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公开(公告)号：CN102484080B
公开(公告)日：2015-07-22
申请号：CN201080023252.6
申请日：2010-06-17
Applicant: 罗姆股份有限公司
IPC: H01L21/60 , H01L21/3205 , H01L23/29 , H01L23/31 , H01L23/52
CPC classification number: H01L24/85 , B23K20/005 , B23K20/10 , B23K20/24 , H01L21/56 , H01L23/3107 , H01L23/49503 , H01L23/49513 , H01L23/4952 , H01L23/49548 , H01L23/49582 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/83 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48451 , H01L2224/48453 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/48507 , H01L2224/48624 , H01L2224/48639 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48824 , H01L2224/48839 , H01L2224/48847 , H01L2224/49171 , H01L2224/73265 , H01L2224/78301 , H01L2224/78303 , H01L2224/78307 , H01L2224/78309 , H01L2224/83 , H01L2224/8314 , H01L2224/83192 , H01L2224/83439 , H01L2224/838 , H01L2224/85 , H01L2224/85045 , H01L2224/85051 , H01L2224/85181 , H01L2224/85186 , H01L2224/85205 , H01L2224/85439 , H01L2224/8592 , H01L2224/85986 , H01L2224/92 , H01L2224/92247 , H01L2224/97 , H01L2924/00012 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01066 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/013 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/05442 , H01L2924/0665 , H01L2924/10162 , H01L2924/10253 , H01L2924/12042 , H01L2924/15747 , H01L2924/181 , H01L2924/18301 , H01L2924/19107 , H01L2924/20752 , H01L2924/20757 , H01L2924/3512 , H01L2924/01026 , H01L2924/00 , H01L2924/2076 , H01L2924/207 , H01L2924/20753 , H01L2924/20756 , H01L2924/20758 , H01L2924/00015
Abstract: 本发明是提供一种半导体装置。该半导体装置包括：半导体芯片；电极焊盘，其由含铝的金属材料构成，且形成在所述半导体芯片的表面；电极引脚，其配置在所述半导体芯片的周围；焊线，其具有线状延伸的主体部、和形成在所述主体部的两端且与所述电极焊盘以及所述电极引脚分别接合的焊盘接合部以及引脚接合部；和树脂封装，其对所述半导体芯片、所述电极引脚以及所述焊线进行密封，所述焊线由铜构成，所述电极焊盘整体以及所述焊盘接合部整体被非透水膜呈一体地覆盖。
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公开(公告)号：CN101243546B
公开(公告)日：2011-07-06
申请号：CN200680030503.7
申请日：2006-08-18
Applicant: 罗姆股份有限公司
IPC: H01L21/52
CPC classification number: H01L24/29 , H01L23/49811 , H01L23/49866 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/29 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/2919 , H01L2224/29298 , H01L2224/32225 , H01L2224/32507 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83444 , H01L2224/83801 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/01028 , H01L2924/00012 , H01L2924/01049 , H01L2924/01083 , H01L2924/3512 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/45099 , H01L2224/05599
Abstract: 本发明提供一种能够充分提高半导体芯片与基板之间的接合强度，且可确实防止由于热冲击或温度循环等造成断裂的发生的半导体装置。半导体装置具备半导体芯片、和具有该半导体芯片经由金属层接合的接合区域的基板。金属层具有Au-Sn-Ni合金层、和重叠于Au-Sn-Ni合金层的焊料层。Au-Sn-Ni合金层和焊料层的界面形成有凹凸。
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公开(公告)号：CN101872748A
公开(公告)日：2010-10-27
申请号：CN201010170101.5
申请日：2010-04-21
Applicant: 罗姆股份有限公司
IPC: H01L23/10 , H01L23/42 , H01L23/495
CPC classification number: H01L23/49513 , H01L23/3107 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/2919 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83439 , H01L2224/83801 , H01L2224/92 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2924/013 , H01L2224/05599
Abstract: 本发明涉及半导体装置以及半导体装置的制造方法，半导体装置包含：半导体芯片；与上述半导体芯片接合的固体板；以及介于上述半导体芯片与上述固体板之间、并由BiSn系材料构成的接合件，其中，上述接合件具有用于提高上述半导体芯片与上述固体板之间的热传导性的由Ag构成的热传导通路。
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公开(公告)号：CN101160657A
公开(公告)日：2008-04-09
申请号：CN200680012102.9
申请日：2006-04-12
Applicant: 罗姆股份有限公司
CPC classification number: H01L24/97 , H01L2224/05554 , H01L2224/48091 , H01L2224/48227 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: 在本发明的半导体制造方法中，首先，在原基板的一个面，在跨规定切断线的区域形成一侧金属层。另外，在原基板的另一面，在与一侧金属层对置的位置形成另一侧金属层。接着，在跨切断线的位置，形成连续贯通另一侧金属层及原基板的连续贯通孔。然后，在另一侧金属层的表面、连续贯通孔的内面及内部端子的面对连续贯通孔面对的部分，覆盖金属镀层。之后，在将原基板分割成单个支承基板之前，将切断线上的另一侧金属层及该另一侧金属层上的金属镀层除去。
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