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公开(公告)号：CN101194360A
公开(公告)日：2008-06-04
申请号：CN200680020122.0
申请日：2006-06-02
Applicant: 罗姆股份有限公司
IPC: H01L23/12
CPC classification number: H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/15311 , H01L2924/00014 , H01L2924/00
Abstract: 提供一种可以防止绝缘性基板发生热翘曲的接插件和具备该接插件的半导体装置。接插件，与半导体芯片一起，向半导体装置所具备的该半导体装置的安装基板进行安装时，介于上述半导体芯片和上述安装基板之间。该接插件包括：由绝缘性树脂构成的绝缘性基板；岛，其形成在绝缘性基板的一个面上，通过粘接剂与半导体芯片的背面接合；放热焊盘，其在与绝缘性基板的一个面相反侧的另一面上，在相对于岛隔着绝缘性基板几乎对置的位置形成；放热通孔，其贯通绝缘性基板的一个面和另一个面之间而形成，将岛和放热焊盘可导热地连接。
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公开(公告)号：CN101872748B
公开(公告)日：2015-10-07
申请号：CN201010170101.5
申请日：2010-04-21
Applicant: 罗姆股份有限公司
IPC: H01L23/10 , H01L23/42 , H01L23/495
CPC classification number: H01L23/49513 , H01L23/3107 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/2919 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83439 , H01L2224/83801 , H01L2224/92 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2924/013 , H01L2224/05599
Abstract: 本发明涉及半导体装置以及半导体装置的制造方法，半导体装置包含：半导体芯片；与上述半导体芯片接合的固体板；以及介于上述半导体芯片与上述固体板之间、并由BiSn系材料构成的接合件，其中，上述接合件具有用于提高上述半导体芯片与上述固体板之间的热传导性的由Ag构成的热传导通路。
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公开(公告)号：CN101164162A
公开(公告)日：2008-04-16
申请号：CN200680013260.6
申请日：2006-06-01
Applicant: 罗姆股份有限公司
CPC classification number: H01L24/32 , H01L2224/293 , H01L2224/29499 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83143 , H01L2924/01079 , H01L2924/014 , H01L2924/15311 , H01L2924/00 , H01L2924/00014
Abstract: 本发明的半导体装置，包含半导体芯片和芯片接合部(该芯片接合部具有通过焊锡粘接剂与半导体芯片的背面接合的接合面)。所述接合面的面积，小于所述半导体芯片的背面的面积。所述半导体装置最好包含多个延伸部，这些延伸部分别从所述接合面的周边，向着与所述接合面平行的方向延伸。即使为了将半导体芯片的背面与岛及片凸垫等芯片接合部的接合面接合而使用焊锡粘接剂时，也能够防止半导体芯片受到损伤。
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公开(公告)号：CN101159254A
公开(公告)日：2008-04-09
申请号：CN200710161374.1
申请日：2007-09-28
Applicant: 罗姆股份有限公司
IPC: H01L23/488 , H01L23/498 , H01L23/367
CPC classification number: H01L23/3677 , H01L23/49816 , H01L24/45 , H01L24/48 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: 本发明的半导体装置具备：形成在树脂制基板的一面上的岛部；配置在上述基板的另一面上的外部端子；形成在上述基板的上述另一面上并与上述岛部对置配置的导热垫；贯通上述基板的上述一面与上述另一面之间而形成、可传热地连接上述岛部与上述导热垫的传热部；和形成在上述基板的上述另一面上，并具有散热用开口部和端子用开口部的阻焊层，其中，上述散热用开口部按照在与上述导热垫的外周之间形成有间隙的方式开口，上述端子用开口部按照使上述外部端子露出的方式开口。
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Patent Agency Ranking
公开(公告)号：CN105006462B
公开(公告)日：2019-03-01
申请号：CN201510378917.X
申请日：2010-06-17
Applicant: 罗姆股份有限公司
IPC: H01L23/488 , H01L21/60
Abstract: 本发明提供一种半导体装置。该半导体装置包括：层问绝缘膜，其形成在半导体基板上；最上层布线，其由铜构成且形成在所述层间绝缘膜上；钝化膜，其形成在所述最上层布线上，且具有使所述最上层布线的表面作为电极焊盘而选择性露出的焊盘开口；和焊线，其由铜构成，且直接接合于所述电极焊盘。
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公开(公告)号：CN105006462A
公开(公告)日：2015-10-28
申请号：CN201510378917.X
申请日：2010-06-17
Applicant: 罗姆股份有限公司
IPC: H01L23/488 , H01L21/60
CPC classification number: H01L24/85 , B23K20/005 , B23K20/10 , B23K20/24 , H01L21/56 , H01L23/3107 , H01L23/49503 , H01L23/49513 , H01L23/4952 , H01L23/49548 , H01L23/49582 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/83 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48451 , H01L2224/48453 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/48507 , H01L2224/48624 , H01L2224/48639 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48824 , H01L2224/48839 , H01L2224/48847 , H01L2224/49171 , H01L2224/73265 , H01L2224/78301 , H01L2224/78303 , H01L2224/78307 , H01L2224/78309 , H01L2224/83 , H01L2224/8314 , H01L2224/83192 , H01L2224/83439 , H01L2224/838 , H01L2224/85 , H01L2224/85045 , H01L2224/85051 , H01L2224/85181 , H01L2224/85186 , H01L2224/85205 , H01L2224/85439 , H01L2224/8592 , H01L2224/85986 , H01L2224/92 , H01L2224/92247 , H01L2224/97 , H01L2924/00012 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01066 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/013 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/05442 , H01L2924/0665 , H01L2924/10162 , H01L2924/10253 , H01L2924/12042 , H01L2924/15747 , H01L2924/181 , H01L2924/18301 , H01L2924/19107 , H01L2924/20752 , H01L2924/20757 , H01L2924/3512 , H01L2924/01026 , H01L2924/00 , H01L2924/2076 , H01L2924/207 , H01L2924/20753 , H01L2924/20756 , H01L2924/20758 , H01L2924/00015
Abstract: 本发明提供一种半导体装置。该半导体装置包括：层问绝缘膜，其形成在半导体基板上；最上层布线，其由铜构成且形成在所述层间绝缘膜上；钝化膜，其形成在所述最上层布线上，且具有使所述最上层布线的表面作为电极焊盘而选择性露出的焊盘开口；和焊线，其由铜构成，且直接接合于所述电极焊盘。
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公开(公告)号：CN102484080B
公开(公告)日：2015-07-22
申请号：CN201080023252.6
申请日：2010-06-17
Applicant: 罗姆股份有限公司
IPC: H01L21/60 , H01L21/3205 , H01L23/29 , H01L23/31 , H01L23/52
CPC classification number: H01L24/85 , B23K20/005 , B23K20/10 , B23K20/24 , H01L21/56 , H01L23/3107 , H01L23/49503 , H01L23/49513 , H01L23/4952 , H01L23/49548 , H01L23/49582 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/83 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48451 , H01L2224/48453 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/48507 , H01L2224/48624 , H01L2224/48639 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48824 , H01L2224/48839 , H01L2224/48847 , H01L2224/49171 , H01L2224/73265 , H01L2224/78301 , H01L2224/78303 , H01L2224/78307 , H01L2224/78309 , H01L2224/83 , H01L2224/8314 , H01L2224/83192 , H01L2224/83439 , H01L2224/838 , H01L2224/85 , H01L2224/85045 , H01L2224/85051 , H01L2224/85181 , H01L2224/85186 , H01L2224/85205 , H01L2224/85439 , H01L2224/8592 , H01L2224/85986 , H01L2224/92 , H01L2224/92247 , H01L2224/97 , H01L2924/00012 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01066 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/013 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/05442 , H01L2924/0665 , H01L2924/10162 , H01L2924/10253 , H01L2924/12042 , H01L2924/15747 , H01L2924/181 , H01L2924/18301 , H01L2924/19107 , H01L2924/20752 , H01L2924/20757 , H01L2924/3512 , H01L2924/01026 , H01L2924/00 , H01L2924/2076 , H01L2924/207 , H01L2924/20753 , H01L2924/20756 , H01L2924/20758 , H01L2924/00015
Abstract: 本发明是提供一种半导体装置。该半导体装置包括：半导体芯片；电极焊盘，其由含铝的金属材料构成，且形成在所述半导体芯片的表面；电极引脚，其配置在所述半导体芯片的周围；焊线，其具有线状延伸的主体部、和形成在所述主体部的两端且与所述电极焊盘以及所述电极引脚分别接合的焊盘接合部以及引脚接合部；和树脂封装，其对所述半导体芯片、所述电极引脚以及所述焊线进行密封，所述焊线由铜构成，所述电极焊盘整体以及所述焊盘接合部整体被非透水膜呈一体地覆盖。
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公开(公告)号：CN101243546B
公开(公告)日：2011-07-06
申请号：CN200680030503.7
申请日：2006-08-18
Applicant: 罗姆股份有限公司
IPC: H01L21/52
CPC classification number: H01L24/29 , H01L23/49811 , H01L23/49866 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/29 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/2919 , H01L2224/29298 , H01L2224/32225 , H01L2224/32507 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83444 , H01L2224/83801 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/01028 , H01L2924/00012 , H01L2924/01049 , H01L2924/01083 , H01L2924/3512 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/45099 , H01L2224/05599
Abstract: 本发明提供一种能够充分提高半导体芯片与基板之间的接合强度，且可确实防止由于热冲击或温度循环等造成断裂的发生的半导体装置。半导体装置具备半导体芯片、和具有该半导体芯片经由金属层接合的接合区域的基板。金属层具有Au-Sn-Ni合金层、和重叠于Au-Sn-Ni合金层的焊料层。Au-Sn-Ni合金层和焊料层的界面形成有凹凸。
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公开(公告)号：CN101872748A
公开(公告)日：2010-10-27
申请号：CN201010170101.5
申请日：2010-04-21
Applicant: 罗姆股份有限公司
IPC: H01L23/10 , H01L23/42 , H01L23/495
CPC classification number: H01L23/49513 , H01L23/3107 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/2919 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83439 , H01L2224/83801 , H01L2224/92 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2924/013 , H01L2224/05599
Abstract: 本发明涉及半导体装置以及半导体装置的制造方法，半导体装置包含：半导体芯片；与上述半导体芯片接合的固体板；以及介于上述半导体芯片与上述固体板之间、并由BiSn系材料构成的接合件，其中，上述接合件具有用于提高上述半导体芯片与上述固体板之间的热传导性的由Ag构成的热传导通路。
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