公开(公告)号：US20180053295A1

公开(公告)日：2018-02-22

申请号：US15417558

申请日：2017-01-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Yoon Ryu ,  Joon-Seo Song ,  Yu-Sin Yang ,  Chung-Sam Jun ,  Yun-Jung Jee

IPC: G06T7/00 ,  G06T7/11 ,  G06T7/174 ,  G02B21/00 ,  G01N23/225 ,  G01N21/956 ,  G01N21/95 ,  H01J37/22

Abstract: In a defect inspection method, first and second inspection conditions having a first sensitivity of detection signal and having a second sensitivity of a detection signal for a defect of interest (DOI), respectively, are determined. The first and second sensitivities are different. First and second images of the same detection region on a substrate surface under the first and second inspection conditions respectively, are obtained. The first and second images are matched to detect a defect in the detection region.

公开(公告)号：US08759763B2

公开(公告)日：2014-06-24

申请号：US13680347

申请日：2012-11-19

Applicant: Samsung Electronics Co., Ltd

Inventor： Young-Hoon Sohn ,  Jin-Woo Lee ,  Yong-Deok Jeong ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chung-Sam Jun

IPC: G01B15/00 ,  G01N23/225 ,  H01J37/26

CPC classification number: G01B15/00 ,  G01N23/225 ,  G06T7/60 ,  G06T2207/10061 ,  H01J37/222 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/24578 ,  H01J2237/2815 ,  H01J2237/2817

Abstract: A method of measuring a step height of a device using a scanning electron microscope (SEM), the method may include providing a device which comprises a first region and a second region, wherein a step is formed between the first region and the second region, obtaining a SEM image of the device by photographing the device using a SEM, wherein the SEM image comprises a first SEM image region for the first region and a second SEM image region for the second region, converting the SEM image into a gray-level histogram and calculating a first peak value related to the first SEM image region and a second peak value related to the second SEM image region, wherein the first peak value and the second peak value are repeatedly calculated by varying a focal length of the SEM, and determining a height of the step by analyzing a trend of changes in the first peak value according to changes in the focal length and a trend of changes in the second peak value according to the changes in the focal length.

Abstract translation: 使用扫描电子显微镜（SEM）测量器件的台阶高度的方法可以包括提供包括第一区域和第二区域的器件，其中在第一区域和第二区域之间形成台阶， 通过使用SEM拍摄该装置来获得该装置的SEM图像，其中，SEM图像包括用于第一区域的第一SEM图像区域和用于第二区域的第二SEM图像区域，将SEM图像转换为灰度级直方图 以及计算与第一SEM图像区域相关的第一峰值和与第二SEM图像区域相关的第二峰值，其中通过改变SEM的焦距来重复计算第一峰值和第二峰值，并且确定 通过根据焦距的变化分析第一峰值的变化趋势和根据焦距变化的第二峰值变化的趋势的步骤的高度 th。

公开(公告)号：US10593032B2

公开(公告)日：2020-03-17

申请号：US15417558

申请日：2017-01-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Yoon Ryu ,  Joon-Seo Song ,  Yu-Sin Yang ,  Chung-Sam Jun ,  Yun-Jung Jee

IPC: G01N21/95 ,  G01N21/88 ,  G06K9/00 ,  G01B11/00 ,  G06T7/00 ,  G01N21/956 ,  H01L21/66 ,  G02B21/00 ,  G06T7/11 ,  G06T7/174 ,  G01N23/2251 ,  H01J37/22

Abstract: In a defect inspection method, first and second inspection conditions having a first sensitivity of detection signal and having a second sensitivity of a detection signal for a defect of interest (DOI), respectively, are determined. The first and second sensitivities are different. First and second images of the same detection region on a substrate surface under the first and second inspection conditions respectively, are obtained. The first and second images are matched to detect a defect in the detection region.

公开(公告)号：US09897552B2

公开(公告)日：2018-02-20

申请号：US14805439

申请日：2015-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Joong Kim ,  Yong-Deok Jeong ,  Kwang-Soo Kim ,  Byeong-Hwan Jeon ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chung-Sam Jun

IPC: G01N21/47 ,  G01N21/95 ,  G02B26/08 ,  G02B3/00 ,  G02B21/00

CPC classification number: G01N21/9501 ,  G02B3/0006 ,  G02B21/0016 ,  G02B26/0808

Abstract: An optical transformation module includes a light generator generating a parallel light beam to be incident onto a surface of an inspection object and changing a wavelength of the parallel light beam, and a rotating grating positioned on a path of the parallel light beam and rotatable by a predetermined rotation angle such that the parallel light beam is transformed according to the wavelength of the parallel light beam and the rotation angle of the rotating grating to have a desired incidence angle and a desired incidence position onto the surface of the inspection object.

公开(公告)号：US09892983B2

公开(公告)日：2018-02-13

申请号：US14975706

申请日：2015-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Kook Kim ,  Bang-Won Kim ,  Yu-Sin Yang ,  Young-Jee Yoon ,  Sang-Kil Lee ,  Yoo-Seok Jang ,  Chung-Sam Jun

IPC: C30B25/16 ,  H01L21/66 ,  C30B29/40 ,  C30B29/52

CPC classification number: H01L22/26 ,  C30B25/165 ,  C30B29/40 ,  C30B29/52 ,  H01L22/12

Abstract: An apparatus and method of forming an epitaxial layer are provided. The apparatus includes a process chamber in which an epitaxial process is performed to form epitaxial layer on a substrate. A first supplier supplies source gases for the epitaxial layer into the process chamber. A second supplier supplies dopants into the process chamber. A detector detects a composition ratio of the epitaxial layer and a concentration of the dopants in the epitaxial layer during the epitaxial growth process. And a controller controls a mass flow of at least one of the source gases and a mass flow of the dopants in-line with the epitaxial growth process. Accordingly, the layer thickness of the epitaxial layer can be accurately controlled in real time in line with the epitaxial process.

公开(公告)号：US09733178B2

公开(公告)日：2017-08-15

申请号：US14806775

申请日：2015-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Yoon Ryu ,  Woo-Seok Ko ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chung-Sam Jun

IPC: G01N21/21 ,  G01N21/95 ,  G01N21/956

CPC classification number: G01N21/211 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/213

Abstract: Spectral ellipsometry measurement systems are provided including a polarizer that rotates at a first angle and adjusts a polarizing direction of incident light of a measurement sample; a compensator that rotates at a second angle, different from the first angle, and adjusts a phase difference of the incident light; an analyzer that rotates at a third angle and adjusts a polarizing direction of light reflected on the measurement sample; a detector that detects a spectral image from the reflected light; a controller that controls one of the polarizer, the compensator, and the analyzer according to polarizer-compensator-analyzer (PCA) angle sets including the first to third angles; and a processor that receives, from the detector, a first spectral image corresponding to a first PCA angle set and a first wavelength and a second spectral image corresponding to a second PCA angle set and a second wavelength, different from the first wavelength, and generates a polarizer-compensator-analyzer rotating (PCAR) spectral matrix using the first and second spectral images.

公开(公告)号：US09417055B2

公开(公告)日：2016-08-16

申请号：US14799107

申请日：2015-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Yoon Ryu ,  Sang-Kil Lee ,  Chung-Sam Jun ,  Woo-Seok Ko ,  Ho-Jeong Kwak ,  Souk Kim ,  Kwan-Woo Ryu ,  Yu-Sin Yang

IPC: G01B11/28 ,  G01B11/06

CPC classification number: G01B11/0633

Abstract: An apparatus and a system for measuring the thickness of a thin film are provided. The apparatus includes a signal detector, a Fast Fourier Transform (FFT) generator, an Inverse Fast Fourier Transform (IFFT) generator, and a thickness analyzer. The signal detector detects an electric field signal with respect to a reflected light that is reflected from a thin film. The FFT generator performs FFT with respect to the electric field signal to separate a DC component from an AC component of the electric field signal. The IFFT generator receives the separated AC component of the electric field signal, performs IFFT with respect to the AC component, and extracts a phase value of the AC component. The thickness analyzer measures the thickness of the thin film using the extracted phase value.

Abstract translation: 提供了用于测量薄膜厚度的装置和系统。 该装置包括信号检测器，快速傅里叶变换（FFT）发生器，快速傅里叶逆变换（IFFT）发生器和厚度分析器。 信号检测器检测相对于从薄膜反射的反射光的电场信号。 FFT发生器相对于电场信号执行FFT，以将DC分量与电场信号的AC分量分离。 IFFT发生器接收电场信号的分离的AC分量，相对于AC分量执行IFFT，并提取AC分量的相位值。 厚度分析器使用提取的相位值来测量薄膜的厚度。

公开(公告)号：US09939388B2

公开(公告)日：2018-04-10

申请号：US15183003

申请日：2016-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Choon-Shik Leem ,  Woo-Jin Jung ,  Chung-Sam Jun

IPC: G01N21/00 ,  G01N21/88 ,  H01L21/67 ,  G01N21/95

CPC classification number: G01N21/8851 ,  G01N21/9501 ,  G01N2021/8861 ,  G01N2021/8887 ,  H01L21/67288

Abstract: A wafer inspection apparatus including a derivation unit configured to derive a first polar coordinate set and a second polar coordinate set using a latin hypercube sampling, the first and second polar coordinate sets not overlapping each other, an inspection unit configured to perform defect inspections of a plurality of wafers using the first and second polar coordinate sets, a support unit configured to support the wafers, and an calculation unit configured to combine a defect inspection result using the first polar coordinate set with a defect inspection result using the second polar coordinate set may be provided.

公开(公告)号：US09659743B2

公开(公告)日：2017-05-23

申请号：US14963654

申请日：2015-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Hwan Kim ,  Min-Kook Kim ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chung-Sam Jun

IPC: H01J37/22 ,  H01J37/21 ,  H01J37/285 ,  H01J37/31

CPC classification number: H01J37/222 ,  H01J37/28 ,  H01J37/285 ,  H01J37/31 ,  H01J2237/226 ,  H01J2237/2445 ,  H01J2237/2527 ,  H01J2237/2561

Abstract: A spatial image having 2D spatial information is obtained from a surface of a sample by an image creating method. The surface of the sample is milled to obtain an elemental image having material information from the milled surface. The spatial image and the elemental image are composed to form a 2D spatial/elemental image.

公开(公告)号：US10969428B2

公开(公告)日：2021-04-06

申请号：US15283466

申请日：2016-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Hoon Sohn ,  Chung-Sam Jun ,  Yu-Sin Yang

IPC: G01R31/302 ,  G01R31/28 ,  G01R31/307

Abstract: Provided is a method of inspecting a pattern defect. The method includes: applying a voltage to an object to be inspected and measuring an inspection signal generated in a pattern of the object to be inspected due to the voltage applied to the object to be inspected over time; generating an intensity image showing a relationship between an intensity of the inspection signal measured in the pattern and a time by processing the inspection signal; and detecting a pattern defect position by comparing the intensity image with a comparative intensity image.