公开(公告)号：US11837851B2

公开(公告)日：2023-12-05

申请号：US17931933

申请日：2022-09-14

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Yusheng Bian ,  Roderick A. Augur ,  Michal Rakowski ,  Kenneth J. Giewont ,  Karen A. Nummy

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/30 ,  H01S5/223 ,  H01S5/026 ,  H01S5/323 ,  H01S5/02

CPC分类号： H01S5/2018 ,  H01S5/20 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3013 ,  H01S5/021 ,  H01S5/026 ,  H01S5/3054 ,  H01S5/32333

摘要： A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

公开(公告)号：US07899283B2

公开(公告)日：2011-03-01

申请号：US12868163

申请日：2010-08-25

申请人： Manabu Matsuda ,  Tsuyoshi Yamamoto

发明人： Manabu Matsuda ,  Tsuyoshi Yamamoto

IPC分类号： G02B6/34

CPC分类号： H01S5/1228 ,  B82Y20/00 ,  H01S5/0654 ,  H01S5/1215 ,  H01S5/124 ,  H01S5/2209 ,  H01S5/2275 ,  H01S5/32333 ,  H01S5/3403 ,  H01S5/3434

摘要： An optical device including: an optical waveguide; and a plurality of diffraction grating layers provided along the optical waveguide, wherein each of the diffraction grating layers comprises a diffraction grating, each diffraction grating comprising a discontinuous first semiconductor layer and a second semiconductor layer burying the first semiconductor layer, the first and second semiconductor layers having different refractive indices, the plurality of diffraction grating layers comprise at least two diffraction grating layers being different from each other in terms of the length of a region where the diffraction grating is provided, and the diffraction gratings in an overlap region of the plurality of diffraction grating layers have the same phase and period is provided.

摘要翻译： 一种光学装置，包括：光波导; 以及沿着光波导设置的多个衍射光栅层，其中每个衍射光栅层包括衍射光栅，每个衍射光栅包括不连续的第一半导体层和埋入第一半导体层的第二半导体层，第一和第二半导体 具有不同折射率的层，多个衍射光栅层包括至少两个衍射光栅层相对于设置有衍射光栅的区域的长度而彼此不同，并且多个衍射光栅层的重叠区域中的衍射光栅 的衍射光栅层具有相同的相位和周期。

公开(公告)号：US06643306B2

公开(公告)日：2003-11-04

申请号：US09984798

申请日：2001-10-31

申请人： Toshiaki Fukunaga

发明人： Toshiaki Fukunaga

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/32333 ,  H01S5/3403 ,  H01S5/3406

摘要： In a semiconductor laser device having a substrate and an active region, the active region includes an active layer between tensile strain optical waveguide layers. The active layer includes at least one compressive strain quantum well sublayer. When the active layer includes more than one compressive strain quantum well sublayer, the active layer further includes at least one barrier sublayer being formed between the more than one quantum well sublayer and having an identical amount of tensile strain to that of the optical waveguide layers. The absolute value of a sum of a product of the strain and the total thickness of the at least one quantum well sublayer and a product of the strain and the total thickness of the optical waveguide layers and the at least one barrier sublayer (if any) is equal to or smaller than 0.05 nm.

公开(公告)号：US06127691A

公开(公告)日：2000-10-03

申请号：US199815

申请日：1998-11-25

申请人： Toshiaki Fukunaga ,  Mitsugu Wada

发明人： Toshiaki Fukunaga ,  Mitsugu Wada

IPC分类号： H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC分类号： B82Y20/00 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/2009 ,  H01S5/32333 ,  H01S5/3403

摘要： A semiconductor laser device comprises a GaAs substrate, a first cladding layer having either one of p-type electrical conductivity and n-type electrical conductivity, a first optical waveguide layer, an In.sub.x2 Ga.sub.1-x2 As.sub.1-y2 P.sub.y2 first barrier layer, an In.sub.x3 Ga.sub.1-x3 As.sub.1-y3 P.sub.y3 quantum well active layer, an In.sub.x2 Ga.sub.1-x2 As.sub.1-y2 P.sub.y2 second barrier layer, a second optical waveguide layer, and a second cladding layer having the other electrical conductivity, the layers being overlaid in this order on the substrate. Each cladding layer and each optical waveguide layer have compositions, which are lattice matched with the substrate. Each of the first and second barrier layers has a tensile strain with respect to the substrate and is set such that a total layer thickness of the barrier layers may be 10 nm to 30 nm, and a product of a strain quantity of the tensile strain and the total layer thickness may be 0.05 nm to 0.2 nm. The active layer has a composition, which is lattice matched with the substrate, or a composition, which has a tensile strain of at most 0.003 with respect to the substrate.

摘要翻译： 半导体激光器件包括GaAs衬底，具有p型导电性和n型导电性中的任一种的第一覆盖层，第一光波导层，Inx2Ga1-x2As1-y2Py2第一阻挡层，Inx3Ga1-x3As1- y3Py3量子阱有源层，Inx2Ga1-x2As1-y2Py2第二阻挡层，第二光波导层和具有另一导电性的第二覆层，这些层依次叠置在基板上。 每个包覆层和每个光波导层具有与衬底晶格匹配的组成。 第一和第二阻挡层中的每一个相对于基板具有拉伸应变，并且被设置为使得阻挡层的总层厚度可以为10nm至30nm，并且拉伸应变的应变量和 总层厚度可以为0.05nm至0.2nm。 活性层具有与基材晶格匹配的组成或相对于基材具有至多0.003的拉伸应变的组合物。

公开(公告)号：US5926493A

公开(公告)日：1999-07-20

申请号：US859416

申请日：1997-05-20

申请人： Stephen O'Brien ,  Hanmin Zhao ,  Jo S. Major, Jr.

发明人： Stephen O'Brien ,  Hanmin Zhao ,  Jo S. Major, Jr.

IPC分类号： G02B6/12 ,  G02B6/124 ,  H01S5/12 ,  H01S5/125 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  G02B6/34

CPC分类号： B82Y20/00 ,  G02B6/124 ,  H01S5/12 ,  G02B2006/12107 ,  H01S5/125 ,  H01S5/3211 ,  H01S5/32333 ,  H01S5/3408 ,  H01S5/34313 ,  H01S5/3432

摘要： Optical semiconductor devices with integrated diffraction gratings with higher quality are realized through the use of Al-free grating layers. AlGaAs/GaAs regime optical semiconductor devices, such as laser diodes or optical filters, conventionally utilize an AlGaAs grating layer that has a strong affinity for oxidation. Instead of a Al-containing layer, a quantenary, InGaAsP grating layer is utilized, lattice matched to the underlying AlGaAs/GaAs structure, substantially eliminating any problem of oxide contamination. Also, an Al-free, ternary InGaP grating layer is utilized in the InGaP/InGaAsP/GaAs material regime. The quantum well active region of these devices may also be modified to extend the gain bandwidth of operation of these devices to insure continued operation over a wider temperature range with the wavelength peak of the grating in that the wavelength peak of the grating more assuredly remains within the wavelength operating range of the device.

摘要翻译： 具有高质量集成衍射光栅的光学半导体器件通过使用无Al栅格层实现。 诸如激光二极管或滤光器的AlGaAs / GaAs态光学半导体器件通常利用对氧化具有强亲和力的AlGaAs光栅层。 代替含Al层，使用量子化的InGaAsP栅格层，与下面的AlGaAs / GaAs结构晶格匹配，基本上消除了氧化物污染的任何问题。 而且，在InGaP / InGaAsP / GaAs材料体系中使用了不含Al的三元InGaP光栅层。 这些器件的量子阱有源区也可以被修改，以扩大这些器件的工作的增益带宽，以确保在光栅的波长峰值的更宽的温度范围内继续工作，因为光栅的波长峰值更可靠地保持在 设备的波长工作范围。

公开(公告)号：US5852625A

公开(公告)日：1998-12-22

申请号：US621748

申请日：1996-03-22

申请人： Koji Takahashi

发明人： Koji Takahashi

IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/323 ,  H01S3/08 ,  H01S3/19

CPC分类号： H01S5/1228 ,  H01S5/32316 ,  H01S5/32333

摘要： The gain coupled distributed feedback semiconductor laser includes an active layer and a diffraction grating which is provided in the vicinity of the active layer and has a plurality of light absorption layer periodically arranged along a resonator length direction. A relationship among energy h.nu. (h is Planck's constant, and .nu. is a frequency of induced emission light), forbidden band width E.sub.g of the light absorption layer, and energy band width .delta.E where free electrons are thermally distributed satisfies h.nu..gtoreq.E.sub.g +.delta.E.

摘要翻译： 增益耦合分布反馈半导体激光器包括有源层和衍射光栅，该衍射光栅设置在有源层附近并具有沿着谐振器长度方向周期性排列的多个光吸收层。 能量h nu（h是普朗克常数，nu是感应发射光的频率），光吸收层的禁带宽度Eg和热分布自由电子的能带宽度ΔE之间的关系满足hnu> = Eg + delta E.

公开(公告)号：US5789273A

公开(公告)日：1998-08-04

申请号：US619085

申请日：1996-03-21

申请人： Tadashi Yamamoto

发明人： Tadashi Yamamoto

IPC分类号： C30B29/40 ,  H01L21/205 ,  H01L33/12 ,  H01L33/30 ,  H01S5/00 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01S5/32325 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0062 ,  H01S2304/04 ,  H01S5/32333 ,  Y10S148/041 ,  Y10S148/11

摘要： After a compound semiconductor layer including InP is formed on a semiconductor substrate, a compound semiconductor layer including As is epitaxially grown by metal organic chemical vapor deposition method using an organic As as the material for feeding the As.

摘要翻译： 在半导体衬底上形成包括InP的化合物半导体层之后，通过使用有机As作为供给As的材料的金属有机化学气相沉积法外延生长包含As的化合物半导体层。

公开(公告)号：US5617437A

公开(公告)日：1997-04-01

申请号：US561465

申请日：1995-11-21

申请人： Toshiaki Fukunaga

发明人： Toshiaki Fukunaga

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34326 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/32333 ,  H01S5/3409

摘要： A semiconductor laser comprises an active layer, optical waveguide layers formed on opposite sides of the active layer, and cladding layers. The active layer is constituted of an InGaAsP type of compound semiconductor. Each of the optical waveguide layers is constituted of an InGaAsP type of quarternary compound semiconductor, in which the content of As in the Group-V elements is at least 2%, or an InGaAlAsP type of five-element compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%. Each of the cladding layers is constituted of an InGaAsP type of quarternary compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%, or an InGaAlAsP type of five-element compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%.

摘要翻译： 半导体激光器包括有源层，形成在有源层的相对侧上的光波导层和包覆层。 有源层由InGaAsP型化合物半导体构成。 每个光波导层由In-GaAsP类型的V族元素中的As含量至少为2％的InGaAsP型或五元素化合物半导体的InGaAlAsP型构成，其中含量 的V族元素的含量在2％〜10％的范围内。 每个包覆层由In-GaAsP型四元化合物半导体构成，其中V族元素中的As含量在2％至10％的范围内，或者是InGaAlAsP型的五元素化合物半导体， 其中V族元素中的As含量在2％至10％的范围内。

公开(公告)号：US09570885B2

公开(公告)日：2017-02-14

申请号：US14308335

申请日：2014-06-18

申请人： Huawei Technologies Co., Ltd.

发明人： Xiaoping Zhou

IPC分类号： H04B10/572 ,  H04B10/50 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/0625 ,  H04B10/556 ,  H01S5/12 ,  H01S5/323

CPC分类号： H01S5/06251 ,  H01S5/06256 ,  H01S5/12 ,  H01S5/22 ,  H01S5/32333 ,  H04B10/503 ,  H04B10/5563 ,  H04B10/572

摘要： The present invention provide a laser, where the laser is divided into a laser region and a grating adjustment region through a first electrical isolation layer; the laser region is configured to generate optical signals, where the optical signals include an optical signal with a wavelength corresponding to a “0” signal and an optical signal with a wavelength corresponding to a “1” signal; the grating adjustment region is configured to adjust a wavelength of the grating adjustment region by controlling current of the grating adjustment region, so that the optical signal with the wavelength corresponding to the “1” signal of the laser region passes through the grating adjustment region, and the optical signal with the wavelength corresponding to the “0” signal of the laser region returns to the laser region, thereby implementing suppression to chirp of a directly modulated laser.

摘要翻译： 本发明提供一种激光器，其中通过第一电隔离层将激光器分成激光区域和光栅调节区域; 激光区域被配置为产生光信号，其中光信号包括具有对应于“0”信号的波长的光信号和具有对应于“1”信号的波长的光信号; 光栅调整区域通过控制光栅调整区域的电流来调整光栅调整区域的波长，使得与激光区域的“1”信号对应的波长的光信号通过光栅调整区域， 并且具有对应于激光区域的“0”信号的波长的光信号返回到激光区域，从而实现对直接调制激光器的啁啾的抑制。

公开(公告)号：US08948606B2

公开(公告)日：2015-02-03

申请号：US13219953

申请日：2011-08-29

申请人： Shinsuke Tanaka ,  Tsuyoshi Yamamoto

发明人： Shinsuke Tanaka ,  Tsuyoshi Yamamoto

IPC分类号： H04B10/00 ,  H01S5/50 ,  B82Y20/00 ,  H01S5/10 ,  H04B10/12 ,  H01S5/00 ,  H01S5/022 ,  H01S5/0625 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01S5/50 ,  B82Y20/00 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/0064 ,  H01S5/02288 ,  H01S5/0625 ,  H01S5/1039 ,  H01S5/1057 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/2224 ,  H01S5/32333 ,  H01S5/3235 ,  H01S5/34306 ,  H01L2924/00

摘要： A semiconductor optical amplifier includes an n-type semiconductor layer, a p-type semiconductor layer an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer, the active layer transmitting an optical signal and a current-injection part that injects current into the active layer via the n-type semiconductor layer and the p-type semiconductor layer, the active layer including a first active layer that includes AlGaInAs, and a second active layer that includes GaInAsP, the second active layer provided closer to an output side than the first active layer, and the first active layer and the second active layer being butt-jointed.

摘要翻译： 半导体光放大器包括n型半导体层，p型半导体层，设置在n型半导体层和p型半导体层之间的有源层，有源层透射光信号和电流注入部分 其中，所述有源层通过所述n型半导体层和所述p型半导体层注入到所述有源层中，所述有源层包括包含AlGaInAs的第一有源层和包括GaInAsP的第二有源层，所述第二有源层靠近 比第一有源层的输出侧，第一有源层和第二有源层被对接。