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公开(公告)号：US11017525B2
公开(公告)日：2021-05-25
申请号：US16541380
申请日：2019-08-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae Hyung Ahn , Souk Kim , Joon Seo Song , Young Hoon Sohn , Yu Sin Yang
Abstract: A semiconductor pattern detecting apparatus is provided. The semiconductor pattern detecting apparatus includes a stage configured to position a wafer formed with a semiconductor pattern, the stage extending in a first direction and a second direction perpendicular to the first direction, an electron emitter configured to irradiate first electrons on the semiconductor pattern, an electrode configured to generate an electric field to induce an electric potential on a surface of the semiconductor pattern, a detector configured to detect second electrons emitted from the semiconductor pattern, an imager configured to obtain a plurality of first images by using the second electrons detected by the detector, and at least one controller configured to apply a first voltage and a second voltage different from the first voltage to the electrode alternately and repeatedly and to generate a second image by combining the plurality of first images, wherein the imager is so configured that each of the plurality of first images are obtained when the first voltage is applied to the electrode.
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2.发明授权Method of manufacturing a semiconductor device using semiconductor measurement system 有权使用半导体测量系统制造半导体器件的方法公开(公告)号：US09583402B2
公开(公告)日：2017-02-28
申请号：US14794813
申请日：2015-07-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Yoon Ryu , Wooseok Ko , Souk Kim , Yusin Yang , Sangkil Lee , Chungsam Jun , Kwanwoo Ryu
CPC classification number: H01L22/12 , H01L21/67173 , H01L22/20
Abstract: A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.
Abstract translation: 一种方法包括将衬底加载到感测室中; 同时衬底在感测室中，对衬底进行光谱分析; 在所述感测室和耦合到所述感测室的处理室之间传送所述衬底; 在所述处理室中处理所述衬底以在所述衬底上形成至少第一层和/或图案; 并且至少基于光谱分析，确定是否满足形成第一层和/或图案所引起的参数。
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公开(公告)号：US12092656B2
公开(公告)日：2024-09-17
申请号：US17721522
申请日：2022-04-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungyoon Ryu , Seungbum Hong , Kwangeun Kim , Hoon Kim , Jiwon Yeom , Seokjung Yun , Souk Kim , Younghoon Sohn , Yusin Yang
CPC classification number: G01R1/06727 , G01R1/04
Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.
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公开(公告)号：US20230079008A1
公开(公告)日：2023-03-16
申请号：US17718423
申请日：2022-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunchul Kim , Souk Kim , Younghoon Sohn
IPC: F16F15/02
Abstract: A vibration isolation table of the disclosure may include a lower structure including a plurality of block structures, a middle structure on the lower structure, and an upper structure on the middle structure. The plurality of block structures may be spaced apart from one another such that a space is formed between adjacent ones of the plurality of block structures. At least one of the lower structure and the upper structure may include high attenuation concrete.
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公开(公告)号：US10373796B2
公开(公告)日：2019-08-06
申请号：US15084059
申请日：2016-03-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Souk Kim , Chung-sam Jun , Woo-seok Ko , Sang-kil Lee , Kwang-il Shin , Yu-sin Yang , Min-chul Yoon
Abstract: A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.
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Patent Agency Ranking
公开(公告)号：US11181831B2
公开(公告)日：2021-11-23
申请号：US16558860
申请日：2019-09-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyoung-hwan Lee , Young-ho Kwon , Souk Kim , Young-hoon Sohn , Yu-sin Yang
IPC: G03F7/20
Abstract: A method of manufacturing a semiconductor device includes forming a plurality of overlay molds on a semiconductor structure by developing a photoresist material layer of the semiconductor structure, the semiconductor structure including a first layer having a plurality of overlay marks, the plurality of overlay molds at least partially overlapping at least some of the plurality of overlay marks; and measuring one or more overlays by radiating a light having a wavelength band onto the semiconductor structure, each of the one or more overlays indicating an amount of consistency of the first layer and a second layer of the semiconductor structure, the wavelength band being set based on the plurality of overlay marks and the plurality of overlay molds, the second layer being between the first layer and the photoresist material layer.
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公开(公告)号：US11004712B2
公开(公告)日：2021-05-11
申请号：US16532920
申请日：2019-08-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Yoon Ryu , Joonseo Song , Souk Kim , Younghoon Sohn , Yusin Yang , Chihoon Lee
Abstract: Disclosed are methods of inspecting semiconductor wafers, inspection systems for performing the same, and methods of fabricating semiconductor devices using the same. A method of inspecting a semiconductor wafer including preparing a wafer including zones each having patterns, obtaining representative values for the patterns, scanning the patterns under an optical condition to obtain optical signals for the patterns, each of the optical signals including optical parameters, selecting a representative optical parameter that is one of the optical parameters that has a correlation with the representative values, obtaining a reference value of the representative optical parameter for a reference pattern, and obtaining a defect of an inspection pattern by comparing the reference value with an inspection value of the representative optical parameter for the inspection pattern.
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8.发明授权Apparatus for measuring thickness of thin film, system including the apparatus, and method for measuring thickness of thin film 有权用于测量薄膜厚度的装置，包括该装置的系统以及用于测量薄膜厚度的方法公开(公告)号：US09417055B2
公开(公告)日：2016-08-16
申请号：US14799107
申请日：2015-07-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung-Yoon Ryu , Sang-Kil Lee , Chung-Sam Jun , Woo-Seok Ko , Ho-Jeong Kwak , Souk Kim , Kwan-Woo Ryu , Yu-Sin Yang
CPC classification number: G01B11/0633
Abstract: An apparatus and a system for measuring the thickness of a thin film are provided. The apparatus includes a signal detector, a Fast Fourier Transform (FFT) generator, an Inverse Fast Fourier Transform (IFFT) generator, and a thickness analyzer. The signal detector detects an electric field signal with respect to a reflected light that is reflected from a thin film. The FFT generator performs FFT with respect to the electric field signal to separate a DC component from an AC component of the electric field signal. The IFFT generator receives the separated AC component of the electric field signal, performs IFFT with respect to the AC component, and extracts a phase value of the AC component. The thickness analyzer measures the thickness of the thin film using the extracted phase value.
Abstract translation: 提供了用于测量薄膜厚度的装置和系统。 该装置包括信号检测器，快速傅里叶变换（FFT）发生器，快速傅里叶逆变换（IFFT）发生器和厚度分析器。 信号检测器检测相对于从薄膜反射的反射光的电场信号。 FFT发生器相对于电场信号执行FFT，以将DC分量与电场信号的AC分量分离。 IFFT发生器接收电场信号的分离的AC分量，相对于AC分量执行IFFT，并提取AC分量的相位值。 厚度分析器使用提取的相位值来测量薄膜的厚度。
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公开(公告)号：US20250147096A1
公开(公告)日：2025-05-08
申请号：US18790237
申请日：2024-07-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaewon Yang , Younghoon Sohn , Souk Kim , Jaeho Kim , Jongbeom Kim , HyeonBo Shim , Minho Rim
IPC: G01R31/265
Abstract: A substrate inspection apparatus includes a laser light source configured to emit a laser beam, an optical splitter configured to split the laser beam into a first laser beam and a second laser beam, a delay stage configured to change a relative time delay of the second laser beam and optically connected to the optical splitter, a first modulator optically connected to the optical splitter and configured to change the first laser beam, and a feedback system configured to sense the second laser beam reflected from a substrate and configured to apply electrical feedback to the first modulator.
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公开(公告)号：US12110938B2
公开(公告)日：2024-10-08
申请号：US17718423
申请日：2022-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunchul Kim , Souk Kim , Younghoon Sohn
IPC: F16F15/02
CPC classification number: F16F15/02
Abstract: A vibration isolation table of the disclosure may include a lower structure including a plurality of block structures, a middle structure on the lower structure, and an upper structure on the middle structure. The plurality of block structures may be spaced apart from one another such that a space is formed between adjacent ones of the plurality of block structures. At least one of the lower structure and the upper structure may include high attenuation concrete.
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