公开(公告)号：US20240344233A1

公开(公告)日：2024-10-17

申请号：US18294698

申请日：2022-07-27

Applicant: LONGI GREEN ENERGY TECHNOLOGY CO., LTD.

Inventor： Hong YAO ,  Chaoguang ZHANG ,  Weikang REN ,  Lei CHENG ,  Qiao LI ,  Lu CHENG ,  Hao DENG ,  Linghang ZHAO ,  Bin DUAN ,  Lulu DU ,  Wei HAN

IPC: C30B15/14 ,  C30B15/10 ,  C30B29/06

CPC classification number: C30B15/14 ,  C30B15/10 ,  C30B29/06

Abstract: Provided are a crucible combination and a thermal field assembly. The crucible combination includes a susceptor holder; a susceptor body disposed on the susceptor holder, the susceptor body comprises a crucible installation cavity that gradually increases from the susceptor holder in a direction departing from the susceptor holder; and a crucible disposed in the crucible installation cavity, an outer surface of the crucible is an outer surface that gradually increases from the susceptor holder in the direction departing from the susceptor holder, the outer surface and an inner surface of the crucible installation cavity are arranged oppositely, and a softening temperature of the susceptor body is greater than the softening temperature of the crucible.

公开(公告)号：US20240287703A1

公开(公告)日：2024-08-29

申请号：US18578456

申请日：2022-07-12

Applicant: LONGI GREEN ENERGY TECHNOLOGY CO., LTD.

Inventor： Yonggang ZHU ,  Rui ZHOU ,  Qiao LI ,  Lin DONG ,  Qunli ZHAO ,  Jie CAO ,  Shaoqiang SHI ,  Xiaokang MA

IPC: C30B15/02 ,  C30B29/06

CPC classification number: C30B15/02 ,  C30B29/06

Abstract: A monocrystal furnace with lateral feeding includes: a furnace body, a feeding apparatus, and a thermal insulation layer, a sealing member, a crucible and a lifting apparatus that are provided within the furnace body. The thermal insulation layer is located between the crucible and the furnace body, a first through-hole is provided on a side portion of the furnace body, and a second through-hole is provided in a position of the thermal insulation layer opposite to the first through-hole; the lifting apparatus is connected to the sealing member and is used to drive the sealing member to switch between a rising state and a falling state; in the rising state, the sealing member rises, and the feeding apparatus is capable of passing through the first through-hole and the second through-hole to be opposite to an opening of the crucible.

公开(公告)号：US20220389610A1

公开(公告)日：2022-12-08

申请号：US17740259

申请日：2022-05-09

Applicant: LONGI GREEN ENERGY TECHNOLOGY CO., LTD.

Inventor： Zhengyuan WANG ,  Qiao LI ,  Feifei DOU

IPC: C30B15/22

Abstract: A method for growing a single crystal by using a Czochralski technique includes: in a cone process of a single-crystal growth by using the Czochralski technique, acquiring a first parameter corresponding to the single-crystal growth, and inputting the first parameter into a target model, because the target model is constructed by using a second parameter corresponding to the single-crystal growth in a historical cone process and a historical cone growing diameter in a historical cone growing operation, a cone growing diameter outputted by the target model according to the first parameter may be acquired, and then a cone growing operation is performed according to the first parameter and the cone growing diameter. At this point, the target model sufficiently learns from the experience of the historical cone process and the cone growing process.

公开(公告)号：US20240060209A1

公开(公告)日：2024-02-22

申请号：US18267479

申请日：2021-12-16

Applicant: LONGI GREEN ENERGY TECHNOLOGY CO., LTD.

Inventor： Zhanjun XU ,  Rui ZHOU ,  Qiao LI

IPC: C30B15/26 ,  C30B15/16 ,  C30B29/06

CPC classification number: C30B15/26 ,  C30B15/16 ,  C30B29/06

Abstract: A crystal-growth controlling method and device, and a crystal growing apparatus, used for, in the process of growing a crystal by a pulling method, forming the crystal of the shape required by the cell side. The method includes: in a process of growing a crystal by the pulling method, acquiring a growth image of the crystal in real time, and extracting shape information of the crystal at a growth interface from the growth image, wherein the growth interface is where the crystal intersects with a raw-material melt liquid level; comparing the shape information of the crystal at the growth interface with shape information of the predetermined shape, to obtain a comparison result; and based on the comparison result, adjusting a shape of the crystal at the growth interface by using a laser.

公开(公告)号：US20210262115A1

公开(公告)日：2021-08-26

申请号：US17256327

申请日：2019-11-11

Applicant: LONGI GREEN ENERGY TECHNOLOGY CO., LTD.

Inventor： Zhengyuan WANG ,  Qiao LI ,  Zhanjun XU

IPC: C30B15/22 ,  C30B29/06 ,  G06F17/18

Abstract: A method and device for controlling constant-diameter growth of monocrystalline silicon and a storage medium, relating to the technical field of crystal fabrication, which can automatically adjust the controlling level of the crystal constant-diameter growth, to in turn control the crystal diameter better. The particular technical solution includes: acquiring PID initial values of an i-th cycle period; correcting the PID initial values of the i-th cycle period, and obtaining PID corrected values of the i-th cycle period; and according to the PID corrected values of the i-th cycle period, controlling a crystal growth diameter of the i-th cycle period. The present application is used to control constant-diameter growth of monocrystalline silicon.