公开(公告)号：US20220278135A1

公开(公告)日：2022-09-01

申请号：US17745427

申请日：2022-05-16

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok SON ,  Myounghwa KIM ,  Jaybum KIM ,  Yeon Keon MOON ,  Masataka KANO

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.

公开(公告)号：US20200235181A1

公开(公告)日：2020-07-23

申请号：US16836490

申请日：2020-03-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KYOUNGSEOK SON ,  Dohyun KWON ,  Jonghan JEONG ,  Jonghyun CHOI ,  Eoksu KIM ,  Jaybum KIM ,  Junhyung LIM ,  Jihun LIM

IPC: H01L27/32 ,  G09G3/3225 ,  G09G3/3233

Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.

公开(公告)号：US20190312061A1

公开(公告)日：2019-10-10

申请号：US16371433

申请日：2019-04-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoung Seok SON ,  Myounghwa KIM ,  Jaybum KIM ,  Yeon Keon MOON ,  Masataka KANO

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.

公开(公告)号：US20190341408A1

公开(公告)日：2019-11-07

申请号：US16515153

申请日：2019-07-18

Applicant: Samsung Display Co., Ltd.

Inventor： Jihun LIM ,  Jaybum KIM ,  Joonseok PARK ,  Kyoungseok SON ,  Junhyung LIM

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/788 ,  H01L29/786 ,  H01L29/49

Abstract: A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.

公开(公告)号：US20180248045A1

公开(公告)日：2018-08-30

申请号：US15724600

申请日：2017-10-04

Applicant: Samsung Display Co., Ltd.

Inventor： Junhyung LIM ,  Jaybum KIM ,  Kyoungseok SON ,  Jihun LIM

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/322 ,  H01L51/52 ,  H01L27/12 ,  H01L27/32 ,  H01L29/04 ,  H01L29/423

Abstract: A semiconductor device may include a base substrate, a first thin-film transistor (“TFT”) provided on the base substrate, a second TFT provided on the base substrate, and a plurality of insulating layers provided on the base substrate to define at least one dummy hole that is not overlapped with the first and second TFTs. The first TFT may include a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor material, and the second TFT may include a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor material. A shortest distance between the at least one dummy hole and the second semiconductor pattern may be equal to or shorter than 5 micrometers (μm), in a plan view.

公开(公告)号：US20190252478A1

公开(公告)日：2019-08-15

申请号：US16254297

申请日：2019-01-22

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok SON ,  Jaybum KIM ,  Yeon Keon MOON ,  Jun Hyung LIM

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L27/1251 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258

Abstract: An organic light emitting display device includes a substrate, a first semiconductor element, a second semiconductor element, an insulation layer structure, and a light emitting structure. The substrate has a first region and a second region that is adjacent to the first region. The insulation layer structure is disposed between a second gate electrode and a second active layer of the second semiconductor element. The insulation layer structure includes a first insulation layer having a first etching rate, a second insulation layer disposed on the first insulation layer and having a second etching rate that is greater than the first etching rate, and a third insulation layer disposed on the second insulation layer and having a third etching rate that is less than the second etching rate in a same etching process. The light emitting structure is disposed on the insulation layer structure.

公开(公告)号：US20180076238A1

公开(公告)日：2018-03-15

申请号：US15657508

申请日：2017-07-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jihun LIM ,  Jaybum KIM ,  Joonseok PARK ,  Kyoungseok SON ,  Junhyung LIM

IPC: H01L27/12 ,  H01L29/788 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/1251 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66825 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/788 ,  H01L2227/323

Abstract: A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.

公开(公告)号：US20180061921A1

公开(公告)日：2018-03-01

申请号：US15685183

申请日：2017-08-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungseok SON ,  Dohyun KWON ,  Jonghan JEONG ,  Jonghyun CHOI ,  Eoksu KIM ,  Jaybum KIM ,  Junhyung LIM ,  Jihun LIM

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0413 ,  G09G2300/0426 ,  G09G2310/08 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3258 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869

Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.

公开(公告)号：US20220102458A1

公开(公告)日：2022-03-31

申请号：US17417632

申请日：2019-03-06

Applicant: Samsung Display Co., Ltd.

Inventor： Myounghwa KIM ,  Jaybum KIM ,  Kyoung-seok SON ,  Seungjun LEE ,  Seunghun LEE ,  Jun-hyung LIM

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting display device includes a substrate including a first region and a second region, a first transistor, the first transistor including a first active layer having a source region and a drain region disposed in the first region on the substrate, a first gate electrode disposed on the first active layer, a first source electrode disposed on the first gate electrode, the first source electrode being connected to the source region, a sacrificial layer structure disposed to be spaced apart from the first source electrode, the sacrificial layer structure having an opening, a protective insulating layer disposed on the first source electrode and the sacrificial layer structure, and a first drain electrode disposed on the protective insulating layer, and a sub-pixel structure disposed on the first transistor.

公开(公告)号：US20220028963A1

公开(公告)日：2022-01-27

申请号：US17414355

申请日：2019-03-06

Applicant: Samsung Display Co., Ltd.

Inventor： Seunghun LEE ,  Myounghwa KIM ,  Jaybum KIM ,  Kyoung-seok SON ,  Seungjun LEE ,  Jun-hyung LIM

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting display device includes a substrate including a light emitting region, a first active layer having a source region and a drain region disposed in the light emitting region on the substrate, a gate insulation layer disposed on the first active layer, a first gate electrode disposed on the gate insulation layer, a first insulating interlayer disposed on the first gate electrode, a second insulating interlayer disposed on the first insulating interlayer, a first source electrode disposed on the second insulating interlayer, the first source electrode being connected to the source region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the second insulating interlayer, a protective insulating layer disposed on the first source electrode, a first drain electrode disposed on the protective insulating layer, the first drain electrode being connected to the drain region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the protective insulating layer, the first drain electrode constituting a driving transistor together with the first active layer, the first gate electrode, and the first source electrode, a switching transistor disposed in the second region between the substrate and the protective insulating layer, a lower electrode disposed on the switching transistor and the driving transistor, a light emitting layer disposed on the lower electrode, and an upper electrode disposed on the light emitting layer.