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    Method for producing sealed optical semiconductor device
    5.
    发明授权
    Method for producing sealed optical semiconductor device 有权

    公开(公告)号：US11257992B2

    公开(公告)日：2022-02-22

    申请号：US16637531

    申请日：2018-08-31

    申请人： Dow Corning Toray Co., Ltd. ,  Dow Silicones Corporation

    发明人： Eiji Kitaura ,  Masaaki Amako ,  Steven Swier

    IPC分类号： H01L33/52 ,  H01L33/50

    摘要： A method for producing a sealed optical semiconductor device includes: placing inner and outermost layer sealing films on a substrate on which an optical semiconductor element is mounted within a pressure reduction chamber, and reducing the pressure; a step in which the outermost film is heated, and at least the periphery of the outermost film is thermally fused to the surface of the substrate; and a step in which the reduction of pressure is released, and the substrate is sealed by the outermost film and the inner film. The temperature T2 of the substrate when the reduction of pressure is released is a temperature at which the outermost film exhibits a tensile strength of 0.02-0.15 MPa and an elongation at break of 200-450%. The inner film exhibits a loss tangent (tan δ) of 1.6 or more at the temperature T2.

    Method for producing sealed optical semiconductor device
    6.
    发明授权
    Method for producing sealed optical semiconductor device 有权

    公开(公告)号：US11139419B2

    公开(公告)日：2021-10-05

    申请号：US16634808

    申请日：2018-08-31

    申请人： Dow Corning Toray Co., Ltd. ,  Dow Silicones Corporation

    发明人： Eiji Kitaura ,  Masaaki Amako ,  Steven Swier

    IPC分类号： H01L33/52 ,  H01L33/56

    摘要： A method for producing a sealed optical semiconductor device makes it possible to seal an optical semiconductor element using a sealing film. The method includes: placing a sealing film on an optical semiconductor element substrate on which an optical semiconductor element is placed within a pressure reduction chamber, and the pressure within the chamber is reduced; heating the film where at least the periphery of the film is thermally fused to the surface of the optical semiconductor element placement substrate; and a step in which the reduction of pressure within the chamber is released and the optical semiconductor element placement substrate is sealed by the film. The temperature T2 of the optical semiconductor element placement substrate when the reduction of pressure within the chamber is released is a temperature at which the film exhibits a tensile strength of 0.02-0.15 MPa and an elongation at break of 150-450%.

    METHOD FOR PRODUCING SEALED OPTICAL SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD FOR PRODUCING SEALED OPTICAL SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200373457A1

    公开(公告)日：2020-11-26

    申请号：US16634808

    申请日：2018-08-31

    申请人： Dow Corning Toray Co., Ltd. ,  Dow Silicones Corporation

    发明人： Eiji Kitaura ,  Masaaki Amako ,  Steven Swier

    IPC分类号： H01L33/00 ,  H01L33/56 ,  H01L33/58 ,  H01L33/54

    摘要： A method for producing a sealed optical semiconductor device makes it possible to seal an optical semiconductor element using a sealing film. The method includes: placing a sealing film on an optical semiconductor element substrate on which an optical semiconductor element is placed within a pressure reduction chamber, and the pressure within the chamber is reduced; heating the film where at least the periphery of the film is thermally fused to the surface of the optical semiconductor element placement substrate; and a step in which the reduction of pressure within the chamber is released and the optical semiconductor element placement substrate is sealed by the film. The temperature T2 of the optical semiconductor element placement substrate when the reduction of pressure within the chamber is released is a temperature at which the film exhibits a tensile strength of 0.02-0.15 MPa and an elongation at break of 150-450%.

    METHOD FOR PRODUCING SEALED OPTICAL SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD FOR PRODUCING SEALED OPTICAL SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200220055A1

    公开(公告)日：2020-07-09

    申请号：US16637531

    申请日：2018-08-31

    申请人： Dow Corning Toray Co., Ltd. ,  Dow Silicones Corporation

    发明人： Eiji Kitaura ,  Masaaki Amako ,  Steven Swier

    IPC分类号： H01L33/52 ,  H01L33/50

    摘要： A method for producing a sealed optical semiconductor device includes: placing inner and outermost layer sealing films on a substrate on which an optical semiconductor element is mounted within a pressure reduction chamber, and reducing the pressure; a step in which the outermost film is heated, and at least the periphery of the outermost film is thermally fused to the surface of the substrate; and a step in which the reduction of pressure is released, and the substrate is sealed by the outermost film and the inner film. The temperature T2 of the substrate when the reduction of pressure is released is a temperature at which the outermost film exhibits a tensile strength of 0.02-0.15 MPa and an elongation at break of 200-450%. The inner film exhibits a loss tangent (tan δ) of 1.6 or more at the temperature T2.