Systems configured to reduce distortion of a resist during a metrology process and systems and methods for reducing alteration of a specimen during analysis
    1.
    发明授权
    Systems configured to reduce distortion of a resist during a metrology process and systems and methods for reducing alteration of a specimen during analysis 有权
    被配置为在测量过程中减少抗蚀剂变形的系统以及用于减少分析期间样品变化的系统和方法

    公开(公告)号:US07304302B1

    公开(公告)日:2007-12-04

    申请号:US11215745

    申请日:2005-08-29

    IPC分类号: H01J37/21

    摘要: Various systems configured to reduce distortion of a resist during a metrology process are provided. The systems include an electron beam metrology tool configured to measure one or more characteristics of one or more resist features formed on a specimen. The electron beam metrology tool may be configured as a scanning electron microscope. The resist may be designed for exposure at a wavelength of about 193 nm. One system includes a cooling subsystem configured to alter a temperature of the specimen during measurements by the tool such that the resist feature(s) are not substantially distorted during the measurements. Another system includes a drying subsystem that is configured to reduce moisture proximate the specimen during measurements by the electron beam metrology tool such that the resist feature(s) are not substantially distorted during the measurements. An additional system may include both the cooling subsystem and the drying subsystem.

    摘要翻译: 提供了在计量过程中减少抗蚀剂失真的各种系统。 该系统包括电子束计量工具,其被配置为测量形成在样本上的一个或多个抗蚀剂特征的一个或多个特性。 电子束计量工具可以被配置为扫描电子显微镜。 抗蚀剂可以设计用于在约193nm的波长下曝光。 一个系统包括一个冷却子系统,该冷却子系统被配置成在由该工具进行的测量期间改变样品的温度,使得抗蚀剂特征在测量期间基本上不失真。 另一种系统包括干燥子系统,该干燥子系统被配置为通过电子束计量工具在测量期间减少靠近样本的水分,使得抗蚀剂特征在测量期间基本上不失真。 另外的系统可以包括冷却子系统和干燥子系统。