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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12218204B2

    公开(公告)日：2025-02-04

    申请号：US16768401

    申请日：2018-11-30

    Applicant: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.

    Inventor： Ha Jong Bong ,  Jae Gu Lim

    IPC: H01L29/205 ,  H01L29/20 ,  H01L29/207 ,  H01L33/32 ,  H01S5/30 ,  H01S5/323

    Abstract: Disclosed in an embodiment is a semiconductor device comprising a semiconductor structure, which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein: the first conductive semiconductor layer comprises a first super lattice layer comprising a plurality of first sub layers and a plurality of second sub layers, the first and second sub layers being alternately arranged; the semiconductor structure emits ions of indium, aluminum, and a first and second dopant during a primary ion irradiation; the intensity of indium ions emitted from the active layer includes a maximum indium intensity peak; the doping concentration of the first dopant emitted from the first conductive semiconductor layer includes a maximum concentration peak; the maximum indium intensity peak is disposed to be spaced from the maximum concentration peak in a first direction; the intensity of indium ions emitted from the plurality of first sub layers has a plurality of first indium intensity peaks; the doping concentration of the first dopant emitted from the plurality of first sub layers has a plurality of first concentration peaks; and the plurality of first indium intensity peaks and the plurality of first concentration peaks are disposed between the maximum indium intensity peak and the maximum concentration peak.

    Control of current spread in semiconductor laser devices
    2.
    发明授权
    Control of current spread in semiconductor laser devices 有权

    公开(公告)号：US12095232B2

    公开(公告)日：2024-09-17

    申请号：US17495227

    申请日：2021-10-06

    Applicant: II-VI Delaware, Inc.

    Inventor： Evgeny Zibik ,  Wilfried Maineult

    IPC: H01S5/22 ,  H01S5/10 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323

    CPC classification number: H01S5/2054 ,  H01S5/1039 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/323

    Abstract: A semiconductor laser is formed to include a current blocking layer that is positioned below the active region of the device and used to minimize current spreading beyond the defined dimensions of an output beam's optical mode. When used in conjunction with other current-confining structures typically disposed above the active region (e.g., ridge waveguide, electrical isolation, oxide aperture), the inclusion of the lower current blocking layer improves the efficiency of the device. The current blocking layer may be used in edge-emitting devices or vertical cavity surface-emitting devices, and also functions to improve mode shaping and reduction of facet deterioration by directing current flow away from the facets.

    Semiconductor laser diode
    3.
    发明授权
    Semiconductor laser diode 有权

    公开(公告)号：US12062887B2

    公开(公告)日：2024-08-13

    申请号：US18322661

    申请日：2023-05-24

    Applicant: OSRAM OLED GmbH

    Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

    IPC: H01S5/22 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

    CPC classification number: H01S5/22 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/3211 ,  H01S5/32341 ,  H01S2301/16

    Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

    Semiconductor laser device
    8.
    发明授权
    Semiconductor laser device 有权

    公开(公告)号：US11967802B2

    公开(公告)日：2024-04-23

    申请号：US16603803

    申请日：2017-09-14

    Applicant: Mitsubishi Electric Corporation

    Inventor： Kimio Shigihara

    IPC: H01S5/32 ,  H01S5/065 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323

    CPC classification number: H01S5/3211 ,  H01S5/0653 ,  H01S5/2036 ,  H01S5/222 ,  H01S5/32316 ,  H01S2304/04

    Abstract: A semiconductor laser device is provided with a semiconductor layer including an active layer and a plurality of cladding layers sandwiching the active layer. The active layer includes a stripe-shaped active region, a pair of first refractive index regions and a pair of second refractive index regions sandwiching the active layer and the pair of first refractive index regions. When λ is the laser oscillation wavelength, na is the effective refractive index of the active region, nc is the effective refractive index of the first refractive index regions, nt is the effective refractive index of the second refractive index regions, w is the width of the active region, and m is a positive integer, the semiconductor laser device satisfies na>nt>nc, and the conditions of equations (5), (8) and (9).

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