公开(公告)号：US20040156987A1

公开(公告)日：2004-08-12

申请号：US10773060

申请日：2004-02-04

Applicant: Applied Materials, Inc.

Inventor： Kang Sub Yim ,  Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric P. Hollar

IPC: C23C016/00

CPC classification number: C23C16/401 ,  B05D1/60 ,  B05D3/068 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76825

Abstract: A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.

Abstract translation: 一种沉积低介电常数膜的方法是通过使含有一种或多种线性无氧有机硅化合物的气体混合物，一种或多种包含一个环和一个或两个碳 - 碳双键的无氧烃化合物反应在 环和一种或多种氧化性气体。 任选地，低介电常数膜在沉积后进行后处理。 一方面，后处理是电子束处理。

公开(公告)号：US20030211244A1

公开(公告)日：2003-11-13

申请号：US10409887

申请日：2003-04-08

Applicant: Applied Materials, Inc.

Inventor： Lihua Li ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Y. Yieh ,  Son Van Nguyen ,  Lester A. D'Cruz ,  Troy Kim ,  Dian Sugiarto ,  Peter Wai-Man Lee ,  Hichem M'Saad ,  Melissa M. Tam ,  Yi Zheng ,  Srinivas D. Nemani

IPC: B05D005/12 ,  C23C016/00 ,  B05D003/00

CPC classification number: C09D4/00 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02351 ,  H01L21/3122 ,  C08G77/00

Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided by reacting a gas mixture including one or more organosilicon compounds and one or more oxidizing gases. In one aspect, the organosilicon compound comprises a hydrocarbon component having one or more unsaturated carbon-carbon bonds, and in another aspect, the gas mixture further comprises one or more aliphatic hydrocarbon compounds having one or more unsaturated carbon-carbon bonds. The low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment, and in another aspect, the post-treatment is an annealing process.

Abstract translation: 通过使包含一种或多种有机硅化合物和一种或多种氧化性气体的气体混合物反应，提供介电常数为约3.0以下，优选约2.5以下的低介电常数膜的方法。 一方面，有机硅化合物包含具有一个或多个不饱和碳 - 碳键的烃组分，另一方面，气体混合物还包含一种或多种具有一个或多个不饱和碳 - 碳键的脂族烃化合物。 沉积后对低介电常数膜进行后处理。 一方面，后处理是电子束处理，另一方面，后处理是退火处理。

公开(公告)号：US20030186000A1

公开(公告)日：2003-10-02

申请号：US10115832

申请日：2002-04-02

Applicant: Applied Materials, Inc.

Inventor： Lihua Li ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Yieh

IPC: H05H001/24

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31633

Abstract: A method for depositing a low dielectric constant film having an improved hardness and elastic modulus is provided. In one aspect, the method comprises depositing a low dielectric constant film having silicon, carbon, and hydrogen, and then treating the deposited film with a plasma of helium, hydrogen, or a mixture thereof at conditions sufficient to increase the hardness of the film.

Abstract translation: 提供了一种沉积具有改进的硬度和弹性模量的低介电常数膜的方法。 一方面，该方法包括沉积具有硅，碳和氢的低介电常数膜，然后在足以提高膜硬度的条件下用氦，氢或其混合物的等离子体处理沉积膜。

公开(公告)号：US20030077916A1

公开(公告)日：2003-04-24

申请号：US09977008

申请日：2001-10-11

Applicant: Applied Materials, Inc.

Inventor： Ping Xu ,  Li-Qun Xia ,  Larry A. Dworkin ,  Mehul Naik

IPC: H01L021/31

CPC classification number: H01L21/0234 ,  C23C16/325 ,  C23C16/401 ,  G03F7/16 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76832 ,  Y10S257/914

Abstract: A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.

Abstract translation: 提供了一种处理衬底的方法，包括通过将包含硅和碳的电介质层暴露于惰性气体的等离子体，以及在包含硅和碳的电介质层上沉积光致抗蚀剂来处理包括硅和碳的电介质层的表面。 电介质层可以包括在第一介电层上原位形成的包含硅，碳和氮的第一介电层和第二层无氮硅和碳的材料，以及包含硅，氧和碳的第三介电层 在第二电介质层上。

公开(公告)号：US20030077857A1

公开(公告)日：2003-04-24

申请号：US10293096

申请日：2002-11-12

Applicant: Applied Materials, Inc.

Inventor： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

IPC: H01L021/8238

CPC classification number: H01L21/02126 ,  C23C16/0218 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02071 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76837 ,  Y10S438/931

Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

Abstract translation: 一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。 该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。 致密化通常在还原环境中进行，同时加热基底。 致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

公开(公告)号：US20030013295A1

公开(公告)日：2003-01-16

申请号：US10236800

申请日：2002-09-06

Applicant: Applied Materials, Inc.

Inventor： Li-Qun Xia ,  Paul Fisher ,  Margaret Lynn Gotuaco ,  Frederic Gaillard ,  Ellie Yieh

IPC: H01L021/4763

CPC classification number: H01L21/02126 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76813 ,  H01L21/76828 ,  H01L21/76829

Abstract: A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.

公开(公告)号：US20020155386A1

公开(公告)日：2002-10-24

申请号：US09839869

申请日：2001-04-20

Applicant: Applied Materials, Inc.

Inventor： Ping Xu ,  Jia Lee ,  Ishing Lou ,  Li-Qun Xia

IPC: C23C016/00 ,  G03F007/00

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/325 ,  C23C16/345 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76802 ,  H01L21/76813 ,  H01L21/76826 ,  H01L21/76829

Abstract: A method of forming a silicon carbide layer, a silicon nitride layer, an organosilicate layer is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a fluorine source in the presence of an electric field. The silicon nitride layer is formed by reacting a gas mixture comprising a silicon source, a nitrogen source, and a fluorine source in the presence of an electric field. The organosilicate layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, an oxygen source and a fluorine source in the presence of an electric field. The silicon carbide layer, the silicon nitride layer and the organosilicate layer are all compatible with integrated circuit fabrication processes.

Abstract translation: 公开了一种形成碳化硅层，氮化硅层，有机硅酸盐层的方法。 在存在电场的情况下使包含硅源，碳源和氟源的气体混合物反应形成碳化硅层。 氮化硅层通过在电场存在下使包含硅源，氮源和氟源的气体混合物反应而形成。 有机硅酸盐层通过在电场存在下使包含硅源，碳源，氧源和氟源的气体混合物反应而形成。 碳化硅层，氮化硅层和有机硅酸盐层都与集成电路制造工艺兼容。

公开(公告)号：US20040175929A1

公开(公告)日：2004-09-09

申请号：US10383837

申请日：2003-03-07

Applicant: Applied Materials, Inc.

Inventor： Francimar Campana Schmitt ,  Li-Qun Xia ,  Son Van Nguyen ,  Shankar Venkataraman

IPC: H01L021/4763

CPC classification number: H01L21/76835 ,  C23C16/0272 ,  C23C16/30 ,  C23C16/325 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832

Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

Abstract translation: 提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。 一方面，本发明提供了一种处理衬底的方法，包括在衬底上沉积阻挡层，其中阻挡层包括硅和碳并具有小于4的介电常数，沉积与阻挡层相邻的电介质起始层，以及 沉积与电介质起始层相邻的第一电介质层，其中介电层包括硅，氧和碳并且具有约3或更小的介电常数。

公开(公告)号：US20040157453A1

公开(公告)日：2004-08-12

申请号：US10745344

申请日：2003-12-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Gerardo A. Delgadino ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li Huang ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/76826 ,  H01L21/76811 ,  H01L21/76813

Abstract: A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

Abstract translation: 一种制造互连结构的方法，包括将通孔蚀刻到上部低K电介质层中并进入下部低K电介质层的硬化部分。 通孔由形成在光致抗蚀剂层中的图案限定。 然后剥离光致抗蚀剂层，并且将由硬掩模限定的通孔的沟槽蚀刻到上部低K电介质层中，并且同时蚀刻到下部低K电介质层的硬化部分中的通孔为 进一步蚀刻到下部低K介电层中。 结果是低K电介质双镶嵌结构。

公开(公告)号：US20040067308A1

公开(公告)日：2004-04-08

申请号：US10266551

申请日：2002-10-07

Applicant: Applied Materials, Inc.

Inventor： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia

IPC: C23C016/00

CPC classification number: H01L21/02167 ,  C23C16/0272 ,  C23C16/325 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/314 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.

Abstract translation: 提供了一种处理基材的方法，包括提供包含含有苯基的有机硅化合物的处理气体至处理室，并使处理气体反应沉积在大马士革或双镶嵌中可用作阻挡层的低k碳化硅阻挡层 低k电介质材料的应用。 提供了一种用于沉积在低k碳化硅阻挡层上基本上没有从包含无氧有机硅化合物的处理气体连接到硅原子上的苯基沉积碳化硅盖层的方法。