公开(公告)号：US20250043458A1

公开(公告)日：2025-02-06

申请号：US18716232

申请日：2022-12-07

Applicant: BEIJING HAMAMATSU PHOTON TECHNIQUES INC. ,  HAMAMATSU PHOTONICS K.K.

Inventor： Yongfei HAN ,  Xin WANG ,  Pengtao LIU

IPC: C30B15/20 ,  C30B15/14 ,  C30B29/34 ,  C30B33/00 ,  G01T1/20 ,  G01T1/202

Abstract: A crystal growth method comprises: in a process of growing a crystal by using a pulling method, controlling an induction coil to move downwards with respect a crucible, wherein the induction coil moves with an acceleration after the crystal enters an equal-diameter stage, and the moving speed of the induction coil tends to continuously increase during the entire moving process of the induction coil. According to the crystal growth method, a change in a temperature gradient of a crystal growth interface caused by the internal temperature distribution of the crucible can be compensated, a continuous and stable temperature field environment is provided for crystal growth, and defects generated during a crystal growth process are reduced.