公开(公告)号：US10852259B2

公开(公告)日：2020-12-01

申请号：US16115884

申请日：2018-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung Hwan Lee ,  Sang Min Kim ,  Young Hoon Sohn ,  Yu Sin Yang ,  Chi Hoon Lee

IPC: G01N23/223 ,  H01L21/67 ,  H01L21/66

Abstract: An apparatus for X-ray inspection is provided. The apparatus includes: a stage on which an inspection target is loaded, the stage including a first surface and an opposite second surface; an X-ray generator disposed on or over the first surface of the inspection target and configured to irradiate the inspection target with incident X-rays; and a detection system disposed on or under the second surface of the inspection target and configured to detect first transmitted X-rays transmitted through the inspection target. The detection unit includes a first lens system and a second lens system. The first transmitted X-rays pass through one of the first lens system and the second lens system. The second lens system includes a micro zone plate.

公开(公告)号：US20150248127A1

公开(公告)日：2015-09-03

申请号：US14635193

申请日：2015-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yu Sin Yang ,  Young Hoon Sohn ,  Bae Jin Lee ,  Sang Kil Lee ,  Chung Sam Jun

IPC: G05B19/418

CPC classification number: G05B19/418 ,  G05B19/41875 ,  G05B2219/45031 ,  H01L21/3086 ,  H01L22/12 ,  H01L22/20 ,  Y02P90/22

Abstract: A process management system can include a processing device that can be configured to perform a semiconductor process on a plurality of wafers, the processing device controlled by a process parameter. A control device can be configured to acquire statistical data relating to the process parameter and can be configured to select a reference wafer from the plurality of wafers. The control device can be configured to compare a respective process parameter used for the reference wafer with the statistical data and can be configured to set a reference condition for the process parameter.

Abstract translation: 过程管理系统可以包括处理设备，其可被配置为在多个晶片上执行半导体处理，该处理设备由过程参数控制。 控制装置可以被配置为获取与过程参数相关的统计数据，并且可以被配置为从多个晶片中选择参考晶片。 控制装置可以被配置为将用于参考晶片的相应过程参数与统计数据进行比较，并且可以被配置为设置用于过程参数的参考条件。

公开(公告)号：US20240219314A1

公开(公告)日：2024-07-04

申请号：US18469107

申请日：2023-09-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Ho Rim ,  Young Hoon Sohn

IPC: G01N21/95 ,  H01L21/66

CPC classification number: G01N21/9501 ,  H01L22/12

Abstract: A method for manufacturing a semiconductor device includes generating light, modulating power of the light to generate power-modulated light, acquiring an image signal of a measurement target using the power-modulated light, filtering the image signal to separate a real signal and a false signal, analyzing the measurement target using the real signal, and performing a semiconductor process on the measurement target based analyzing the measurement target using the real signal, wherein filtering the image signal includes classifying a first component of the image signal that is dependent on power of the power-modulated light as the real signal, and classifying a second component of the image signal that is independent of the power of the power-modulated light as the false signal.

公开(公告)号：US20190170788A1

公开(公告)日：2019-06-06

申请号：US16130699

申请日：2018-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Duck Mahn Oh ,  Sung Yoon Ryu ,  Young Hoon Sohn ,  Chung Sam Jun ,  Yun Jung Jee

IPC: G01Q60/16 ,  G02B21/00 ,  G01Q80/00

CPC classification number: G01Q60/16 ,  G01Q10/06 ,  G01Q60/30 ,  G01Q80/00 ,  G02B21/002

Abstract: A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.

公开(公告)号：US11017525B2

公开(公告)日：2021-05-25

申请号：US16541380

申请日：2019-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hyung Ahn ,  Souk Kim ,  Joon Seo Song ,  Young Hoon Sohn ,  Yu Sin Yang

IPC: G06T7/00 ,  G06K9/62 ,  G06K9/20

Abstract: A semiconductor pattern detecting apparatus is provided. The semiconductor pattern detecting apparatus includes a stage configured to position a wafer formed with a semiconductor pattern, the stage extending in a first direction and a second direction perpendicular to the first direction, an electron emitter configured to irradiate first electrons on the semiconductor pattern, an electrode configured to generate an electric field to induce an electric potential on a surface of the semiconductor pattern, a detector configured to detect second electrons emitted from the semiconductor pattern, an imager configured to obtain a plurality of first images by using the second electrons detected by the detector, and at least one controller configured to apply a first voltage and a second voltage different from the first voltage to the electrode alternately and repeatedly and to generate a second image by combining the plurality of first images, wherein the imager is so configured that each of the plurality of first images are obtained when the first voltage is applied to the electrode.

公开(公告)号：US10585115B2

公开(公告)日：2020-03-10

申请号：US16130699

申请日：2018-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Duck Mahn Oh ,  Sung Yoon Ryu ,  Young Hoon Sohn ,  Chung Sam Jun ,  Yun Jung Jee

IPC: G01Q60/00 ,  G01Q60/16 ,  G01Q80/00 ,  G02B21/00

Abstract: A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.