公开(公告)号：US08803296B2

公开(公告)日：2014-08-12

申请号：US13784423

申请日：2013-03-04

Applicant: Texas Instruments Incorporated

Inventor： William Robert Morrison ,  Mark Christopher Fisher ,  Murali Hanabe ,  Ganapathy Subramaniam Sivakumar ,  Simon Joshua Jacobs

IPC: H01L23/58 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00984 ,  B81B3/0005 ,  B81B7/0032 ,  B81C1/00261 ,  B81C1/0096 ,  B81C2201/112 ,  H01L21/02112 ,  H04W4/02 ,  Y10S257/914

Abstract: A device has a microelectromechanical system (MEMS) component with at least one surface and a coating disposed on at least a portion of the surface. The coating has a compound of the formula M(CnF2n+1Or), wherein M is a polar head group and wherein n≧2r. The value of n may range from 2 to about 20, and the value of r may range from 1 to about 10. The value of n plus r may range from 3 to about 30, and a ratio of n:r may have a value of about 2:1 to about 20:1.

Abstract translation: 器件具有微机电系统（MEMS）部件，其中至少一个表面和涂层设置在表面的至少一部分上。 该涂层具有式M（CnF2n + 10r）的化合物，其中M是极性头基，其中n≥2r。 n的值可以在2至约20的范围内，并且r的值可以在1至约10的范围内.n加r的值可以在3至约30的范围内，并且n：r的比可以具有值 为约2：1至约20：1。

公开(公告)号：US07923336B2

公开(公告)日：2011-04-12

申请号：US12609670

申请日：2009-10-30

Applicant: Kil-Ho Lee ,  Chan Lim

Inventor： Kil-Ho Lee ,  Chan Lim

IPC: H01L21/316

CPC classification number: H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  Y10S257/914 ,  H01L2924/00

Abstract: A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.

Abstract translation: 提供了高k电介质膜，形成高k电介质膜的方法以及形成相关半导体器件的方法。 高k电介质膜包括具有第一氮含量和第一硅含量的金属 - 氮氧化硅的底层和具有第二氮含量和第二硅含量的金属 - 氮氧化硅的顶层。 第二氮含量高于第一氮含量，第二硅含量高于第一硅含量。

公开(公告)号：US07629200B2

公开(公告)日：2009-12-08

申请号：US11725284

申请日：2007-03-19

Applicant: Seiichi Miyai ,  Shuichi Oka

Inventor： Seiichi Miyai ,  Shuichi Oka

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC classification number: G06K9/00053 ,  Y10S257/914 ,  Y10S438/931

Abstract: A fingerprint detection device has a fingerprint sensor chip and a diamond-like carbon (DLC) film covering the outermost surface of the sensor chip. The DLC film provides sufficient strength and enhanced electrostatic discharge withstand voltage to the fingerprint sensor chip. Thus, the DLC film protects the fingerprint sensor chip without any conventional protective cover. The DLC film is less scratchable and less stainable. Since the fingerprint detection device has no protective cover, the device can be provided in a thin and compact form. In addition, the device has high reliability.

Abstract translation: 指纹检测装置具有覆盖传感器芯片的最外表面的指纹传感器芯片和类金刚石碳（DLC）膜。 DLC膜为指纹传感器芯片提供足够的强度和增强的静电放电耐受电压。 因此，DLC胶片保护指纹传感器芯片，而无需任何传统的保护盖。 DLC膜不易刮伤，染色较少。 由于指纹检测装置没有保护罩，所以可以以薄而紧凑的形式提供装置。 此外，该设备具有高可靠性。

公开(公告)号：US20080246100A1

公开(公告)日：2008-10-09

申请号：US12117274

申请日：2008-05-08

Applicant: Kil-Ho Lee ,  Chan Lim

Inventor： Kil-Ho Lee ,  Chan Lim

IPC: H01L29/78 ,  H01L29/02 ,  B05D5/12 ,  H05H1/00

CPC classification number: H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  Y10S257/914 ,  H01L2924/00

Abstract: A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.

Abstract translation: 提供了高k电介质膜，形成高k电介质膜的方法以及形成相关半导体器件的方法。 高k电介质膜包括具有第一氮含量和第一硅含量的金属 - 氮氧化硅的底层和具有第二氮含量和第二硅含量的金属 - 氮氧化硅的顶层。 第二氮含量高于第一氮含量，第二硅含量高于第一硅含量。

公开(公告)号：US06737168B1

公开(公告)日：2004-05-18

申请号：US09762931

申请日：2001-02-14

Applicant: Shinichi Yamagata ,  Kazuya Kamitake ,  Yugaku Abe ,  Akira Fukui

Inventor： Shinichi Yamagata ,  Kazuya Kamitake ,  Yugaku Abe ,  Akira Fukui

IPC: B32B904

CPC classification number: H01L23/3731 ,  C04B35/573 ,  C04B41/009 ,  C04B41/5096 ,  C04B41/51 ,  C04B41/85 ,  C04B41/88 ,  C04B2111/00844 ,  H01L23/147 ,  H01L23/15 ,  H01L23/3733 ,  H01L23/3738 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/16225 ,  H01L2224/32188 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/01019 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/181 ,  Y10S257/914 ,  Y10T428/249953 ,  Y10T428/249956 ,  Y10T428/249957 ,  C04B41/4523 ,  C04B35/00 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/00012

Abstract: A composite material that consists mainly of ceramic and semi-metal, that is high in thermal conductivity, that is light in weight, and that has high compatibility in coefficient of thermal expansion (CTE) with a semiconductor element and another member comprising ceramic; a member comprising this composite material; and a semiconductor device comprising the member. The composite material has a structure in which the interstices of a three-dimensional network structure comprising ceramic are filled with a semi-metal-containing constituent produced by deposition after melting, has a CTE of 6 ppm/° C. or less, and has a thermal conductivity of 150 W/m·K or more. The semiconductor device comprises the composite material. The composite material can be obtained by filling the pores of a porous body consisting mainly of ceramic with a semi-metal-containing constituent.

Abstract translation: 主要由陶瓷和半金属组成的复合材料，其导热性高，重量轻，并且与半导体元件和包含陶瓷的另一种构件具有高的热膨胀系数（CTE）的相容性高; 包含该复合材料的构件; 以及包括该构件的半导体器件。 复合材料具有这样的结构，其中包含陶瓷的三维网状结构的间隙填充有熔融后通过沉积生产的含半金属的组分，其CTE为6ppm /℃或更低，并且具有 导热系数为150W / mK以上。 半导体器件包括复合材料。 复合材料可以通过填充主要由具有半金属的成分的陶瓷组成的多孔体的孔而获得。

公开(公告)号：US06667523B2

公开(公告)日：2003-12-23

申请号：US10121412

申请日：2002-04-12

Applicant: Dustin A. Woodbury ,  Joseph A. Czagas

Inventor： Dustin A. Woodbury ,  Joseph A. Czagas

IPC: H01L2976

CPC classification number: H01L28/20 ,  H01L21/28512 ,  H01L21/28518 ,  Y10S257/914

Abstract: A semiconductor device or integrated circuit has high and low resistive contacts. Mobility spoiling ions such as carbon are implanted into all contacts of the substrate. High resistive contacts are temporarily covered with an oxide during processing to prevent silicide from forming due to interaction between a siliciding metal and the implanted mobility spoiling ions in the contacts. The resulting high resistance contacts have highly linear I-V curves, even at high voltages. Selective silicide formation converts some of the contacts back to low resistance contacts as a result of interaction between a siliciding metal and the implanted mobility spoiling ions in the low resistance contacts.

公开(公告)号：US06635520B1

公开(公告)日：2003-10-21

申请号：US09406794

申请日：1999-09-28

Applicant: Shunpei Yamazaki

Inventor： Shunpei Yamazaki

IPC: H01L2100

CPC classification number: H01L29/66757 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02667 ,  H01L21/268 ,  H01L29/78618 ,  H01L29/78666 ,  Y10S257/914

Abstract: An insulated gate field effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode is formed on a portion of the surface of said semiconductor layer, and a gate insulated film is disposed between said gate electrode and said semiconductor layer. A non-single-crystalline channel region is defined within said semiconductor layer just below said gate electrode. A source region and a drain region are transformed from and defined within said semiconductor layer immediately adjacent to said channel region in an opposed relation, said source and drain regions being crystallized to a higher degree than that of said channel region by selectively irradiating portions of said semiconductor layer using said gate electrode as a mask.

Abstract translation: 绝缘栅场效应晶体管包括形成在衬底上的非单晶半导体层，在所述半导体层的表面的一部分上形成栅电极，并且栅极绝缘膜设置在所述栅电极和所述半导体之间 层。 在刚好在所述栅电极正下方的所述半导体层内限定非单晶沟道区。 源极区域和漏极区域以相反的关系从紧邻所述沟道区域的所述半导体层中变换并限定在所述半导体层中，所述源极区域和漏极区域通过选择性地照射所述第二区域的部分而被结晶到比所述沟道区域的程度更高的程度 使用所述栅电极作为掩模的半导体层。

公开(公告)号：US20030077916A1

公开(公告)日：2003-04-24

申请号：US09977008

申请日：2001-10-11

Applicant: Applied Materials, Inc.

Inventor： Ping Xu ,  Li-Qun Xia ,  Larry A. Dworkin ,  Mehul Naik

IPC: H01L021/31

CPC classification number: H01L21/0234 ,  C23C16/325 ,  C23C16/401 ,  G03F7/16 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76832 ,  Y10S257/914

Abstract: A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.

Abstract translation: 提供了一种处理衬底的方法，包括通过将包含硅和碳的电介质层暴露于惰性气体的等离子体，以及在包含硅和碳的电介质层上沉积光致抗蚀剂来处理包括硅和碳的电介质层的表面。 电介质层可以包括在第一介电层上原位形成的包含硅，碳和氮的第一介电层和第二层无氮硅和碳的材料，以及包含硅，氧和碳的第三介电层 在第二电介质层上。

公开(公告)号：US20020109230A1

公开(公告)日：2002-08-15

申请号：US10121412

申请日：2002-04-12

Inventor： Dustin A. Woodbury ,  Joseph A. Czagas

IPC: H01L027/082

CPC classification number: H01L28/20 ,  H01L21/28512 ,  H01L21/28518 ,  Y10S257/914

Abstract: A semiconductor device or integrated circuit has high and low resistive contacts. Mobility spoiling ions such as carbon are implanted into all contacts of the substrate. High resistive contacts are temporarily covered with an oxide during processing to prevent silicide from forming due to interaction between a siliciding metal and the implanted mobility spoiling ions in the contacts. The resulting high resistance contacts have highly linear I-V curves, even at high voltages. Selective silicide formation converts some of the contacts back to low resistance contacts as a result of interaction between a siliciding metal and the implanted mobility spoiling ions in the low resistance contacts.

Abstract translation: 半导体器件或集成电路具有高和低电阻触点。 迁移性破坏离子如碳被注入到基底的所有触点中。 在加工期间，高电阻触点被氧化物暂时覆盖，以防止硅化物由于硅化金属与接触中植入的迁移率损坏离子之间的相互作用而形成。 所产生的高电阻触点即使在高电压下也具有高度线性的I-V曲线。 选择性硅化物形成由于硅化金属与低电阻触点中植入的迁移率损坏离子之间的相互作用，将一些触点转换回低电阻触点。

公开(公告)号：US20010021590A1

公开(公告)日：2001-09-13

申请号：US09820075

申请日：2001-03-28

Inventor： Nobuo Matsuki

IPC: H01L021/31

CPC classification number: B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10S257/914 ,  C08G77/00 ,  H01L2924/00

Abstract: A siloxan polymer insulation film has a dielectric constant of 3.3 or lower and has nullSiR2Onull repeating structural units. The siloxan polymer has dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound expressed by the general formula SinullOnullCxHy (null, null, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.

Abstract translation: 硅氧烷聚合物绝缘膜的介电常数为3.3以下，具有-SiR2O-重复结构单元。 硅氧烷聚合物在半导体衬底上具有介电常数，高热稳定性和高耐湿性。 硅氧烷聚合物通过直接蒸发由通式SialphaObeta C x H y（α，β，x和y为整数）表示的含硅烃化合物形成，然后将蒸发的化合物引入等离子体CVD装置的反应室。 通过减少反应气体的总流量来延长源气体的停留时间，以形成具有低介电常数的微孔多孔结构的硅氧烷聚合物膜。