Method and apparatus for manufacturing stacked-type semiconductor device
    6.
    发明申请
    Method and apparatus for manufacturing stacked-type semiconductor device 审中-公开
    叠层型半导体器件的制造方法和装置

    公开(公告)号:US20110079629A1

    公开(公告)日:2011-04-07

    申请号:US12926774

    申请日:2010-12-08

    Abstract: A method of manufacturing a stacked-type semiconductor device, comprises: arranging a plurality of stacked chips obtained by stacking semiconductor chips on a plurality of stages on a support substrate; connecting a semiconductor chip of each stage in each stacked chip and the support substrate by wire while performing heating in units of stacked chips; performing plastic molding of each stacked chip; and separating the stacked chips from each other.An apparatus for manufacturing a stacked-type semiconductor device, comprising divided heater blocks formed under a support substrate on which a plurality of stacked chips obtained by stacking a plurality of semiconductor chips are arranged, the divided heater blocks being formed with respect to the stacked chips, and a heating device to selectively transmit heat to a stacked chip subjected to a wire bonding.

    Abstract translation: 一种层叠型半导体器件的制造方法,其特征在于,具有:将多个堆叠的芯片配置在支撑基板上的多个级上堆叠半导体芯片而得到的堆叠芯片; 在堆叠的芯片的单元中进行加热时,通过线将每个堆叠的芯片中的每个级的半导体芯片和支撑基板连接; 执行每个堆叠芯片的塑料模制; 并将堆叠的芯片彼此分离。 一种叠层型半导体器件的制造装置,其特征在于,具有形成在支撑基板的下方的分割加热块,在所述支撑基板上配置有通过堆叠多个半导体芯片而获得的多个堆叠的芯片,所述分割的加热器块相对于所述堆叠的芯片形成 以及加热装置,用于选择性地将热传递到经过引线接合的堆叠芯片。

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