Fluxless die-to-heat spreader bonding using thermal interface material
    1.
    发明授权
    Fluxless die-to-heat spreader bonding using thermal interface material 失效
    使用热界面材料的无焊模具散热器粘合

    公开(公告)号:US06833289B2

    公开(公告)日:2004-12-21

    申请号:US10436677

    申请日:2003-05-12

    申请人: Chuan Hu Daoqiang Lu

    发明人: Chuan Hu Daoqiang Lu

    IPC分类号: H01L2150

    摘要: A thinned semiconductor die is coupled to an integrated heat spreader with thermal interface material to form a semiconductor package. The method for forming the package comprises forming a metallization layer on a backside of a thinned semiconductor die. A thermal interface portion, including a solder layer including a fluxlessly-capable solder such as AuSn, is formed on the topside of the integrated heat spreader. The metallization layer and the solder layer are then forced together under load and heat without flux to bond the semiconductor die to the integrated heat spreader.

    摘要翻译: 减薄的半导体管芯与具有热界面材料的集成散热器耦合以形成半导体封装。 用于形成封装的方法包括在薄化的半导体管芯的背面上形成金属化层。 在集成散热器的顶侧上形成有包括无助焊剂如AuSn的焊料层的热界面部分。 然后将金属化层和焊料层在负载和热力下一起被压在一起,而没有焊剂将半导体管芯结合到集成散热器。

    Relaxed tolerance flip chip assembly
    2.
    发明授权
    Relaxed tolerance flip chip assembly 有权
    宽松公差倒装芯片组装

    公开(公告)号:US06821816B1

    公开(公告)日:2004-11-23

    申请号:US10461577

    申请日:2003-06-13

    申请人: Daniel A. Lawlyes

    发明人: Daniel A. Lawlyes

    IPC分类号: H01L2150

    摘要: A method and assembly (10) for conducting heat from a semiconductor device, such as a power flip chip (12). The assembly (10) is generally constructed to dissipate heat from the flip chip (12) when mounted to a flexible or rigid substrate (20). Heat is conducted from the flip chip (12) through upper and lower pedestals (26, 28) each of which includes a pliable pre-cured silicone adhesive pad (32, 36). The pre-cured silicon adhesive pads (32, 36) promote thermal contact while also decoupling any lateral mechanical strains that may arise as a result of different thermal expansion and movement between the flip chips (12). The housing portions (16, 18) form a housing (14) when assembled, with each housing portion (16, 18) including a configured edge (37, 41) that controls the travel of the pedestals (26, 28) toward each other, to thereby limit the pressure exerted on the flip chip (12) disposed therebetween. Silicone adhesive can be applied between the edges (37, 41) to hold the housing portions (16, 18) together.

    摘要翻译: 一种用于从诸如功率倒装芯片(12)的半导体器件传导热量的方法和组件(10)。 组件(10)通常构造成当安装到柔性或刚性基底(20)时从倒装芯片(12)散发热量。 通过上下基座(26,28)从倒装芯片(12)传导热量,每个基座包括柔韧的预固化硅氧烷粘合垫(32,36)。 预固化的硅粘合剂垫(32,36)促进热接触,同时还使由于倒装芯片(12)之间的不同热膨胀和移动而可能出现的任何横向机械应变解耦。 当组装时,壳体部分(16,18)形成壳体(14),每个壳体部分(16,18)包括控制基座(26,28)朝向彼此的移动的构造边缘(37,41) ,从而限制施加在设置在其间的倒装芯片(12)的压力。 可以在边缘(37,41)之间施加硅胶粘合剂以将壳体部分(16,18)保持在一起。

    Stacked semiconductor device manufacturing method
    4.
    发明授权
    Stacked semiconductor device manufacturing method 失效
    叠层半导体器件制造方法

    公开(公告)号:US06686222B2

    公开(公告)日:2004-02-03

    申请号:US10147070

    申请日:2002-05-17

    IPC分类号: H01L2150

    摘要: In a semiconductor device manufacturing method, a semiconductor element is mounted on a substrate including first connection electrodes, first interconnections electrically connected to the first connection electrodes and a first alignment mark with the semiconductor element electrically connected to the first interconnections. Then, the substrate having the semiconductor element mounted thereon and a core substrate including second connection electrodes and second interconnections electrically connected to the second connection electrode and having adhesive layers formed on both surfaces thereof are positioned with respect to and stacked on each other based on recognition of the first alignment mark, thermo-compression bonding is performed at temperatures at which an adhesive agent of the adhesive layers is melted, without being cured, to temporarily fix the substrate having the semiconductor element mounted thereon on the core substrate by tackiness of the adhesive agent.

    摘要翻译: 在半导体器件制造方法中,半导体元件安装在包括第一连接电极的基板上,与第一连接电极电连接的第一互连和与第一互连电连接的半导体元件的第一对准标记。 然后,在其上安装有半导体元件的基板和包括第二连接电极的芯基板和与第二连接电极电连接并且在其两个表面上形成的粘合剂层的第二互连基于识别而相对于彼此定位 在第一对准标记的温度下,在粘合剂层的粘合剂被熔化而不固化的温度下进行热压接,通过粘合剂的粘性将其上安装有半导体元件的基板临时固定在芯基板上 代理商