-
公开(公告)号：US20190202684A1
公开(公告)日：2019-07-04
申请号：US15859184
申请日：2017-12-29
Applicant: Texas Instruments Incorporated
Inventor： Ganapathy Subramaniam Sivakumar , Chad Alan McKay
CPC classification number: B81B7/0058 , B81B2201/042 , B81B2203/0315 , B81B2207/012 , B81C1/00269 , B81C2203/0109 , B81C2203/0118 , B81C2203/036 , B81C2203/0707
Abstract: In described examples, a bondline structure is arranged along a periphery of a cavity. The bondline structure extends from a first substrate and is configured to bond with an interposer arranged on a second substrate. A diffusion barrier is arranged on the first substrate for contacting the interposer. The diffusion barrier is arranged to impede a contaminant against migrating from the bondline structure and entering the cavity.
-
公开(公告)号：US20200216306A1
公开(公告)日：2020-07-09
申请号：US16820477
申请日：2020-03-16
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Ganapathy Subramaniam Sivakumar , Chad Alan McKay
Abstract: In described examples, a bondline structure is arranged along a periphery of a cavity. The bondline structure extends from a first substrate and is configured to bond with an interposer arranged on a second substrate. A diffusion barrier is arranged on the first substrate for contacting the interposer. The diffusion barrier is arranged to impede a contaminant against migrating from the bondline structure and entering the cavity.
-
Patent Agency Ranking
公开(公告)号：US11505451B2
公开(公告)日：2022-11-22
申请号：US16820477
申请日：2020-03-16
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Ganapathy Subramaniam Sivakumar , Chad Alan McKay
Abstract: In described examples, a bondline structure is arranged along a periphery of a cavity. The bondline structure extends from a first substrate and is configured to bond with an interposer arranged on a second substrate. A diffusion barrier is arranged on the first substrate for contacting the interposer. The diffusion barrier is arranged to impede a contaminant against migrating from the bondline structure and entering the cavity.
-
公开(公告)号：US08803296B2
公开(公告)日：2014-08-12
申请号：US13784423
申请日：2013-03-04
Applicant: Texas Instruments Incorporated
Inventor： William Robert Morrison , Mark Christopher Fisher , Murali Hanabe , Ganapathy Subramaniam Sivakumar , Simon Joshua Jacobs
CPC classification number: B81C1/00984 , B81B3/0005 , B81B7/0032 , B81C1/00261 , B81C1/0096 , B81C2201/112 , H01L21/02112 , H04W4/02 , Y10S257/914
Abstract: A device has a microelectromechanical system (MEMS) component with at least one surface and a coating disposed on at least a portion of the surface. The coating has a compound of the formula M(CnF2n+1Or), wherein M is a polar head group and wherein n≧2r. The value of n may range from 2 to about 20, and the value of r may range from 1 to about 10. The value of n plus r may range from 3 to about 30, and a ratio of n:r may have a value of about 2:1 to about 20:1.
Abstract translation: 器件具有微机电系统（MEMS）部件，其中至少一个表面和涂层设置在表面的至少一部分上。 该涂层具有式M（CnF2n + 10r）的化合物，其中M是极性头基，其中n≥2r。 n的值可以在2至约20的范围内，并且r的值可以在1至约10的范围内.n加r的值可以在3至约30的范围内，并且n：r的比可以具有值 为约2：1至约20：1。
-
公开(公告)号：US20230064645A1
公开(公告)日：2023-03-02
申请号：US18047302
申请日：2022-10-18
Applicant: Texas Instruments Incorporated
Inventor： Ganapathy Subramaniam Sivakumar , Chad Alan McKay
Abstract: In described examples, apparatus includes a first substrate that delimits a surface of a cavity and a bondline structure arranged along a periphery of the cavity, where the bondline structure extends from the first substrate, and the bondline structure configured to bond with an interposer arranged on a second substrate. The apparatus also includes a diffusion barrier on the first substrate, the diffusion barrier configured to contact the interposer and impede a contaminant against migrating from the bondline structure and entering the cavity.
-
公开(公告)号：US09487397B2
公开(公告)日：2016-11-08
申请号：US14844779
申请日：2015-09-03
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： William Robert Morrison , Mark Christopher Fisher , Murali Hanabe , Ganapathy Subramaniam Sivakumar , Simon Joshua Jacobs
CPC classification number: B81C1/00984 , B81B3/0005 , B81B7/0032 , B81C1/00261 , B81C1/0096 , B81C2201/112 , H01L21/02112 , H04W4/02 , Y10S257/914
Abstract: A device has a microelectromechanical system (MEMS) component with at least one surface and a coating disposed on at least a portion of the surface. The coating has a compound of the formula M(CnF2n+1Or), wherein M is a polar head group and wherein n≧2r. The value of n may range from 2 to about 20, and the value of r may range from 1 to about 10. The value of n plus r may range from 3 to about 30, and a ratio of n:r may have a value of about 2:1 to about 20:1.
-
公开(公告)号：US09150410B2
公开(公告)日：2015-10-06
申请号：US14333829
申请日：2014-07-17
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： William Robert Morrison , Mark Christopher Fisher , Murali Hanabe , Ganapathy Subramaniam Sivakumar , Simon Joshua Jacobs
CPC classification number: B81C1/00984 , B81B3/0005 , B81B7/0032 , B81C1/00261 , B81C1/0096 , B81C2201/112 , H01L21/02112 , H04W4/02 , Y10S257/914
Abstract: A device has a microelectromechanical system (MEMS) component with at least one surface and a coating disposed on at least a portion of the surface. The coating has a compound of the formula M(CnF2n+1Or), wherein M is a polar head group and wherein n≧2r. The value of n may range from 2 to about 20, and the value of r may range from 1 to about 10. The value of n plus r may range from 3 to about 30, and a ratio of n:r may have a value of about 2:1 to about 20:1.
Abstract translation: 器件具有微机电系统（MEMS）部件，其中至少一个表面和涂层设置在表面的至少一部分上。 该涂层具有式M（CnF2n + 10r）的化合物，其中M是极性头基，其中n≥2r。 n的值可以在2至约20的范围内，并且r的值可以在1至约10的范围内.n加r的值可以在3至约30的范围内，并且n：r的比可以具有值 为约2：1至约20：1。
-
-
-
-
-
-
Search Results
7
records
(took 0.021 seconds)
