公开(公告)号：US12007520B2

公开(公告)日：2024-06-11

申请号：US17368846

申请日：2021-07-07

申请人： Sumitomo Riko Company Limited

发明人： Katsuhiko Nakano ,  Shinya Tahara ,  Masaki Nasu

IPC分类号： G01V3/08 ,  B06B1/02 ,  B60R21/015 ,  G01D5/241 ,  H04R19/00

CPC分类号： G01V3/088 ,  B06B1/0292 ,  B60R21/01552 ,  G01D5/241 ,  H04R19/00

摘要： Provided is an electrostatic transducer capable of reducing thickness and enhancing detection precision or operation precision. An electrostatic transducer (1) includes an insulating sheet (11), a first electrode sheet (12) arranged on the front surface side of the insulating sheet (11) and having a plurality of first through holes (12a) penetrating in a thickness direction, and a second electrode sheet (13) arranged on the back surface side of the insulating sheet (11) and having no through holes in the thickness direction or having a plurality of second through holes (13a) which have a smaller aperture ratio than the plurality of first through holes (12a).

公开(公告)号：US20180359570A1

公开(公告)日：2018-12-13

申请号：US15740986

申请日：2016-07-01

申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN

发明人： Khalil NAJAFI ,  Yemin TANG

IPC分类号： H04R19/00 ,  H04R17/02 ,  H04R31/00 ,  H04R19/04 ,  B81C1/00

CPC分类号： H04R19/005 ,  B81C1/00269 ,  H04R17/00 ,  H04R17/02 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

摘要： Techniques are presented for fabricating transducers and other types of microstructures having high aspect ratios. To achieve high aspect ratios, wafers are etched from both sides for example using deep reactive ion etching. The three-dimensional structure is designed to have an overall footprint less than four hundred micrometers with a thickness on the order of 0.5-2 millimeters as compared to conventional planar devices.

公开(公告)号：US20180161813A1

公开(公告)日：2018-06-14

申请号：US15579383

申请日：2015-06-04

申请人： HITACHI, LTD.

发明人： Hiroaki HASEGAWA ,  Taiichi TAKEZAKI ,  Shuntaro MACHIDA ,  Daisuke RYUZAKI

IPC分类号： B06B1/02 ,  H04R31/00

CPC分类号： B06B1/0292 ,  A61B8/4483 ,  B81B3/0037 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2207/053 ,  G01N29/2406 ,  H03H9/174 ,  H03H9/24 ,  H04R19/00 ,  H04R31/00

摘要： An ultrasonic transducer element includes a substrate, a lower electrode on a first surface of the substrate, a first insulating film on the lower electrode, a first cavity layer on the first insulating film, a second insulating film on the first cavity layer, an upper electrode on the second insulating film that overlaps the first cavity layer, a third insulating film on the upper electrode, a second cavity layer on the third insulating film, a fourth insulating film on the second cavity layer, a fixing portion formed by the second to fourth insulating films, a movable portion in a membrane insides the second cavity layer, a first connection portion and a second connection portion that are stacked with a gap and the connection portions are configured by the second to fourth insulating films connecting the movable portion and the fixing portion.

公开(公告)号：US09947858B2

公开(公告)日：2018-04-17

申请号：US14655811

申请日：2013-12-26

申请人： Dow Corning Corporation ,  Dow Corning Toray Co., Ltd.

发明人： Toyohiko Fujisawa ,  Hiroshi Fukui ,  Haruhiko Furukawa ,  Peter Cheshire Hupfield ,  Hong Sub Kim ,  Eiji Kitaura ,  Kent R. Larson ,  Wataru Nishiumi ,  Takuya Ogawa ,  Masayuki Onishi ,  Kouichi Ozaki ,  Keiji Wakita

IPC分类号： H01L41/187 ,  H01L41/193 ,  C08K3/22 ,  C08L83/04 ,  H01B3/10 ,  H01B3/46 ,  H01L41/45 ,  C08K3/04 ,  H04R19/00 ,  C08K3/34 ,  C08K3/36 ,  H01L41/083 ,  C08G77/12 ,  C08G77/20 ,  H04R19/02 ,  H04R19/04

CPC分类号： H01L41/193 ,  C08G77/12 ,  C08G77/20 ,  C08K3/01 ,  C08K3/04 ,  C08K3/22 ,  C08K3/34 ,  C08K3/36 ,  C08K9/06 ,  C08K2003/2206 ,  C08K2003/2227 ,  C08K2003/2237 ,  C08K2003/2241 ,  C08K2003/2275 ,  C08K2003/2296 ,  C08K2201/005 ,  C08K2201/006 ,  C08L83/00 ,  C08L83/04 ,  H01B3/10 ,  H01B3/46 ,  H01L41/083 ,  H01L41/45 ,  H04R19/00 ,  H04R19/02 ,  H04R19/04

摘要： The present invention provides a curable organopolysiloxane composition capable of producing a cured article that can be used as a transducer and provided with excellent mechanical characteristics and/or electrical characteristics. The present invention also relates to a novel curable organopolysiloxane composition for transducer use comprising a curable organopolysiloxane composition, dielectric inorganic fine particles having a specific dielectric constant of greater than or equal to 10, and fine particles having a specific dielectric constant of less than 10.

公开(公告)号：US09924925B2

公开(公告)日：2018-03-27

申请号：US15482062

申请日：2017-04-07

申请人： OLYMPUS CORPORATION

发明人： Takanao Fujimura

IPC分类号： A61B8/00 ,  A61B8/12 ,  H04R17/00 ,  H04R19/00 ,  A61B1/00 ,  A61B1/06 ,  A61B8/14 ,  A61B1/307

CPC分类号： A61B8/4483 ,  A61B1/00045 ,  A61B1/06 ,  A61B1/307 ,  A61B8/0841 ,  A61B8/12 ,  A61B8/14 ,  A61B8/4281 ,  A61B8/4444 ,  A61B8/461 ,  H04R17/00 ,  H04R19/00

摘要： Provided is an ultrasound transducer for irradiating a subject with ultrasound and receiving an ultrasound echo reflected from the subject. The ultrasound transducer includes a plurality of piezoelectric elements configured to emit ultrasound according to input of an electric signal and convert ultrasound incident from outside into an electric signal, and a mask portion provided between the plurality of piezoelectric elements and a radiation surface of the ultrasound on the ultrasound transducer. The mask portion is configured to: mask any divided region among a plurality of divided regions obtained by dividing an elevation direction orthogonal to a plane parallel to a scanning direction of the ultrasound; reflect the ultrasound in a direction different from a propagation direction of the ultrasound on the masked division region; and allow the ultrasound to pass in the propagation direction in the plurality of divided regions except the masked divided region.

公开(公告)号：US09860648B2

公开(公告)日：2018-01-02

申请号：US14611935

申请日：2015-02-02

申请人： Kari Pahkala ,  Matti Kujala

发明人： Kari Pahkala ,  Matti Kujala

IPC分类号： H04R25/00 ,  H04R19/00 ,  B66B3/00 ,  H04R19/02 ,  H04R1/02 ,  H04R27/02

CPC分类号： H04R19/00 ,  B66B3/00 ,  B66B3/006 ,  H04R1/023 ,  H04R1/028 ,  H04R19/02 ,  H04R27/02 ,  H04R2201/021

摘要： Improvement to a sound system for an elevator system and method for implementing the sound system for an elevator. The elevator sound system is improved by replacing at least one loudspeaker to be used in the sound system with a plate-like electrostatic actuator producing a directed sound field. The patent application also contains an independent claim for a method for implementing a sound system for an elevator.

公开(公告)号：US20170370768A1

公开(公告)日：2017-12-28

申请号：US15542746

申请日：2016-01-11

申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS

发明人： Didem OZEVIN ,  Hossain SABOONCHI

IPC分类号： G01H11/06 ,  H04R7/02 ,  H04R19/00 ,  H04R31/00

CPC分类号： G01H11/06 ,  H04R7/02 ,  H04R19/00 ,  H04R19/005 ,  H04R31/00 ,  H04R2201/003

摘要： Acoustic emission (AE) microelectromechanical system (MEMS) transducers of the present disclosure utilize a spring-mass system and a capacitance-change transduction principle. The transducers include a dielectric layer between a fixed electrode and a moveable metal layer to reduce the stiction failure. The moveable metal layer may displace in a particular direction when interacting with elastic waves. Additionally, the moveable metal layer may be formed using an electroplating technique. In some embodiments, multiple spring-mass unit cells may be combined in parallel to increase the sensitivity of the transducer.

公开(公告)号：US09826313B2

公开(公告)日：2017-11-21

申请号：US14717715

申请日：2015-05-20

申请人： Clean Energy Labs, LLC

发明人： Joseph F. Pinkerton ,  William Neil Everett ,  William Martin Lackowski ,  David A. Badger

IPC分类号： H04R9/02 ,  H04R19/00 ,  H04R19/01 ,  H04R19/02 ,  H04R1/26 ,  H04R1/28 ,  H04R1/34 ,  H04R1/40 ,  H04R7/02 ,  H04R1/02 ,  H04R3/06 ,  H04R7/04 ,  H04R31/00 ,  H02M7/487

CPC分类号： H04R9/022 ,  H02M7/487 ,  H04R1/02 ,  H04R1/26 ,  H04R1/2896 ,  H04R1/345 ,  H04R1/403 ,  H04R3/06 ,  H04R7/02 ,  H04R7/04 ,  H04R19/00 ,  H04R19/005 ,  H04R19/01 ,  H04R19/013 ,  H04R19/02 ,  H04R31/003 ,  H04R2201/003 ,  H04R2307/023 ,  H04R2307/025

摘要： An improved compact electroacoustic transducer and loudspeaker system. The electroacoustic transducer (or array of electroacoustic transducers) can generate the desired sound by the use of pressurized airflow. The electroacoustic transducer uses a shared stator with an array of vent support fingers and metal frame instead of two stators per electroacoustic transducer.

公开(公告)号：US20170332178A1

公开(公告)日：2017-11-16

申请号：US15665941

申请日：2017-08-01

申请人： Cirrus Logic International Semiconductor Ltd.

发明人： Anthony Bernard Traynor ,  Richard Ian Laming ,  Tsjerk H. Hoekstra

IPC分类号： H04R19/04 ,  B81B3/00 ,  H04R19/00 ,  H04R31/00 ,  H01L27/00 ,  H04R23/00

CPC分类号： H04R19/04 ,  B81B3/0021 ,  B81B3/0072 ,  B81B3/0094 ,  B81B2201/00 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  H01L27/00 ,  H04R19/00 ,  H04R19/005 ,  H04R23/00 ,  H04R31/00 ,  H04R2499/11

摘要： A method of fabricating a micro-electrical-mechanical system (MEMS) transducer comprises the steps of forming a membrane on a substrate, and forming a back-volume in the substrate. The step of forming a back-volume in the substrate comprises the steps of forming a first back-volume portion and a second back-volume portion, the first back-volume portion being separated from the second back-volume portion by a step in a sidewall of the back-volume. The cross-sectional area of the second back-volume portion can be made greater than the cross-sectional area of the membrane, thereby enabling the back-volume to be increased without being constrained by the cross-sectional area of the membrane. The back-volume may comprise a third back-volume portion. The third back-volume portion enables the effective diameter of the membrane to be formed more accurately.

公开(公告)号：US09815685B2

公开(公告)日：2017-11-14

申请号：US14739419

申请日：2015-06-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Yi-Hsien Chang ,  Chun-Wen Cheng ,  Chun-Ren Cheng ,  Shih-Wei Lin ,  Wei-Cheng Shen

IPC分类号： H01L29/84 ,  B81B3/00 ,  B81C1/00 ,  H04R19/00

CPC分类号： B81B3/001 ,  B81B2201/0257 ,  B81B2207/015 ,  B81C1/00182 ,  H04R19/00 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

摘要： A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures, a membrane disposed opposite to the plate and including a plurality of corrugations facing the plurality of apertures, and a conductive plug extending from the plate through the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate is an epitaxial (EPI) silicon layer or a silicon-on-insulator (SOI) substrate.