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US5518805A Hillock-free multilayer metal lines for high performance thin film structures 失效
用于高性能薄膜结构的无丘陵多层金属线

Hillock-free multilayer metal lines for high performance thin film
structures
摘要:
The present invention is a novel multilayered structure comprising alternating layers of a base metal and a metal selected from a group of barrier metals. The base metal, in any given layer, is deposited to a thickness less than its critical thickness--a thickness beyond which hillocks are more likely to form for a given temperature. Between each such layer of base metal, a layer of barrier metal is interposed. The intervening layer of barrier metal acts to suppress the formation of hillocks in the base metal.
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