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    Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis
    4.
    发明授权
    Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis 失效
    用于测量衬底特性或制备用于分析的衬底的方法和系统

    公开(公告)号：US08765496B2

    公开(公告)日：2014-07-01

    申请号：US12110759

    申请日：2008-04-28

    申请人： Mehran Nasser-Ghodsi ,  Mark Borowicz ,  Dave Bakker ,  Mehdi Vaez-Iravani ,  Prashant Aji ,  Rudy Garcia ,  Tzu Chin Chuang

    发明人： Mehran Nasser-Ghodsi ,  Mark Borowicz ,  Dave Bakker ,  Mehdi Vaez-Iravani ,  Prashant Aji ,  Rudy Garcia ,  Tzu Chin Chuang

    IPC分类号： H01L21/00

    CPC分类号： H01J37/317 ,  G01N1/32 ,  H01J37/244 ,  H01J37/3005 ,  H01J2237/2814 ,  H01J2237/3174 ,  H01J2237/31745

    摘要： Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

    摘要翻译： 提供了用于测量基板的特性或准备用于分析的基板的方法和系统。 用于测量衬底的特性的一种方法包括使用电子束去除衬底上的特征的一部分以暴露特征的剩余部分的横截面轮廓。 该特征可以是光致抗蚀剂特征。 该方法还包括测量横截面轮廓的特性。 制备用于分析的基板的方法包括使用化学蚀刻与电子束结合来去除靠近缺陷的衬底上的材料的一部分。 缺陷可能是地下缺陷或部分地下缺陷。 制备用于分析的衬底的另一种方法包括使用化学蚀刻与电子束和光束组合地去除邻近缺陷的衬底上的材料的一部分。

    Three-dimensional imaging using electron beam activated chemical etch
    5.
    发明授权
    Three-dimensional imaging using electron beam activated chemical etch 失效
    使用电子束激活化学蚀刻的三维成像

    公开(公告)号：US07709792B2

    公开(公告)日：2010-05-04

    申请号：US11622758

    申请日：2007-01-12

    申请人： Mehran Naser-Ghodsi ,  Tzu-Chin Chuang ,  Kenneth Krzeczowski ,  Matthew Lent ,  Chris Huang ,  Stanislaw Marek Borowicz

    发明人： Mehran Naser-Ghodsi ,  Tzu-Chin Chuang ,  Kenneth Krzeczowski ,  Matthew Lent ,  Chris Huang ,  Stanislaw Marek Borowicz

    IPC分类号： H01J37/28 ,  H01J37/305 ,  G01N23/225

    CPC分类号： H01J37/28 ,  H01J2237/226 ,  H01J2237/2611 ,  H01J2237/3174

    摘要： Methods and apparatus for imaging a structure and a related processor-readable medium are disclosed. A surface of a substrate (or a portion thereof) is exposed to a gas composition. The gas composition includes one or more components that etch the substrate upon activation by interaction with a beam of electrons. A beam of electrons is directed to one or more portions of the surface of the substrate that are exposed to the gas composition to etch the one or more portions. A plurality of images is obtained of the one or more portions at different instances of time as the one or more portions are etched. A three-dimensional model of one or more structures embedded within the one or more portions of the substrate is generated from the plurality of images.

    摘要翻译： 公开了用于对结构进行成像和相关处理器可读介质的方法和装置。 将基材（或其一部分）的表面暴露于气体组合物。 气体组合物包括一种或多种在通过与电子束的相互作用激活时蚀刻衬底的组分。 电子束被引导到暴露于气体组合物的衬底的表面的一个或多个部分以蚀刻一个或多个部分。 当蚀刻一个或多个部分时，在不同的时间点获得一个或多个部分的多个图像。 从多个图像生成嵌入在基板的一个或多个部分内的一个或多个结构的三维模型。

    Thin-film structure with tapered feature
    6.
    发明授权
    Thin-film structure with tapered feature 失效
    具有锥形特征的薄膜结构

    公开(公告)号：US5528082A

    公开(公告)日：1996-06-18

    申请号：US235010

    申请日：1994-04-28

    申请人： Jackson H. Ho ,  Robert R. Allen, deceased ,  Tzu-Chin Chuang

    发明人： Jackson H. Ho ,  Robert R. Allen, deceased ,  Tzu-Chin Chuang

    IPC分类号： B05D7/00 ,  G02F1/1362 ,  H01L21/033 ,  H01L21/203 ,  H01L21/306 ,  H01L21/3213 ,  H01L23/48 ,  H01L23/52 ,  H01L27/01 ,  H01L29/76

    CPC分类号： H01L21/0337 ,  H01L21/32139 ,  G02F1/136286 ,  Y10S257/92

    摘要： A feature in a thin-film structure such as an AMLCD array has an edge with a tapered sidewall profile, reducing step coverage problems. The feature can be produced by producing a layer in which local etch rates vary in the thickness direction of the layer. The layer can then be etched to produce the feature with the tapered sidewall profile. The layer can be produced by physical vapor deposition. The layer can, for example, includes sublayers with different etch rates, either due to different atomic proportions of constituents or due to different etchants. Or local etch rates can vary continuously as a result of changing deposition conditions. Differences in etch rates or differences in etchant mixtures can be used to obtain a desired angle of elevation.

    摘要翻译： 诸如AMLCD阵列之类的薄膜结构中的特征具有边缘具有锥形侧壁轮廓，从而减少了步骤覆盖问题。 该特征可以通过产生其中局部蚀刻速率在层的厚度方向上变化的层来产生。 然后可以蚀刻该层以产生具有锥形侧壁轮廓的特征。 该层可以通过物理气相沉积产生。 例如，该层可以包括具有不同蚀刻速率的子层，这是由于组分的原子比例不同或由于不同的蚀刻剂。 或者局部蚀刻速率可以随着沉积条件的改变而连续变化。 蚀刻速率的差异或蚀刻剂混合物的差异可用于获得期望的仰角。

    Systems configured to reduce distortion of a resist during a metrology process and systems and methods for reducing alteration of a specimen during analysis
    7.
    发明授权
    Systems configured to reduce distortion of a resist during a metrology process and systems and methods for reducing alteration of a specimen during analysis 有权
    被配置为在测量过程中减少抗蚀剂变形的系统以及用于减少分析期间样品变化的系统和方法

    公开(公告)号：US07304302B1

    公开(公告)日：2007-12-04

    申请号：US11215745

    申请日：2005-08-29

    申请人： Peter Nunan ,  Muhran Nasser-Ghodsi ,  Mark Borowicz ,  Rudy F. Garcia ,  Tzu Chin Chuang ,  Herschel Marchman ,  David Soltz

    发明人： Peter Nunan ,  Muhran Nasser-Ghodsi ,  Mark Borowicz ,  Rudy F. Garcia ,  Tzu Chin Chuang ,  Herschel Marchman ,  David Soltz

    IPC分类号： H01J37/21

    CPC分类号： H01J37/28 ,  H01J37/20 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/2065 ,  H01J2237/2067 ,  H01J2237/2817

    摘要： Various systems configured to reduce distortion of a resist during a metrology process are provided. The systems include an electron beam metrology tool configured to measure one or more characteristics of one or more resist features formed on a specimen. The electron beam metrology tool may be configured as a scanning electron microscope. The resist may be designed for exposure at a wavelength of about 193 nm. One system includes a cooling subsystem configured to alter a temperature of the specimen during measurements by the tool such that the resist feature(s) are not substantially distorted during the measurements. Another system includes a drying subsystem that is configured to reduce moisture proximate the specimen during measurements by the electron beam metrology tool such that the resist feature(s) are not substantially distorted during the measurements. An additional system may include both the cooling subsystem and the drying subsystem.

    摘要翻译： 提供了在计量过程中减少抗蚀剂失真的各种系统。 该系统包括电子束计量工具，其被配置为测量形成在样本上的一个或多个抗蚀剂特征的一个或多个特性。 电子束计量工具可以被配置为扫描电子显微镜。 抗蚀剂可以设计用于在约193nm的波长下曝光。 一个系统包括一个冷却子系统，该冷却子系统被配置成在由该工具进行的测量期间改变样品的温度，使得抗蚀剂特征在测量期间基本上不失真。 另一种系统包括干燥子系统，该干燥子系统被配置为通过电子束计量工具在测量期间减少靠近样本的水分，使得抗蚀剂特征在测量期间基本上不失真。 另外的系统可以包括冷却子系统和干燥子系统。

    THREE-DIMENSIONAL IMAGING USING ELECTRON BEAM ACTIVATED CHEMICAL ETCH
    8.
    发明申请
    THREE-DIMENSIONAL IMAGING USING ELECTRON BEAM ACTIVATED CHEMICAL ETCH 失效
    使用电子束激活化学蚀刻的三维成像

    公开(公告)号：US20070158562A1

    公开(公告)日：2007-07-12

    申请号：US11622758

    申请日：2007-01-12

    申请人： MEHRAN NASSER-GHODSI ,  Tzu-Chin Chuang ,  Kenneth Krzeczowski ,  Matthew Lent ,  Chris Huang ,  Stanislaw Borowicz

    发明人： MEHRAN NASSER-GHODSI ,  Tzu-Chin Chuang ,  Kenneth Krzeczowski ,  Matthew Lent ,  Chris Huang ,  Stanislaw Borowicz

    IPC分类号： G21K7/00

    CPC分类号： H01J37/28 ,  H01J2237/226 ,  H01J2237/2611 ,  H01J2237/3174

    摘要： Methods and apparatus for imaging a structure and a related processor-readable medium are disclosed. A surface of a substrate (or a portion thereof) is exposed to a gas composition. The gas composition includes one or more components that etch the substrate upon activation by interaction with a beam of electrons. A beam of electrons is directed to one or more portions of the surface of the substrate that are exposed to the gas composition to etch the one or more portions. A plurality of images is obtained of the one or more portions at different instances of time as the one or more portions are etched. A three-dimensional model of one or more structures embedded within the one or more portions of the substrate is generated from the plurality of images.

    摘要翻译： 公开了用于对结构进行成像和相关处理器可读介质的方法和装置。 将基材（或其一部分）的表面暴露于气体组合物。 气体组合物包括一种或多种在通过与电子束的相互作用激活时蚀刻衬底的组分。 电子束被引导到暴露于气体组合物的衬底的表面的一个或多个部分以蚀刻一个或多个部分。 当蚀刻一个或多个部分时，在不同的时间点获得一个或多个部分的多个图像。 从多个图像生成嵌入在基板的一个或多个部分内的一个或多个结构的三维模型。

    Thin-film structure with conductive molybdenum-chromium line
    10.
    发明授权
    Thin-film structure with conductive molybdenum-chromium line 失效
    导电钼铬线薄膜结构

    公开(公告)号：US5693983A

    公开(公告)日：1997-12-02

    申请号：US235008

    申请日：1994-04-28

    申请人： Jackson H. Ho ,  Robert R. Allen, deceased ,  Tzu-Chin Chuang

    发明人： Jackson H. Ho ,  Robert R. Allen, deceased ,  Tzu-Chin Chuang

    IPC分类号： G02F1/136 ,  G02F1/1362 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L29/786

    CPC分类号： H01L23/53257 ,  G02F2001/136295 ,  H01L2924/0002 ,  H01L2924/3011

    摘要： A conductive line in a thin-film structure such as an AMLCD array includes molybdenum and chromium so that it can be processed in a manner similar to chromium but has a greater conductivity than chromium due to the molybdenum. The conductive line can be produced by physical vapor deposition of a layer of a molybdenum-chromium (MoCr) alloy, which can then be masked and etched using photolithographic techniques in a manner similar to chromium. Proportions between 15 and 85 atomic percent of molybdenum can be processed more easily than pure molybdenum and are more conductive than pure chromium. Lines with between 40 and 60 atomic percent molybdenum can be used with a margin of error. To produce a tapered conductive line, sublayers of MoCr alloys with different etch rates can be produced and etched.

    摘要翻译： 诸如AMLCD阵列的薄膜结构中的导线包括钼和铬，使得其可以以与铬类似的方式进行加工，但由于钼而具有比铬更高的导电性。 导电线可以通过钼 - 铬（MoCr）合金层的物理气相沉积来制造，然后可以以类似于铬的方式使用光刻技术进行掩模和蚀刻。 比例比纯钼更容易处理15到85原子％的钼的比例，比纯铬更加导电。 具有40至60原子％钼的线可以使用误差。 为了生产锥形导电线，可以生产和蚀刻具有不同蚀刻速率的MoCr合金的子层。