support, optics configured to irradiate a patterned structure on the substrate and capture images of the patterned structure from light reflected from the patterned structure, a focus adjustment operative to adjust a focal position of the incident light on the patterned structure, and an image processor configured to calculate an optimal value of a focus offset used to establish focal points of the light for defect detection in the patterned structure. The patterned structure may include a first pattern having an opening and a second pattern having top surfaces located at different heights relative to the substrate. The value of the focus offset is determined using images of the top surfaces of the second pattern obtained while changing the focal position of the incident light.
Abstract:
A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.
Abstract:
A measuring system measures an overall resistance of two or more films on a substrate/measurement object by a terahertz absorption measurement and an overall film thickness by a photoacoustic measurement. The system estimates a first film thickness based on the overall resistance, then subtracts this estimated thickness from the overall film thickness measured by the photoacoustic measurement. The system includes a source unit to output a laser beam. A first pump-probe unit receives the laser beam and performs a photoacoustic test on the measurement object. A second pump-probe unit receives the laser beam and performs a terahertz signal test on the measurement object. The system also includes a stage to support the measurement object and controls for controlling elements and calculating the film thicknesses