公开(公告)号：US20170230030A1

公开(公告)日：2017-08-10

申请号：US15497146

申请日：2017-04-25

申请人： SiTime Coporation

发明人： Joseph C. Doll ,  Nicholas Miller ,  Charles I. Grosjean ,  Paul M. Hagelin ,  Ginel C. Hill

IPC分类号： H03H9/125

CPC分类号： H03H9/125 ,  H03H3/0077 ,  H03H9/02259 ,  H03H9/02401 ,  H03H9/02448 ,  H03H9/1057 ,  H03H9/17 ,  H03H9/2463 ,  H03H2003/027 ,  H03H2009/02181 ,  H03H2009/02307 ,  H03H2009/155

摘要： A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

公开(公告)号：US08461941B2

公开(公告)日：2013-06-11

申请号：US12523299

申请日：2008-01-15

申请人： Didier Belot ,  Andréia Cathelin ,  Yann Deval ,  Moustapha El Hassan ,  Eric Kerherve ,  Alexandre Shirakawa

发明人： Didier Belot ,  Andréia Cathelin ,  Yann Deval ,  Moustapha El Hassan ,  Eric Kerherve ,  Alexandre Shirakawa

IPC分类号： H03H9/15 ,  H03H9/54 ,  H03H3/04

CPC分类号： H03H9/172 ,  H03H9/0547 ,  H03H2003/0428 ,  H03H2009/02181 ,  H03H2009/241

摘要： A bulk acoustic wave resonator has an adjustable resonance frequency. A piezoelectric element is provided having first and second electrodes. A switching element is provided in the form of a MEMS structure which is deformable between a first and second position. The switching element forms an additional electrode that is selectively disposed on top of, and in contact with, one of the first and second electrodes. This causes a total thickness of the electrode of the resonator to be changed resulting in a modification of the resonance frequency of the resonator.

摘要翻译： 体声波谐振器具有可调节的共振频率。 提供具有第一和第二电极的压电元件。 开关元件以MEMS结构的形式提供，其可在第一和第二位置之间变形。 开关元件形成附加电极，其被选择性地设置在第一和第二电极中的一个的顶部并与之接触。 这导致谐振器的电极的总厚度变化，导致谐振器的谐振频率的改变。

公开(公告)号：US20170309811A1

公开(公告)日：2017-10-26

申请号：US15641470

申请日：2017-07-05

申请人： Murata Manufacturing CO., Ltd.

发明人： KANSHO YAMAMOTO ,  Takuo Hada

IPC分类号： H01L41/29 ,  H01L41/338 ,  H01L41/332 ,  H05B3/03 ,  H01L41/08

CPC分类号： H01L41/29 ,  H01L41/0805 ,  H01L41/09 ,  H01L41/113 ,  H01L41/23 ,  H01L41/253 ,  H01L41/314 ,  H01L41/332 ,  H01L41/338 ,  H01L41/39 ,  H03H3/02 ,  H03H9/174 ,  H03H9/583 ,  H03H2003/0414 ,  H03H2009/02181 ,  H05B3/03 ,  H05B3/26

摘要： A method for manufacturing a piezoelectric device that includes a substrate, a piezoelectric layer directly or indirectly supported by the substrate and arranged above the substrate, a heater, and a heater electrode for driving the heater. Moreover, the method includes forming the piezoelectric layer, the heater, and the heater electrode and subjecting the piezoelectric device to heat treatment with heat generated from the heater by driving the heater by feeding electric power to the heater electrode.

公开(公告)号：US20100060386A1

公开(公告)日：2010-03-11

申请号：US12523299

申请日：2008-01-15

申请人： Didier Belot ,  Andrea Cathelin ,  Yann Deval ,  Moustapha El Hassan ,  Eric Kerherve ,  Alexandre Shirakawa

发明人： Didier Belot ,  Andrea Cathelin ,  Yann Deval ,  Moustapha El Hassan ,  Eric Kerherve ,  Alexandre Shirakawa

IPC分类号： H03H9/17

CPC分类号： H03H9/172 ,  H03H9/0547 ,  H03H2003/0428 ,  H03H2009/02181 ,  H03H2009/241

摘要： A bulk acoustic wave resonator has an adjustable resonance frequency. A piezoelectric element is provided having first and second electrodes. A switching element is provided in the form of a MEMS structure which is deformable between a first and second position. The switching element forms an additional electrode that is selectively disposed on top of, and in contact with, one of the first and second electrodes. This causes a total thickness of the electrode of the resonator to be changed resulting in a modification of the resonance frequency of the resonator.

摘要翻译： 体声波谐振器具有可调节的共振频率。 提供具有第一和第二电极的压电元件。 开关元件以MEMS结构的形式提供，其可在第一和第二位置之间变形。 开关元件形成附加电极，其被选择性地设置在第一和第二电极中的一个的顶部并与之接触。 这导致谐振器的电极的总厚度变化，导致谐振器的谐振频率的改变。

公开(公告)号：US07038355B2

公开(公告)日：2006-05-02

申请号：US10814619

申请日：2004-03-31

申请人： Guillaume Bouche ,  Pascal Ancey ,  Grégory Caruyer

发明人： Guillaume Bouche ,  Pascal Ancey ,  Grégory Caruyer

IPC分类号： H02N2/00 ,  H01L41/00

CPC分类号： B81B3/0078 ,  B81B2201/0271 ,  B81B2201/032 ,  B81B2203/0109 ,  H01G5/16 ,  H03H9/172 ,  H03H2009/02181

摘要： A device comprising a resonator formed of a piezoelectric layer sandwiched between two metal electrodes, the resonator being laid on a suspended beam, the device comprising means for deforming said beam by the difference in thermal expansion coefficients.

摘要翻译： 一种包括由夹在两个金属电极之间的压电层形成的谐振器的装置，所述谐振器被放置在悬挂梁上，所述装置包括用于使所述光束变形所述热膨胀系数差的装置。

公开(公告)号：US11916534B2

公开(公告)日：2024-02-27

申请号：US17847438

申请日：2022-06-23

申请人： SiTime Coporation

发明人： Joseph C. Doll ,  Nicholas Miller ,  Charles I. Grosjean ,  Paul M. Hagelin ,  Ginel C. Hill

IPC分类号： H03H9/125 ,  H03H3/007 ,  H03H9/02 ,  H03H9/10 ,  H03H9/24 ,  H03H9/17 ,  H03H3/02 ,  H03H9/15

CPC分类号： H03H9/125 ,  H03H3/0077 ,  H03H9/02259 ,  H03H9/02401 ,  H03H9/02448 ,  H03H9/1057 ,  H03H9/17 ,  H03H9/2463 ,  H03H2003/027 ,  H03H2009/02181 ,  H03H2009/02307 ,  H03H2009/155

摘要： A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

公开(公告)号：US09646874B1

公开(公告)日：2017-05-09

申请号：US13959136

申请日：2013-08-05

申请人： Sandia Corporation

发明人： Kenneth Wojciechowski ,  Roy H. Olsson ,  Peggy J. Clews ,  Todd Bauer

IPC分类号： H01L21/00 ,  H01L21/764 ,  H01L29/06 ,  H01L21/762

CPC分类号： H01L21/823481 ,  B81C1/00 ,  H01L21/02178 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/764 ,  H01L21/84 ,  H01L23/34 ,  H01L27/12 ,  H01L29/0649 ,  H03H3/02 ,  H03H2009/02181

摘要： Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

公开(公告)号：US5587620A

公开(公告)日：1996-12-24

申请号：US171227

申请日：1993-12-21

申请人： Richard C. Ruby ,  Paul P. Merchant

发明人： Richard C. Ruby ,  Paul P. Merchant

IPC分类号： H03H3/04 ,  H03H9/02 ,  H03H9/17 ,  H03H9/58 ,  H01L41/08

CPC分类号： H03H9/174 ,  H03H3/04 ,  H03H9/02133 ,  H03H9/02236 ,  H03H9/583 ,  H03H9/588 ,  H03H2009/02181 ,  Y10T29/42

摘要： An acoustical resonator comprising top and bottom electrodes that sandwich a PZ layer. The resonance frequency of the acoustical resonator may be adjusted after fabrication by utilizing heating elements included in the acoustical resonator and/or by adjusting the thickness of a tuning layer. In the preferred embodiment of the present invention, the electrodes comprise Mo layers. One embodiment of the present invention is constructed on a Si.sub.3 N.sub.4 membrane. A second embodiment of the present invention is constructed such that it is suspended over a substrate on metallic columns. In the preferred embodiment of the present invention, the electrodes are deposited by a method that minimizes the stress in the electrodes.

摘要翻译： 包括夹着PZ层的顶部和底部电极的声学谐振器。 可以通过利用声谐振器中包含的加热元件和/或通过调节调谐层的厚度来调整声学谐振器的共振频率。 在本发明的优选实施例中，电极包括Mo层。 本发明的一个实施方案构造在Si 3 N 4膜上。 本发明的第二实施例构造成使得其悬挂在金属柱上的基板上。 在本发明的优选实施例中，通过使电极中的应力最小化的方法来沉积电极。

公开(公告)号：US11677379B2

公开(公告)日：2023-06-13

申请号：US17544120

申请日：2021-12-07

申请人： SiTime Coporation

发明人： Joseph C. Doll ,  Nicholas Miller ,  Charles I. Grosjean ,  Paul M. Hagelin ,  Ginel C. Hill

IPC分类号： H03H9/125 ,  H03H3/007 ,  H03H9/02 ,  H03H9/10 ,  H03H9/24 ,  H03H9/17 ,  H03H3/02 ,  H03H9/15

CPC分类号： H03H9/125 ,  H03H3/0077 ,  H03H9/02259 ,  H03H9/02401 ,  H03H9/02448 ,  H03H9/1057 ,  H03H9/17 ,  H03H9/2463 ,  H03H2003/027 ,  H03H2009/02181 ,  H03H2009/02307 ,  H03H2009/155

摘要： A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

公开(公告)号：US09824932B1

公开(公告)日：2017-11-21

申请号：US15234932

申请日：2016-08-11

申请人： Sandia Corporation

发明人： Kenneth Wojciechowski ,  Roy Olsson ,  Peggy J. Clews ,  Todd Bauer

IPC分类号： H01L21/02 ,  B81C1/00 ,  B81B7/00 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/306 ,  H01L21/84 ,  H01L21/762 ,  H01L21/3213 ,  H01L21/764 ,  H01L23/34 ,  H01L21/48 ,  H01L41/047

CPC分类号： H01L21/823481 ,  B81C1/00 ,  H01L21/02178 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/764 ,  H01L21/84 ,  H01L23/34 ,  H01L27/12 ,  H01L29/0649 ,  H03H3/02 ,  H03H2009/02181

摘要： Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.