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公开(公告)号：US20250043458A1
公开(公告)日：2025-02-06
申请号：US18716232
申请日：2022-12-07
Inventor： Yongfei HAN , Xin WANG , Pengtao LIU
Abstract: A crystal growth method comprises: in a process of growing a crystal by using a pulling method, controlling an induction coil to move downwards with respect a crucible, wherein the induction coil moves with an acceleration after the crystal enters an equal-diameter stage, and the moving speed of the induction coil tends to continuously increase during the entire moving process of the induction coil. According to the crystal growth method, a change in a temperature gradient of a crystal growth interface caused by the internal temperature distribution of the crucible can be compensated, a continuous and stable temperature field environment is provided for crystal growth, and defects generated during a crystal growth process are reduced.
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2.发明授权公开(公告)号：US12195871B2
公开(公告)日：2025-01-14
申请号：US18046314
申请日：2022-10-13
Applicant: GlobalWafers Co., Ltd.
Inventor： Chieh Hu , Hsien-Ta Tseng , Chun-Sheng Wu , William Lynn Luter , Liang-Chin Chen , Sumeet Bhagavat , Carissima Marie Hudson , Yu-Chiao Wu
Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.
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公开(公告)号：US20240401237A1
公开(公告)日：2024-12-05
申请号：US18609883
申请日：2024-03-19
Applicant: University of Science and Technology Beijing
Inventor： Yongfeng Liang , Fuqiang Zhang , Junpin Lin , Leming Xu , Gang Yang , Xianfei Ding
Abstract: Disclosed is a method for preparing a directionally solidified TiAl alloy, including: (1) melting and casting a master alloy to obtain a TiAl alloy ingot; (2) processing the TiAl alloy ingot into a sample rod, and placing the sample rod into a refractory metal crucible and then assembling the refractory metal crucible to a directional solidification furnace; (3) vacuumizing the directional solidification furnace, and heating the directional solidification furnace to gradually raise a temperature to exceed a melting point of the sample rod, and conducting heat preservation to melt the sample rod uniformly to obtain a molten TiAl alloy; and (4) directionally pulling the molten TiAl alloy after the heat preservation to allow directional growth to a growth length, stopping the directionally pulling, and taking out an obtained sample to obtain a test rod of the directionally solidified TiAl.
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公开(公告)号：US20240401227A1
公开(公告)日：2024-12-05
申请号：US18326342
申请日：2023-05-31
Applicant: Siemens Medical Solutions USA, Inc.
Inventor： Peter Cohen , Troy Marlar , Mark Andreaco
Abstract: A furnace and a method of growing a high temperature oxide crystal in the furnace. The furnace includes a crucible having a melt therein and a heating element for generating heat in the melt. A thermal element within the furnace produces a thermal gradient within the melt to draw a cold spot of a convection cell of the melt away from a seed location of the crucible. A seed crystal is drawn from the melt at the seed location to form a boule to grow the high temperature oxide crystal.
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公开(公告)号：US20240392467A1
公开(公告)日：2024-11-28
申请号：US18323775
申请日：2023-05-25
Applicant: GlobalWafers Co., Ltd.
Inventor： Chun-Sheng Wu , Hong-Huei Huang , Hsien-Ta Tseng , Chen-Yi Lin , Feng-Chien Tsai , Yu-Chiao Wu , Benjamin Michael Meyer , Young Gil Jeong , Che-Min Chang , Carissima Marie Hudson
Abstract: Ingot puller apparatus for producing a doped single crystal silicon ingot are disclosed. The ingot puller apparatus includes a dopant feeder having a first dopant receptacle for holding a first batch of dopant and a second dopant receptacle for holding a second batch of dopant. A rotation mechanism rotates the first dopant receptacle to release the first batch of dopant into the crucible and rotates the second dopant receptacle to release the second batch of dopant into the crucible.
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Patent Agency Ranking
公开(公告)号：US20240344233A1
公开(公告)日：2024-10-17
申请号：US18294698
申请日：2022-07-27
Applicant: LONGI GREEN ENERGY TECHNOLOGY CO., LTD.
Inventor： Hong YAO , Chaoguang ZHANG , Weikang REN , Lei CHENG , Qiao LI , Lu CHENG , Hao DENG , Linghang ZHAO , Bin DUAN , Lulu DU , Wei HAN
Abstract: Provided are a crucible combination and a thermal field assembly. The crucible combination includes a susceptor holder; a susceptor body disposed on the susceptor holder, the susceptor body comprises a crucible installation cavity that gradually increases from the susceptor holder in a direction departing from the susceptor holder; and a crucible disposed in the crucible installation cavity, an outer surface of the crucible is an outer surface that gradually increases from the susceptor holder in the direction departing from the susceptor holder, the outer surface and an inner surface of the crucible installation cavity are arranged oppositely, and a softening temperature of the susceptor body is greater than the softening temperature of the crucible.
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7.发明授权公开(公告)号：US12091770B1
公开(公告)日：2024-09-17
申请号：US18326374
申请日：2023-05-31
Applicant: Siemens Medical Solutions USA, Inc.
Inventor： Mark Andreaco , Peter Cohen
CPC classification number: C30B15/206 , C30B15/10 , C30B15/14 , C30B29/16
Abstract: Disclosed herein is a furnace and a method of growing a high temperature oxide crystal. The furnace includes a cylindrical furnace wall, an induction coil disposed within the cylindrical furnace wall, a quartz tube disposed within the induction coil, a refractory lining disposed within the quartz tube, and a crucible disposed within the refractory lining, the crucible including a melt therein. A lid placed on the crucible. An asymmetric configuration of at least one of the crucible, the refractory lining, the quartz tube, the induction coil and the lid within the cylindrical furnace wall creates a thermal gradient that causes a cold spot in the melt to migrate from a first location to a second location of the melt. A rod having a seed crystal at an end thereof is lowered into the crucible to draw a boule from the melt via the seed crystal from the first location.
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公开(公告)号：US20240279841A1
公开(公告)日：2024-08-22
申请号：US18567705
申请日：2022-09-30
Applicant: XI’AN ESWIN MATERIAL TECHNOLOGY CO., LTD.
Inventor： Wenwu YANG
Abstract: A heater that may be included in a single crystal growing apparatus includes a heating body. The heating body has a bowl shape and has a bottom having an opening. The heating body is divided into a first heating zone and a second heating zone in the circumferential direction. The first heating zone includes a first main heating area and the second heating zone includes a second main heating area. The first main heating area and the second main heating area are located at different position with different heights in the axial direction of the heating body.
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9.发明授权公开(公告)号：US12018400B2
公开(公告)日：2024-06-25
申请号：US17651127
申请日：2022-02-15
Applicant: GlobalWafers Co., Ltd.
Inventor： Zheng Lu , Chi-Yung Chen , Hsien-Ta Tseng , Sumeet S. Bhagavat , Vahid Khalajzadeh
Abstract: A system for producing a silicon ingot, the system includes a crystal puller, a pyrometer, an infrared (IR) camera, and a controller. The crystal puller includes a hot zone having one or more components therein, and in which a silicon ingot may be pulled. The pyrometer is positioned to view a region of interest within the hot zone. The IR camera is positioned to view one or more additional regions of interest within the hot zone. The controller is connected to the crystal puller, the pyrometer, and the IR camera. The controller is programmed to control the crystal puller to produce a silicon ingot, receive temperature data of the region of interest within the hot zone from the pyrometer while producing the silicon ingot, and receive IR images of the one or more additional regions of interest from the IR camera while producing the silicon ingot.
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公开(公告)号：US12000060B2
公开(公告)日：2024-06-04
申请号：US17606694
申请日：2020-01-16
Applicant: ZING SEMICONDUCTOR CORPORATION
Inventor： Weimin Shen , Gang Wang , Hanyi Huang , Yun Liu
Abstract: A semiconductor crystal growth method and device are provided. The method comprises: obtaining an initial position of a graphite crucible when used in a semiconductor crystal growth process for the first time; obtaining a current production batch of the graphite crucible which characterizes a number of times of growth processes performed by the graphite crucible so far; and loading polysilicon raw materials into a quartz crucible sleeved in the graphite crucible based on the current production batch, wherein a total weight of the materials is called a charging amount, and the charging amount is adjusted based on the current production batch to keep an initial position of a silicon melt liquid surface in the quartz crucible stable while keeping the initial position of the graphite crucible unchanged. The present invention ensures the stability of each parameter in the crystal pulling process, and enhances the crystal pulling speed and quality.
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