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公开(公告)号：US20240218564A1
公开(公告)日：2024-07-04
申请号：US18537785
申请日：2023-12-12
Applicant: Zing Semiconductor Corporation , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Inventor： Xing WEI , Wenkai LIU , Zhongying XUE , Yun LIU , Rongwang DAI , Minghao LI , Yuehui YU
CPC classification number: C30B30/04 , C30B15/20 , C30B29/06 , H01F6/06 , H01L27/1203
Abstract: The present invention provides a crystal growing method, an apparatus and a RF-SOI substrate for growing a crystal. The crystal growing method may comprise: controlling a first superconducting coil to generate a first current, and controlling a second superconducting coil to generate a second current, wherein a value of the first current is not equal to a value of the second current, the first superconducting coil and the second superconducting coil are superconducting coils positioned oppositely outside a crucible to generate a magnetic field in the crucible; and pulling upwards to grow a monocrystalline in an asymmetric magnetic field generated by the first current and the second current in the crucible.
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公开(公告)号：US12000060B2
公开(公告)日：2024-06-04
申请号：US17606694
申请日：2020-01-16
Applicant: ZING SEMICONDUCTOR CORPORATION
Inventor： Weimin Shen , Gang Wang , Hanyi Huang , Yun Liu
Abstract: A semiconductor crystal growth method and device are provided. The method comprises: obtaining an initial position of a graphite crucible when used in a semiconductor crystal growth process for the first time; obtaining a current production batch of the graphite crucible which characterizes a number of times of growth processes performed by the graphite crucible so far; and loading polysilicon raw materials into a quartz crucible sleeved in the graphite crucible based on the current production batch, wherein a total weight of the materials is called a charging amount, and the charging amount is adjusted based on the current production batch to keep an initial position of a silicon melt liquid surface in the quartz crucible stable while keeping the initial position of the graphite crucible unchanged. The present invention ensures the stability of each parameter in the crystal pulling process, and enhances the crystal pulling speed and quality.
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公开(公告)号：US20230137599A1
公开(公告)日：2023-05-04
申请号：US17586046
申请日：2022-01-27
Applicant: Zing Semiconductor Corporation , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Inventor： Xing WEI , Rongwang DAI , Ziwen WANG , Minghao LI , Hongtao XU , Meng CHEN
IPC: H01L21/324 , C30B29/06 , H01L29/06
Abstract: The present application provides a method of surface treatment of a SOI wafer comprising: providing a SOI wafer comprising a substrate, atop silicon layer and an insulating buried layer, wherein the insulating buried layer is located between the back substrate and the top silicon layer, and the top silicon layer has a surface roughness of larger than 10 Å; removing a native oxide layer from a surface of the top silicon layer by conducting a first isothermal annealing process at a first target temperature, wherein the first isothermal annealing process is under atmosphere of a mixture of argon and hydrogen; and planarizing the surface of the top silicon layer by conducting a second isothermal annealing process at a second target temperature, wherein the second target temperature is higher than the first target temperature, and the second isothermal annealing process is under atmosphere of argon. The present method can optimize the atmosphere for batch annealing to achieve better planarization than the conventional technologies. Specifically, the obtained top silicon layer of the SOI wafer has a surface roughness of less than 4 Å.
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公开(公告)号：US20230133916A1
公开(公告)日：2023-05-04
申请号：US17586254
申请日：2022-01-27
Applicant: Zing Semiconductor Corporation , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Inventor： Xing WEI , Rongwang DAI , Ziwen WANG , Minghao LI , Meng CHEN , Hongtao XU
IPC: H01L21/762
Abstract: The present application provides a process of surface treatment of a silicon-on-insulator (SOI) wafer comprising: providing a SOI wafer comprising a back substrate, a top silicon layer and an insulating buried layer, wherein the insulating buried layer is located between the back substrate and the top silicon layer, and the top silicon layer has a surface roughness of larger than 10 Å; conducting a first planarization to a surface of the top silicon layer by conducting a batch annealing process at a first target temperature, and conducting a second planarization to a surface of the top silicon layer by conducting a rapid thermal annealing process at a second target temperature. The present application combines the batch annealing process and the rapid thermal annealing process to optimize the SOI wafer, especially the surface roughness of the SOI wafer. The SOI wafer planarized by the two thermal annealing processes has a good surface roughness of the top silicon layer which satisfies process requirements.
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公开(公告)号：US20230133092A1
公开(公告)日：2023-05-04
申请号：US17586324
申请日：2022-01-27
Applicant: Zing Semiconductor Corporation , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Inventor： Xing WEI , Rongwang DAI , Ziwen WANG , Minghao LI , Meng CHEN , Hongtao XU
IPC: H01L21/324 , H01L21/762
Abstract: A SOI structured semiconductor silicon wafer and a method of making the same is disclosed, comprising: loading a semiconductor silicon wafer in a first batch vertical furnace, and conducting a long-time thermal treatment; conducting a sacrificial oxidation process in a second batch vertical furnace after the long-time thermal treatment; conducting a rapid thermal annealing treatment after the second step ; wherein during the long-time thermal treatment, the semiconductor silicon wafer is kept in a protection atmosphere of pure , heated-up until meet a target temperature after changing the atmosphere of pure argon into a mixture gas of 1-n % Ar and n % H2, and then annealed in the atmosphere of a mixture of 1-n % Ar and n % hydrogen gas or pure Ar, and n is a value no greater than 10.
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Patent Agency Ranking
公开(公告)号：US11427925B2
公开(公告)日：2022-08-30
申请号：US16952564
申请日：2020-11-19
Applicant: Zing Semiconductor Corporation
Inventor： Xuliang Zhao
Abstract: The present application provides an apparatus and a method for ingot growth. The apparatus for ingot growth comprises a growth furnace, a crucible, a heater, a lifting mechanism, an infrared detector, a dividing disc, a sensor and a control device. The crucible is located within the growth furnace. The lifting mechanism comprises a lifting wire and a driving device, wherein the lifting wire connects to the top of the ingot via one terminal and to the driving device via another terminal. The bottom of the ingot puts inside the crucible, and the ingot has plural crystal lines thereon. The infrared detector is located outside the growth furnace. The dividing disc is above the growth furnace, connects to the lifting mechanism, and rotates with the ingot synchronously under the driving of the lifting mechanism, and an orthographic projection of bisector of the dividing disc is between two adjacent crystal lines. The sensor is located on the periphery of the dividing disc. The control device connects to the infrared detector and the sensor in order to control the infrared detector to detect the ingot diameter while the sensor senses the bisector of the dividing disc. The present application is able to increase ingot quality and enhance product yield.
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公开(公告)号：US20220181200A1
公开(公告)日：2022-06-09
申请号：US17191683
申请日：2021-03-03
Applicant: Zing Semiconductor Corporation , SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
Inventor： Xing WEI , Nan GAO , Zhongying XUE
IPC: H01L21/762
Abstract: The present invention provides a method of making a silicon on insulator (SOI) structure, comprising steps of: providing a bonded structure, the bonded structure comprises a first substrate, a second substrate and an insulating buried layer, the insulating buried layer is positioned between the first substrate and the second substrate; peeling off a layer of removing region of the first substrate from the bonded structure to obtain a SOI structure; and processing the SOI structure with isothermal annealing technology at a pressure which is lower than atmospheric pressure.
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公开(公告)号：US20220002903A1
公开(公告)日：2022-01-06
申请号：US17139990
申请日：2020-12-31
Applicant: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Zing Semiconductor Corporation
Inventor： Zhongying Xue , Minghao Li , Xing Wei , Zhan Li , Tao Wei , Yun Liu
Abstract: Disclosed a heat shield device for a single crystal production furnace. The heat shield device is disposed above a melt crucible of the single crystal production furnace, and comprises a shell, supporting members, heat insulation plates and a direction control component. The supporting members and the heat insulation plates are disposed within of the shell. One end of the supporting member is fixedly connected with an inner wall of the shell. The direction control component is connected with the heat insulation plate. The supporting members serve as supporting points of the heat insulation plates, and cooperate with the direction control component to control rotation of the heat insulation plates relative to the shell. A rotatable angle of the heat insulation plate faces a cylindrical surface of monocrystalline silicon, and a bottom surface of the shell faces interior of the melt crucible.
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公开(公告)号：US20210071314A1
公开(公告)日：2021-03-11
申请号：US17016446
申请日：2020-09-10
Applicant: ZING SEMICONDUCTOR CORPORATION
Inventor： Weimin Shen , Gang Wang
Abstract: The present invention provides a crystal growth apparatus, including: a crucible configured to contain a melt for crystal growth; a heater disposed around the crucible and configured to heat the crucible; a heater deflector configured to surrounded the top and sides of the heater; an air vent, located on the heater deflector above the heater to let the air flow between the top space of the crystal growth apparatus and the surrounding space of the heater. According to the crystal growth device provided by the present invention, the air vent is provided on the heater deflector above the heater to connect the top space of the crystal growth device and the surrounding space of the heater, so that the heater is always in the atmosphere of the protective gas, the erosion of the heater surface by SiO vapor is avoided, the service life of the heater is extended, and the stability of the crystal growth quality is improved.
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公开(公告)号：US20210010155A1
公开(公告)日：2021-01-14
申请号：US16904563
申请日：2020-06-18
Applicant: Zing Semiconductor Corporation
Inventor： Weimin Shen , Gang Wang , Xianliang Deng , Hanyi Huang , Wee Teck Tan
Abstract: The present invention provides a semiconductor crystal growth apparatus, which comprises a furnace body, a crucible, a pulling device, a deflector, and a magnetic field applying device. The crucible is disposed inside the furnace body for containing silicon melt. The pulling device is disposed on the top of the furnace body for pulling a silicon ingot from the silicon melt. The deflector is in a barrel shape and is disposed in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot in a vertical direction and through the deflector. The magnetic field applying device is configured to apply a magnetic field to the silicon melt in the crucible, in which the distance between the bottom of the deflector and the liquid level of the silicon melt in the direction of the magnetic field is less than that between the bottom of the deflector and the silicon melt in the direction perpendicular to the direction of the magnetic field.
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