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公开(公告)号:US20250147096A1
公开(公告)日:2025-05-08
申请号:US18790237
申请日:2024-07-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jaewon Yang , Younghoon Sohn , Souk Kim , Jaeho Kim , Jongbeom Kim , HyeonBo Shim , Minho Rim
IPC: G01R31/265
Abstract: A substrate inspection apparatus includes a laser light source configured to emit a laser beam, an optical splitter configured to split the laser beam into a first laser beam and a second laser beam, a delay stage configured to change a relative time delay of the second laser beam and optically connected to the optical splitter, a first modulator optically connected to the optical splitter and configured to change the first laser beam, and a feedback system configured to sense the second laser beam reflected from a substrate and configured to apply electrical feedback to the first modulator.
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公开(公告)号:US12110938B2
公开(公告)日:2024-10-08
申请号:US17718423
申请日:2022-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyunchul Kim , Souk Kim , Younghoon Sohn
IPC: F16F15/02
CPC classification number: F16F15/02
Abstract: A vibration isolation table of the disclosure may include a lower structure including a plurality of block structures, a middle structure on the lower structure, and an upper structure on the middle structure. The plurality of block structures may be spaced apart from one another such that a space is formed between adjacent ones of the plurality of block structures. At least one of the lower structure and the upper structure may include high attenuation concrete.
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3.
公开(公告)号:US20240241067A1
公开(公告)日:2024-07-18
申请号:US18460675
申请日:2023-09-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seungchul Lee , Younghoon Sohn
IPC: G01N23/223 , G01N23/207 , H01L21/66
CPC classification number: G01N23/223 , G01N23/207 , H01L22/12 , G01N2223/6116
Abstract: An apparatus for measuring a thickness of a metal layer includes a light source unit configured to generate X-rays, a detection unit configured to detect the X-rays diffracted from a specimen, and a processor configured to measure the thickness of the metal layer of the specimen using an intensity of the X-rays diffracted from the specimen.
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4.
公开(公告)号:US20230194567A1
公开(公告)日:2023-06-22
申请号:US17878414
申请日:2022-08-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwangeun Kim , Seungbum Hong , Sungyoon Ryu , Hoon Kim , Jiwon Yeom , Seokjung Yun , Souk Kim , Younghoon Sohn , Yusin Yang
CPC classification number: G01Q40/00 , H01L22/12 , G01Q70/10 , H01L27/10876
Abstract: A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.
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公开(公告)号:US20240295490A1
公开(公告)日:2024-09-05
申请号:US18237589
申请日:2023-08-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeho Kim , Younghoon Sohn , Sunhong Jun
IPC: G01N21/25 , G01N21/956
CPC classification number: G01N21/255 , G01N21/956 , G01N2201/06113 , G01N2201/0683
Abstract: A measurement apparatus includes a light source assembly configured to emit light to a sample, a measuring device configured to measure reflected light, and a stage on which the sample is provided, where the light source assembly includes a first plate, a plurality of light sources connected to the first plate and a blocking panel comprising a hole, and one of the plurality of light sources is aligned with the hole in a first direction.
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公开(公告)号:US20240255274A1
公开(公告)日:2024-08-01
申请号:US18425830
申请日:2024-01-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Changi Jeon , Younghoon Sohn
Abstract: Provided is a complex sensing device including a thickness sensing device including pulse generating device configured to generate a probe pulse and a pump pulse, a first optical splitter configured to split the probe pulse and direct the pump pulse to a surface of a sample and generate an acoustic signal in the sample, a detector configured to receive a reflection probe pulse generated by the probe pulse being reflected from the sample, a first processor configured to receive and process a first signal from the detector, and a second optical splitter on a path of the reflection probe pulse from the sample to the detector, the second optical splitter being configured to split the reflection probe pulse, and a surface shape sensing device configured to receive a split probe pulse split from the first optical splitter and a split reflection probe pulse split from the second optical splitter, and measure a surface shape of the sample based on a phase difference between the split probe pulse and the split reflection probe pulse.
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公开(公告)号:US20240230528A1
公开(公告)日:2024-07-11
申请号:US18389028
申请日:2023-11-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sunhong Jun , Inkeun Baek , Wontae Kim , Namil Koo , Ingi Kim , Sungyoon Ryu , Younghoon Sohn , Yusin Yang , Ikseon Jeon , Eunhyuk Choi
IPC: G01N21/3581 , G01N21/95 , H01L21/66
CPC classification number: G01N21/3581 , G01N21/9501 , H01L22/12
Abstract: A measuring apparatus includes a stage including a transmissive wafer chuck on which a sample wafer is provided, where the sample wafer includes a silicon substrate and at least one material layer on the silicon substrate, a light source unit including a light source configured to generate and output a femtosecond laser beam, and a confocal laser-induced terahertz (THz) emission microscopy (LTEM) unit configured to generate multi-photon excitation by splitting the femtosecond laser beam into four sub-laser beams and causing three sub-laser beams among the four sub-laser beams to be incident in an overlapping manner on a measurement position of the sample wafer, where the confocal LTEM unit is configured to generate the multi-photon excitation based on the three sub-laser beams being incident on a lower surface of the silicon substrate.
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公开(公告)号:US10720365B2
公开(公告)日:2020-07-21
申请号:US15584166
申请日:2017-05-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Younghoon Sohn , Yusin Yang
IPC: H01L21/66 , H01L23/00 , H01L25/065 , H01L25/00 , G01B11/27 , G01R31/28 , G01R31/265 , G01R31/311
Abstract: A method of measuring misalignment of chips, a method of fabricating a fan-out panel level package using the same, and a fan-out panel level package fabricated thereby are provided. The measuring method may include obtaining images by scanning chips on a substrate, obtaining absolute offsets of reference chips with respect to the substrate in the images, obtaining relative offsets of subordinate chips with respect to the reference chips in the images, and calculating misalignments of the chips based on the absolute offsets and the relative offsets.
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公开(公告)号:US20250167051A1
公开(公告)日:2025-05-22
申请号:US18765917
申请日:2024-07-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seonghyeon Hwang , Euijong Whang , Hyunsoo Kwak , Sung Yoon Ryu , Sooseok Lee , Younghoon Sohn
Abstract: A method of operating an electronic device includes selecting, by at least one processor, M first sample-label pairs (M being a positive integer); obtaining, by the at least one processor, M K-values; selecting, by the at least one processor, M second sample-label pairs respectively corresponding to the M first sample-label pairs based on the M K-values, generating, by the at least one processor, M third sample-label pairs based on the M first sample-label pairs and the M second sample-label pairs, and training, by the at least one processor, a regression analysis module based on the M third sample-label pairs, and the regression analysis module is trained to predict labels, which are associated with the semiconductor device, from the M third sample-label pairs.
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公开(公告)号:US20240255439A1
公开(公告)日:2024-08-01
申请号:US18367784
申请日:2023-09-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Heeyoon Han , Donghoon Kim , Sungyoon Ryu , Younghoon Sohn , Sunhong Jun
CPC classification number: G01N21/9501 , G01N21/31 , G06N20/00
Abstract: A defect detection method includes radiating light onto a substrate, obtaining a spectrum image, performing an electrical die sorting (EDS) test on the substrate, inspecting defects of each of a plurality of blocks of the substrate based on a result of the EDS test, generating a defect map, generating spectrum image information by matching the spectrum image with the defect map, training a defect detection model by using the defect grade as an output value and the spectrum image information as an input value, obtaining a target spectrum image with respect to a target substrate, extracting a feature vector from the target spectrum image by using the defect detection model, and detecting a target defect grade of the target spectrum image based on the feature vector, and generating a target defect map based on the target defect grade.
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