公开(公告)号：US06944578B2

公开(公告)日：2005-09-13

申请号：US10868411

申请日：2004-06-15

申请人： Reginald R. Bowley, Jr. ,  Vincent J. Carlos ,  James E. Doran ,  Stephen E. Knight ,  Robert K. Leidy ,  Keith J. Machia ,  Joseph E. Shaver ,  Dianne L. Sundling

发明人： Reginald R. Bowley, Jr. ,  Vincent J. Carlos ,  James E. Doran ,  Stephen E. Knight ,  Robert K. Leidy ,  Keith J. Machia ,  Joseph E. Shaver ,  Dianne L. Sundling

IPC分类号： G03F7/20 ,  G03F9/02 ,  G03C5/00

CPC分类号： G03F7/70625 ,  G03F7/70641

摘要： A method uses three dimensional feature metrology for implementation of critical image control and feedback of lithographic focus and x/y tilt. The method is for measuring 3 dimensional profile changes in a photo sensitive film and feeding back compensatory exposure tool focus corrections to maintain a stable lithographic process. The measured focus change from the optimal tool focus offset is monitored directly on the critical product images for both contact hole and line images. Z Focus corrections and x/y tilt corrections are fed back independently of dose to maintain critical dimension (CD) control. Additionally, the method can be used to diagnose problems with the focusing system by measuring the relationship between line edge width and barometric pressure.

摘要翻译： 一种方法使用三维特征计量来实现关键图像控制和光刻焦点和x / y倾斜的反馈。 该方法用于测量光敏膜中的三维轮廓变化，并反馈补偿曝光工具对焦校正以保持稳定的光刻过程。 从最佳工具对焦偏移测量的焦点变化直接监测接触孔和线图像的关键产品图像。 Z独立于剂量反馈对焦校正和x / y倾斜校正以维持关键尺寸（CD）控制。 此外，该方法可用于通过测量线边宽度和大气压力之间的关系来诊断聚焦系统的问题。

公开(公告)号：US06892375B2

公开(公告)日：2005-05-10

申请号：US10281961

申请日：2002-10-29

申请人： Shigeru Kimura

发明人： Shigeru Kimura

IPC分类号： G03F1/00 ,  G06F17/50 ,  G03F9/02 ,  G06F19/00 ,  G06K9/58 ,  G21K5/00

CPC分类号： G03F1/68

摘要： Disclosed are data processing method, apparatus, and computer readable medium for generating data about mask, reticle, etc., for making exposure, and exposing method, apparatus and computer readable medium for performing exposure during manufacture of LSI, semiconductor device, magnetic device, liquid crystal, etc. When generating revision exposure data from design data, the correction position of revision data is designated and data processing of only designated correction portion is performed. Positional information of correction portion is added to header or footer section of revision exposure data.

摘要翻译： 公开了用于生成关于用于制造曝光的掩模，掩模版等的数据的数据处理方法，装置和计算机可读介质，以及用于在LSI，半导体器件，磁性器件的制造期间进行曝光的曝光方法，装置和计算机可读介质， 液晶等。当从设计数据生成修正曝光数据时，指定版本数据的校正位置，并且仅执行指定的校正部分的数据处理。 校正部分的位置信息被添加到修订曝光数据的页眉或页脚部分。

公开(公告)号：US06844918B2

公开(公告)日：2005-01-18

申请号：US10665364

申请日：2003-09-22

申请人： Ramon Navarro Y Koren ,  Hubertus Johannes Gertrudus Simons ,  Andre Bernardus Jeunink

发明人： Ramon Navarro Y Koren ,  Hubertus Johannes Gertrudus Simons ,  Andre Bernardus Jeunink

IPC分类号： G01B11/00 ,  G01B11/02 ,  G01B21/00 ,  G02B5/18 ,  G03F7/00 ,  G03F7/20 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027 ,  H01L21/3205 ,  H01L21/68 ,  H01L23/52 ,  H01S3/00 ,  G03B27/42 ,  G03B27/52

CPC分类号： G03F9/7084 ,  G03F9/7046 ,  G03F9/7049 ,  G03F9/7076 ,  G03F9/7088 ,  G03F9/7092

摘要： An alignment system for a lithographic apparatus has a source of alignment radiation that has a first wavelength and a second wavelength; a detection system that has a first wavelength channel arranged to receive alignment radiation from an alignment mark at the first wavelength and a second wavelength channel arranged to receive alignment radiation from the alignment mark at the second wavelength; and a position determining unit in communication with the detection system. The position determining unit processes information from the first and second wavelength channels in combination to determine a position of the alignment mark based on information from the first wavelength channel, information from the second wavelength channel or combined information from the first and second wavelength channels according to a relative strength of the alignment radiation detected at the first wavelength to alignment radiation detected at the second wavelength. A lithographic apparatus includes the above alignment system. Methods of alignment and manufacturing devices use the above alignment system and lithographic apparatus, respectively.

摘要翻译： 用于光刻设备的对准系统具有具有第一波长和第二波长的对准辐射源; 检测系统，其具有布置成从第一波长的对准标记接收对准辐射的第一波长信道和布置成在第二波长处接收来自对准标记的对准辐射的第二波长信道; 以及与检测系统通信的位置确定单元。 位置确定单元组合处理来自第一和第二波长信道的信息，以基于来自第一波长信道的信息，来自第二波长信道的信息或来自第一和第二波长信道的组合信息来确定对准标记的位置，根据 在第一波长处检测到的对准辐射与在第二波长处检测到的对准辐射的相对强度。 光刻设备包括上述对准系统。 对准和制造装置的方法分别使用上述对准系统和光刻设备。

公开(公告)号：US6287734B2

公开(公告)日：2001-09-11

申请号：US73962700

申请日：2000-12-20

申请人： NIPPON KOGAKU KK

发明人： IMAI YUJI

IPC分类号： G03F7/20 ,  G03F7/207 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027

CPC分类号： G03F7/70641 ,  G03F7/7065 ,  G03F7/70916 ,  G03F9/7034

摘要： An exposure method for a photolithographic process uses a projection exposure apparatus including a projection optical system. The surface of a first shot area on a wafer is caused to be coincident with an image plane of the projection optical system within an exposure field thereof so as to achieve focused condition, and an image of a reticle pattern is transferred onto the first shot area. Then, a second shot area is moved into the exposure field, during which the vertical position of the wafer is corrected by means of a Z/levelling-stage so as to compensate for the variation in the vertical position of the wafer W which could otherwise occur depending on the angle formed between the running plane of the wafer stage and the image plane. Then, an AF sensor system is used to measure and store a defocus amount of the second shot area relative to the image plane. Then, focusing and exposure are performed for the second shot area. This procedure is repeated for the shot areas on the wafer so as to obtain a plurality of defocus amounts, from which any foreign matter existing on the bottom of the wafer are detected. In another embodiment, the vertical position and tilt angle of the wafer are caused to be coincident with those of the image plane, and the first shot area is exposed. Then, the wafer is moved so as to position the second shot area into the exposure field, during which the tilt angle of the surface of the wafer is kept unchanged. Then, the tilt angle of the wafer is measured and stored. Thereafter, the vertical position and tilt angle of the wafer are caused to be coincident with those of the image plane, and the second shot area is exposed. Foreign matter are detected from a distribution of the tilt angles on the surface of the wafer.

摘要翻译： 用于光刻工艺的曝光方法使用包括投影光学系统的投影曝光装置。 使得晶片上的第一射出区域的表面与其投影光学系统的曝光场中的像面重合，以实现聚焦状态，并将掩模版图案的图像转印到第一照射区域 。 然后，将第二拍摄区域移动到曝光区域，在此期间通过Z /调平级校正晶片的垂直位置，以补偿晶片W的垂直位置的变化，否则可能会造成晶片W的垂直位置的变化 根据晶片台的运行平面和图像平面之间形成的角度发生。 然后，使用AF传感器系统来测量和存储相对于图像平面的第二拍摄区域的散焦量。 然后，对第二拍摄区域进行聚焦和曝光。 对于晶片上的照射区域重复该过程，以便获得多个散焦量，从而从晶片的底部存在任何杂质。 在另一个实施例中，使得晶片的垂直位置和倾斜角与图像平面的垂直位置和倾斜角一致，并且第一拍摄区域被曝光。 然后，使晶片移动，以将第二照射区域定位到曝光区域，在此期间晶片表面的倾斜角度保持不变。 然后，测量并存储晶片的倾斜角度。 此后，使晶片的垂直位置和倾斜角与图像平面的垂直位置和倾斜角一致，并且暴露第二拍摄区域。 从晶片表面上的倾斜角度的分布来检测异物。

公开(公告)号：US6163369A

公开(公告)日：2000-12-19

申请号：US205173

申请日：1998-12-04

申请人： Yuichi Yamada ,  Atsushi Kawahara

发明人： Yuichi Yamada ,  Atsushi Kawahara

IPC分类号： G01B11/00 ,  G01B11/26 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027 ,  G03B27/52

CPC分类号： G03F9/7026 ,  G03F9/7046

摘要： The position or the inclination of a substrate surface is detected at a high accuracy and a high speed, and corrected. When moving the substrate in a direction substantially at right angles to an optical axis of a projection optical system and feeding an area on the substrate into an image space of the projection optical system, at least one of the position and inclination in the optical axis direction of the substrate is detected, to bring that area into focus with the focal plane of the projection optical system. One of a first mode of conducting the measurement during travel of the substrate and a second mode of performing the measurement in a state in which that area has substantially been positioned in the image space is selected.

摘要翻译： 以高精度和高速检测基板表面的位置或倾斜度并进行校正。 当基板垂直于投影光学系统的光轴移动基板并将基板上的区域馈送到投影光学系统的图像空间中时，光轴方向上的位置和倾斜中的至少一个 检测基板，使该区域与投影光学系统的焦平面对准。 选择在基板行进期间进行测量的第一模式和在该区域基本上位于图像空间中的状态下执行测量的第二模式之一。

公开(公告)号：US5777721A

公开(公告)日：1998-07-07

申请号：US520245

申请日：1995-08-28

申请人： Susumu Makinouchi

发明人： Susumu Makinouchi

IPC分类号： G03F7/20 ,  G03F9/02 ,  H01L21/027 ,  G03B27/42

CPC分类号： G03F7/70358 ,  G03F7/70716 ,  Y10T74/20354

摘要： A coordinate position of a stage for supporting a wafer or a reticle which is driven by a linear motor includes a stator and a mover is measured by a laser interferometer, and a thrust obtained from a deviation between the measured coordinate position and an aimed coordinate position is output to a multiplier. Further, a cosine function corresponding to a phase between the stator and the mover is obtained on the basis of the measured coordinate position and is output to the multiplier. Then, an exciting current is supplied to an armature coil of the linear motor on the basis of an output of the multiplier.

摘要翻译： 用于支撑由线性电动机驱动的晶片或掩模版的平台的坐标位置由激光干涉仪测量，并且由所测量的坐标位置与目标坐标位置之间的偏差获得的推力 被输出到乘法器。 此外，基于所测量的坐标位置获得对应于定子和动子之间的相位的余弦函数，并输出到乘法器。 然后，基于乘法器的输出，向线性电动机的电枢线圈供给励磁电流。

公开(公告)号：US5710624A

公开(公告)日：1998-01-20

申请号：US564564

申请日：1995-11-29

申请人： Shinji Utamura

发明人： Shinji Utamura

IPC分类号： G03F9/02 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  G01N21/88

CPC分类号： G03F9/7026 ,  G03F7/707 ,  G03F7/70866

摘要： An aligner for exposing a pattern image of an original plate by projecting the image onto an exposure surface of a substrate, which is held on a table, in a focused state through a projection optical system includes a defocusing detection device for detecting a deviation from a focusing position at each of a plurality of points within an exposure region on the surface of the substrate, which is arranged at an exposure position, a device for determining an approximate plane of the exposure surface of the substrate within the exposure region on the basis of deviation detection values detected at the plurality of points by the defocusing detection device and a decision device for determining a deviation of the approximate plane of the exposure surface of the substrate, on the basis of the deviation detection values detected at each of the plurality of points, to decide whether contamination is present between the table and the back side of the substrate. Also disclosed is a contamination detecting method applied to such an aligner.

摘要翻译： 用于通过投影光学系统以聚焦状态将图像投影到保持在桌子上的基板的曝光表面上来曝光原版的图案图像的对准器包括：散焦检测装置，用于检测与 基于布置在曝光位置的基​​板的表面上的曝光区域内的多个点中的每一个上的聚焦位置，基于在曝光区域内确定基板的曝光表面的近似平面的装置 基于通过散焦检测装置在多个点处检测到的偏差检测值和用于基于在多个点中的每一个点处检测到的偏差检测值来确定基板的曝光表面的近似平面的偏差的判定装置 ，以确定桌子和衬底的背面之间是否存在污染物。 还公开了应用于这种对准器的污染检测方法。

公开(公告)号：US5306902A

公开(公告)日：1994-04-26

申请号：US939208

申请日：1992-09-01

申请人： Douglas S. Goodman

发明人： Douglas S. Goodman

IPC分类号： G02B7/28 ,  G02B21/00 ,  G03F7/207 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027 ,  H01L21/30 ,  G01V1/20

CPC分类号： G03F9/7026 ,  G02B21/0032 ,  G02B21/0072

摘要： A through-the-lens method and system for focusing a projected image onto an imaging surface employs a confocal process and apparatus. Electromagnetic radiation projected through a subresolution aperture of origin located in an object plane passes through a confocal imaging device which forms an image of the aperture in the image plane. The radiation strikes the surface and is reflected back through the confocal imaging device to the aperture. The power of reflected radiation passing through the aperture is detected/measured. The distance between the imaging surface and the imaging device is then adjusted to maximize the detected power.

摘要翻译： 用于将投影图像聚焦到成像表面上的透镜方法和系统采用共焦过程和装置。 通过位于物平面中的原始分裂孔径投影的电磁辐射通过共焦成像装置，其形成图像平面中的孔径的图像。 辐射照射到表面，并通过共聚焦成像装置反射回到孔。 检测/测量穿过孔径的反射辐射的功率。 然后调整成像表面和成像装置之间的距离以使检测到的功率最大化。

公开(公告)号：US4616908A

公开(公告)日：1986-10-14

申请号：US632449

申请日：1984-07-19

申请人： Michael C. King

发明人： Michael C. King

IPC分类号： H01L21/30 ,  G02B7/02 ,  G02B13/24 ,  G02B27/00 ,  G03F7/20 ,  G03F9/02 ,  H01L21/027 ,  G02B3/12 ,  G02B7/00

CPC分类号： G03F7/70241 ,  G02B13/24 ,  G02B7/021 ,  G03F7/70833 ,  G03F7/70883

摘要： In the microlithographic system disclosed herein, the spaces between elements in a projection lens are filled with flowing helium gas which substantially reduces the refraction errors caused by barometric changes in the atmosphere, even though the portions of the optical path outside the lens are exposed to the atmosphere.

摘要翻译： 在本文公开的微光刻系统中，投影透镜中的元件之间的空间填充有流动的氦气，即使在透镜外部的光路的部分暴露于大气中也可大大降低由大气中的大气变化引起的折射误差 大气层。

公开(公告)号：US4539835A

公开(公告)日：1985-09-10

申请号：US589902

申请日：1984-03-14

申请人： John R. Shambroom ,  Alan P. Sliski

发明人： John R. Shambroom ,  Alan P. Sliski

IPC分类号： G01B3/00 ,  G01B7/06 ,  G01B7/14 ,  G01B11/14 ,  G01B21/16 ,  G03F9/00 ,  G03F9/02 ,  H01J37/304

CPC分类号： G03F9/7053 ,  G01B7/082 ,  G01B7/14 ,  H01J37/304

摘要： In an electron beam lithography apparatus a capacitance height gauge is used to determine the distance between a reticule and electron optics. In order to calibrate the capacitance gauge an optical interferometer, including a mirror are mounted on the same axis as the capacitance gauge. The mirror is moved a predetermined distance so that the movement distance measured by the capacitance gauge and the interferometer can be compared.

摘要翻译： 在电子束光刻设备中，使用电容高度计来确定网格和电子光学器件之间的距离。 为了校准电容量规，包括反射镜的光学干涉仪安装在与电容量规相同的轴上。 反射镜移动预定距离，使得可以比较由电容量计和干涉仪测量的移动距离。