发明授权
US5518805A Hillock-free multilayer metal lines for high performance thin film
structures
失效
用于高性能薄膜结构的无丘陵多层金属线
- 专利标题: Hillock-free multilayer metal lines for high performance thin film structures
- 专利标题(中): 用于高性能薄膜结构的无丘陵多层金属线
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申请号: US234897申请日: 1994-04-28
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公开(公告)号: US5518805A公开(公告)日: 1996-05-21
- 发明人: Jackson H. Ho , Ronald T. Fulks , Tzu-Chin Chuang
- 申请人: Jackson H. Ho , Ronald T. Fulks , Tzu-Chin Chuang
- 申请人地址: CT Stamford
- 专利权人: Xerox Corporation
- 当前专利权人: Xerox Corporation
- 当前专利权人地址: CT Stamford
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L21/3205 ; H01L23/532 ; B32B7/02 ; B32B15/01
摘要:
The present invention is a novel multilayered structure comprising alternating layers of a base metal and a metal selected from a group of barrier metals. The base metal, in any given layer, is deposited to a thickness less than its critical thickness--a thickness beyond which hillocks are more likely to form for a given temperature. Between each such layer of base metal, a layer of barrier metal is interposed. The intervening layer of barrier metal acts to suppress the formation of hillocks in the base metal.
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