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    Wafer inspection apparatus and method
    2.
    发明授权
    Wafer inspection apparatus and method 有权

    公开(公告)号：US11579096B2

    公开(公告)日：2023-02-14

    申请号：US17116708

    申请日：2020-12-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sungha Kim ,  Hyounggon Kim ,  Doohyun Cho ,  Kwangsung Lee ,  Jongsu Kim ,  Taejoong Kim ,  Jeongsu Ha

    IPC: G01N21/95 ,  G01B11/06

    Abstract: A thickness estimating apparatus includes a transfer robot, a light source, a camera, a memory and a controller. The memory stores a thickness predicting model generated based on a data set including a thickness of at least one of a test wafer corresponding to the wafer or a test element layer formed on the test wafer, and the thickness predicting model being trained to minimize a loss function of the data set. The controller applies pixel data, which is acquired from at least one pixel selected from a plurality of pixels included in a captured image, to the thickness predicting model, to predict a thickness of at least one of the wafer or an element layer formed on the wafer in a position corresponding to a position of the selected pixel.

    Semiconductor substrate measuring apparatus and plasma treatment apparatus using the same
    3.
    发明授权
    Semiconductor substrate measuring apparatus and plasma treatment apparatus using the same 有权

    公开(公告)号：US11488875B2

    公开(公告)日：2022-11-01

    申请号：US16847727

    申请日：2020-04-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junbum Park ,  Younghwan Kim ,  Jongsu Kim ,  Youngjoo Lee ,  Yoojin Jeong

    IPC: G01B11/06 ,  G01J5/00 ,  G01B9/02 ,  H01L21/66 ,  G01N21/95 ,  H01J37/32

    Abstract: A semiconductor substrate measuring apparatus includes a light source to generate irradiation light having a sequence of on/off at a predetermined interval, the light source to provide the irradiation light to a chamber with an internal space for processing a semiconductor substrate using plasma, an optical device between the light source and the chamber, the optical device to split a first measurement light into a first optical path, condensed while the light source is turned on, to split a second measurement light into a second optical path, condensed while the light source is turned off, and to synchronize with the on/off sequence, and a photodetector connected to the first and second optical paths, the photodetector to subtract spectra of first and second measurement lights to detect spectrum of reflected light, and to detect plasma emission light emitted from the plasma based on the spectrum of the second measurement light.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240405073A1

    公开(公告)日：2024-12-05

    申请号：US18538290

    申请日：2023-12-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyumin Yoo ,  Myung Gil Kang ,  Dongwon Kim ,  Jongsu Kim ,  Changwoo Noh ,  Beomjin Park ,  Soojin Jeong ,  Woosuk Choi

    IPC: H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

    Abstract: A semiconductor device is provided including an active pattern disposed on a substrate, a source/drain pattern on the active pattern, a channel pattern configured to electrically connect the source/drain patterns and including stacked semiconductor patterns spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, a gate pattern configured to cross between the source/drain patterns in a second direction parallel to the upper surface of the substrate, on the channel pattern, and to have a main gate portion and sub-gate portions, and inner gate spacers between the sub-gate portions and the source/drain pattern. A first distance between adjacent source/drain patterns along a given one of the sub-gate portions in the second direction is greater than a second distance between adjacent source/drain patterns passing through the semiconductor patterns in the second direction.

    INTEGRATED CIRCUIT DEVICE
    5.
    发明公开
    INTEGRATED CIRCUIT DEVICE 审中-公开

    公开(公告)号：US20240321961A1

    公开(公告)日：2024-09-26

    申请号：US18613338

    申请日：2024-03-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jongsu Kim ,  Myunggil Kang ,  Dongwon Kim ,  Beomjin Park ,  Inhyun Song ,  Hyumin Yoo ,  Yujin Jeon

    IPC: H01L29/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

    CPC classification number: H01L29/0673 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

    Abstract: An integrated circuit device includes, a first nano-sheet stack including a plurality of nano-sheets arranged on a fin-type active region extending in a first horizontal direction, a gate line extending in a second horizontal direction on the fin-type active region, a vertical structure contacting the plurality of nano-sheets, and a first gate dielectric layer disposed between the gate line and the plurality of nano-sheets and between the gate line and the vertical structure, wherein the gate line includes a first sub-gate portion disposed under each of the plurality of nano-sheets, the first gate dielectric layer includes a first portion disposed between the gate line and the plurality of nano-sheets, and a second portion disposed between the first sub-gate portion and the vertical structure, and a thickness of the second portion in the second horizontal direction is greater than a thickness of the first portion in the vertical direction.

    THICKNESS ESTIMATION METHOD AND PROCESSING CONTROL METHOD
    6.
    发明申请
    THICKNESS ESTIMATION METHOD AND PROCESSING CONTROL METHOD 有权

    公开(公告)号：US20220065618A1

    公开(公告)日：2022-03-03

    申请号：US17214830

    申请日：2021-03-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jongsu Kim ,  Wansung Park ,  Doohyun Cho ,  Sungha Kim ,  Jaeyoun Wi ,  Kijoo Hong ,  Taejoong Kim ,  Youngsu Ryu ,  Kwangsung Lee ,  Min Hong

    IPC: G01B11/06 ,  G01N21/95 ,  G01N21/84 ,  G06T7/00

    Abstract: A thickness estimation method may include: obtaining a test spectrum image; obtaining test spectrum data; measuring a thickness of a test layer formed on the test substrate at the plurality of positions; generating a regression analysis model using a correlation between the thickness of the test layer and the test spectrum data; obtaining a spectrum image; and estimating a thickness of a target layer over the entire area of the semiconductor substrate by applying the spectrum image to the regression analysis model. The thickness corresponding to the entire area of the semiconductor substrate that is being transferred is estimated using the thickness estimation method according to an exemplary embodiment in the present disclosure, such that whether or not processing is normally performed may be examined without requiring a separate time. In addition, an examination result may be feedbacked to processing equipment to improve production yield.

    SEMICONDUCTOR DEVICE
    7.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240322012A1

    公开(公告)日：2024-09-26

    申请号：US18602274

    申请日：2024-03-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Byeonghee Son ,  Myunggil Kang ,  Dongwon Kim ,  Jongsu Kim ,  Changwoo Noh ,  Beomjin Park

    IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

    CPC classification number: H01L29/66553 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

    Abstract: A semiconductor device including an active region extending in a first horizontal direction, a nanosheet stack apart from the active region, a plurality of gate structures extending in a second horizontal direction and including a plurality of gate electrodes, a plurality of source/drain regions arranged on sidewalls of the gate structures, and a device isolation layer extending in a vertical direction, wherein the plurality of gate structures include a first gate structure in which a source/drain region is arranged on one sidewall and the device isolation layer is arranged on the other sidewall, and a second gate structure in which source/drain regions are arranged on both sidewalls, wherein the plurality of gate electrodes of the first gate structure include a main gate electrode positioned at the uppermost end and a plurality of sub-gate electrodes, and an internal spacer is between the device isolation layer and the plurality of sub-gate electrodes.

    Electronic device and payment method using the same
    8.
    发明授权
    Electronic device and payment method using the same 有权

    公开(公告)号：US12093955B2

    公开(公告)日：2024-09-17

    申请号：US17903564

    申请日：2022-09-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gawon Lee ,  Daehaeng Cho ,  Seunghyeon Cho ,  Jongsu Kim

    IPC: G06Q20/40

    CPC classification number: G06Q20/4014 ,  G06Q20/405

    Abstract: An electronic device is provided. The electronic device includes a communication module communicable with an external device, a display, a memory, and at least one processor operatively connected to the communication module, wherein the at least one processor is configured to display at least one image and/or text related to payment information on the display in response to at least a part of a user input, determine whether to start a payment process in response to identification of a user authentication, transmit a first signal for requesting an authentication to the external device in response to identification of an approach of the external device within a predetermined distance from the electronic device, and transmit a second signal related to the payment process in response to identification of an authentication of the external device, and determine whether to complete the payment process using the electronic device.

    Electronic device for providing service by using secure element, and operating method thereof
    10.
    发明授权
    Electronic device for providing service by using secure element, and operating method thereof 有权

    公开(公告)号：US11921857B2

    公开(公告)日：2024-03-05

    申请号：US17277600

    申请日：2019-09-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Taeckki Lee ,  Jongsu Kim ,  Eunyoung Kwon ,  Dasom Lee ,  Daehaeng Cho

    IPC: G06F21/57 ,  G06F21/71 ,  G06F21/78

    CPC classification number: G06F21/57 ,  G06F21/71 ,  G06F21/78 ,  G06F2221/034

    Abstract: Various embodiments of the present invention relate to an electronic device for providing a service by using a secure element, and an operating method thereof. The electronic device comprises: a processor for acquiring secure state information of the electronic device; and a secure element operating under the control of the processor, receiving the secure state information of the electronic device from the processor, and including a repository for storing the received secure state information of the electronic device, wherein the secure element senses a security-related service request command, acquires the secure state information about the electronic device from the repository, and can process or ignore the sensed security-related service request command on the basis of whether the acquired secure state information of the electronic device satisfies a designated condition. Other embodiments are also possible.

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