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    Aligner and contamination detecting method
    2.
    发明授权
    Aligner and contamination detecting method 失效
    对准器和污染检测方法

    公开(公告)号：US5710624A

    公开(公告)日：1998-01-20

    申请号：US564564

    申请日：1995-11-29

    Applicant: Shinji Utamura

    Inventor： Shinji Utamura

    IPC: G03F9/02 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  G01N21/88

    CPC classification number: G03F9/7026 ,  G03F7/707 ,  G03F7/70866

    Abstract: An aligner for exposing a pattern image of an original plate by projecting the image onto an exposure surface of a substrate, which is held on a table, in a focused state through a projection optical system includes a defocusing detection device for detecting a deviation from a focusing position at each of a plurality of points within an exposure region on the surface of the substrate, which is arranged at an exposure position, a device for determining an approximate plane of the exposure surface of the substrate within the exposure region on the basis of deviation detection values detected at the plurality of points by the defocusing detection device and a decision device for determining a deviation of the approximate plane of the exposure surface of the substrate, on the basis of the deviation detection values detected at each of the plurality of points, to decide whether contamination is present between the table and the back side of the substrate. Also disclosed is a contamination detecting method applied to such an aligner.

    Abstract translation: 用于通过投影光学系统以聚焦状态将图像投影到保持在桌子上的基板的曝光表面上来曝光原版的图案图像的对准器包括：散焦检测装置，用于检测与 基于布置在曝光位置的基​​板的表面上的曝光区域内的多个点中的每一个上的聚焦位置，基于在曝光区域内确定基板的曝光表面的近似平面的装置 基于通过散焦检测装置在多个点处检测到的偏差检测值和用于基于在多个点中的每一个点处检测到的偏差检测值来确定基板的曝光表面的近似平面的偏差的判定装置 ，以确定桌子和衬底的背面之间是否存在污染物。 还公开了应用于这种对准器的污染检测方法。

    Alignment method
    3.
    发明授权
    Alignment method 失效
    对齐方法

    公开(公告)号：US4881100A

    公开(公告)日：1989-11-14

    申请号：US273187

    申请日：1988-11-16

    Applicant: Akiya Nakai ,  Bunei Hamasaki ,  Shinji Utamura

    Inventor： Akiya Nakai ,  Bunei Hamasaki ,  Shinji Utamura

    IPC: G03F9/00

    CPC classification number: G03F9/7046

    Abstract: An alignment method usable in an apparatus for transferring images of a pattern of a mask onto different portions of a semiconductor wafer in a step-and-repeat manner, is disclosed. In this alignment method, positional deviation of at least one portion of the wafer with respect to the mask is measured and, on the basis of this measurement, the mask and the wafer are aligned with each other. After this,step-and-repeat exposure is executed. When the measurement of the positional deviation of the at least one portion of the wafer is unattainable, another portion of the wafer is selected and the deviation measurement is executed in respect to the selected portion. In another aspect of the invention, with regard to a rotational component of the deviation of the wafer, measurement and alignment are repeatedly executed until the rotational component becomes less than a predetermined value. Thereafter, the step-and-repeat exposure is initiated.

    Abstract translation: 公开了一种可用于将半导体晶片图案的图像以步进重复的方式传送到半导体晶片的不同部分的装置的对准方法。 在该对准方法中，测量晶片相对于掩模的至少一部分的位置偏移，并且基于该测量，掩模和晶片彼此对准。 之后，执行逐步重复曝光。 当晶片的至少一部分的位置偏移的测量是不可测量的时，选择晶片的另一部分，并相对于所选择的部分执行偏差测量。 在本发明的另一方面，关于晶片的偏离的旋转分量，重复执行测量和对准直到旋转分量变得小于预定值。 此后，开始步进和重复曝光。

    Exposure apparatus
    5.
    发明授权
    Exposure apparatus 失效
    曝光装置

    公开(公告)号：US5095190A

    公开(公告)日：1992-03-10

    申请号：US550194

    申请日：1990-07-10

    Applicant: Masato Aketagawa ,  Shinji Utamura

    Inventor： Masato Aketagawa ,  Shinji Utamura

    IPC: B23K26/06 ,  G03F7/20

    CPC classification number: G03F7/70241 ,  B23K26/066

    Abstract: A projection exposure apparatus includes an illumination system for illuminating a mask pattern; a projection optical system for projecting the mask pattern being illuminated upon the surface of a wafer so as to expose the same to the mask pattern; a wavelength detecting device effective to detect the wavelength of a light from a light source included in the illumination system; and a control device operable, in accordance with an output signal from the wavelength detecting device, to control at least one of the projection magnification of the projection optical system and the relative position of the wafer with respect to the imaging position of the mask pattern.

    Abstract translation: 投影曝光装置包括用于照亮掩模图案的照明系统; 投影光学系统，用于将照射在晶片表面上的掩模图案投影，以将其暴露于掩模图案; 波长检测装置，其有效地检测来自包括在照明系统中的光源的光的波长; 以及控制装置，其可以根据来自波长检测装置的输出信号来控制投影光学系统的投影倍率和晶片相对于掩模图案的成像位置的相对位置中的至少一个。

    Alignment method
    6.
    发明授权
    Alignment method 失效
    对齐方法

    公开(公告)号：US4811059A

    公开(公告)日：1989-03-07

    申请号：US104582

    申请日：1987-10-02

    Applicant: Bunei Hamasaki ,  Shinji Utamura ,  Akiya Nakai

    Inventor： Bunei Hamasaki ,  Shinji Utamura ,  Akiya Nakai

    IPC: G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/67 ,  H01L21/68 ,  G03B27/32

    CPC classification number: G03F9/70

    Abstract: An improved alignment method usable in a step-and-repeat type alignment and exposure apparatus for photolighographically transferring images of a pattern of a reticle onto different shot areas on a semiconductor wafer, for manufacture of semiconductor devices. According to this method, the alignment is executed with respect to an X direction, a Y direction and a rotational direction parallel to a plane containing the X and Y directions. With regard to the rotational direction, positional deviation of the wafer as a whole with respect to the reticle is measured and corrected prior to the initiation of the step-and-repeat photoprinting. With regard to the X and Y directions, detection and correction of any deviation are executed for each of the shot areas of the wafer. By this, high-accuracy and high-speed alignment is attainable for all the shot areas of the wafer.

    Abstract translation: 一种可用于步进重复型对准和曝光装置的改进的对准方法，用于将半导体晶片上的不同射出区域的图案的图像转印到半导体器件的制造中。 根据该方法，相对于与包含X和Y方向的平面平行的X方向，Y方向和旋转方向执行对准。 关于旋转方向，在开始步进重复照相打印之前测量和校正晶片相对于掩模版的位置偏差。 对于X方向和Y方向，对于晶片的每个拍摄区域执行任何偏差的检测和校正。 由此，可以对晶片的所有照射区域实现高精度和高速对准。

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