Abstract:
According to one embodiment, a method is disclosed for manufacturing a semiconductor device including a semiconductor chip having electrode pads formed on a first major surface and a bonding layer provided on a second major surface, and a substrate having the semiconductor chip mounted on the substrate. The manufacturing method can include applying a fillet-forming material to a portion contacting an outer edge of the second major surface of the semiconductor chip on a front face of the substrate. The method can include bonding the second major surface of the semiconductor chip to the substrate via the bonding layer.
Abstract:
A part of a ceiling wall (14) of a head cover (10) that opposes an intake collection chamber (51) is constituted by a concave ceiling wall (20) that defines a concave surface facing the intake collection chamber (51), and the concave ceiling wall (20) is formed with a recessed groove (21) that further recedes toward an inner side of the head cover.
Abstract:
In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include, upon attaching a bonding material containing a resin and a solvent to a second surface opposed to a first surface including a circuit pattern of a wafer, heating the bonding material to evaporate the solvent and decreasing vapor pressure of the solvent in an atmosphere faced with the bonding material and heating the attached bonding material to form a bonding layer.
Abstract:
A height of an upper end of an oil outflow prevention wall 25 with respect to the fastening plane 15 is greater in a lower side of the inclination of the fastening plane 15 than in a higher side of the inclination of the fastening plane 15.
Abstract:
A stacked semiconductor device includes a first semiconductor element bonded on a circuit base. The first semiconductor element is electrically connected to a connection part of the circuit base via a first bonding wire. A second semiconductor element is bonded on the first semiconductor element via a second adhesive layer with a thickness of 50 μm or more. The second adhesive layer is formed of an insulating resin layer whose glass transition temperature is 135° C. or higher and whose coefficient of linear expansion at a temperature equal to or lower than the glass transition temperature is 100 ppm or less.
Abstract:
A method of manufacturing a stacked-type semiconductor device, comprises: arranging a plurality of stacked chips obtained by stacking semiconductor chips on a plurality of stages on a support substrate; connecting a semiconductor chip of each stage in each stacked chip and the support substrate by wire while performing heating in units of stacked chips; performing plastic molding of each stacked chip; and separating the stacked chips from each other.An apparatus for manufacturing a stacked-type semiconductor device, comprising divided heater blocks formed under a support substrate on which a plurality of stacked chips obtained by stacking a plurality of semiconductor chips are arranged, the divided heater blocks being formed with respect to the stacked chips, and a heating device to selectively transmit heat to a stacked chip subjected to a wire bonding.
Abstract:
A part of a ceiling wall (14) of a head cover (10) that opposes an intake collection chamber (51) is constituted by a concave ceiling wall (20) that defines a concave surface facing the intake collection chamber (51), and the concave ceiling wall (20) is formed with a recessed groove (21) that further recedes toward an inner side of the head cover.
Abstract:
A stacked electronic component comprises a first electronic component adhered on a substrate via a first adhesive layer, and a second electronic component adhered by using a second adhesive layer thereon. The second adhesive layer has a two-layer structure formed by a same material and having different modulus of elasticity. The second adhesive layer of the two-layer structure has a first layer disposed at the first electronic component side and a second layer disposed at the second electronic component side. The first layer softens or melts at an adhesive temperature. The second layer maintains a layered shape at the adhesive temperature. According to the stacked electronic component, occurrences of an insulation failure and a short circuiting are prevented, and in addition, a peeling failure between the electronic components, an increase of a manufacturing cost, and so on, can be suppressed.
Abstract:
A stacked electronic component comprises a first electronic component adhered on a substrate via a first adhesive layer, and a second electronic component adhered by using a second adhesive layer thereon. The second adhesive layer has a two-layer structure formed by a same material and having different modulus of elasticity. The second adhesive layer of the two-layer structure has a first layer disposed at the first electronic component side and a second layer disposed at the second electronic component side. The first layer softens or melts at an adhesive temperature. The second layer maintains a layered shape at the adhesive temperature. According to the stacked electronic component, occurrences of an insulation failure and a short circuiting are prevented, and in addition, a peeling failure between the electronic components, an increase of a manufacturing cost, and so on, can be suppressed.
Abstract:
A semiconductor package includes a lead frame having an element mounting part and a lead part. A first semiconductor element and a second semiconductor element are sequentially stacked on a principal surface at least on one side of the element mounting part. An insulating resin layer serving as a second adhesive layer is filled between the first semiconductor element and the second semiconductor element. An element-side end portion of a first bonding wire connected to the first semiconductor element is buried in the insulating resin layer.