公开(公告)号：US20220389610A1

公开(公告)日：2022-12-08

申请号：US17740259

申请日：2022-05-09

Applicant: LONGI GREEN ENERGY TECHNOLOGY CO., LTD.

Inventor： Zhengyuan WANG ,  Qiao LI ,  Feifei DOU

IPC: C30B15/22

Abstract: A method for growing a single crystal by using a Czochralski technique includes: in a cone process of a single-crystal growth by using the Czochralski technique, acquiring a first parameter corresponding to the single-crystal growth, and inputting the first parameter into a target model, because the target model is constructed by using a second parameter corresponding to the single-crystal growth in a historical cone process and a historical cone growing diameter in a historical cone growing operation, a cone growing diameter outputted by the target model according to the first parameter may be acquired, and then a cone growing operation is performed according to the first parameter and the cone growing diameter. At this point, the target model sufficiently learns from the experience of the historical cone process and the cone growing process.