公开(公告)号：US20240288683A1

公开(公告)日：2024-08-29

申请号：US18571532

申请日：2022-06-21

Applicant: OQMENTED GMBH

Inventor： Ulrich HOFMANN ,  Fabian SCHWARZ ,  Thomas VON WANTOCH

IPC: G02B26/10 ,  B81B3/00 ,  G02B26/08

CPC classification number: G02B26/105 ,  B81B3/0043 ,  G02B26/0833 ,  B81B2201/032 ,  B81B2201/042 ,  B81B2203/0163 ,  B81B2203/058

Abstract: A microscanner for projecting electromagnetic radiation onto an observation field comprises: a deflection element having a mirror surface designed as a micromirror for deflecting an incident electromagnetic beam; a support structure that surrounds the deflection element at least in some sections; and a spring device having a plurality of springs. By means of the springs, the deflection element is suspended on the support structure in an oscillating manner in such a way that it can simultaneously carry out a first rotational oscillation around a first oscillation axis and a second rotational oscillation around a second oscillation axis orthogonal thereto relative to the support structure, in order to be able to effectuate a Lissajous projection in an observation field by reflection of an electromagnetic beam incident on the deflection element during the simultaneous oscillations. At least one of the springs comprises a spring section which is designed as a meander spring having a sequence of two or more meanders which follow one another along its longitudinal direction and extend transversely thereto. The spring section is arranged within a space between the deflection element and the support structure and is guided with its longitudinal direction along a line which deviates from a radial direction in relation to the geometric center point of the micromirror.

公开(公告)号：US11953813B2

公开(公告)日：2024-04-09

申请号：US18134671

申请日：2023-04-14

Applicant: STMicroelectronics S.r.l.

Inventor： Nicolo' Boni ,  Roberto Carminati ,  Massimiliano Merli

IPC: G02B26/08 ,  B81B3/00 ,  G02B26/10 ,  G03B21/00 ,  G03B21/28

CPC classification number: G03B21/008 ,  B81B3/0021 ,  G02B26/0858 ,  G02B26/105 ,  G03B21/28 ,  B81B2201/032 ,  B81B2201/042 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058

Abstract: Disclosed herein is a microelectromechanical device that features a fixed structure defining a cavity, a tiltable structure elastically suspended within the cavity, and a piezoelectrically driven actuation structure that rotates the tiltable structure about a first rotation axis. The actuation structure includes driving arms with piezoelectric material, elastically coupled to the tiltable structure by decoupling elastic elements that are stiff to out-of-plane movements but compliant to torsional movements. The tiltable structure is elastically coupled to the fixed structure at the first rotation axis using elastic suspension elements, while the fixed structure forms a frame surrounding the cavity with supporting elements. A lever mechanism is coupled between a supporting element and a driving arm.

公开(公告)号：US11847851B2

公开(公告)日：2023-12-19

申请号：US17675832

申请日：2022-02-18

Applicant: INVENSENSE, INC.

Inventor： Julius Ming-Lin Tsai ,  Mike Daneman ,  Sanjiv Kapoor

IPC: B06B1/06 ,  B81B7/00 ,  G06V40/13 ,  B81C1/00 ,  G01H11/08

CPC classification number: G06V40/1306 ,  B06B1/067 ,  B06B1/0666 ,  B81B7/007 ,  B81C1/00238 ,  B81C1/00246 ,  B81C1/00301 ,  G01H11/08 ,  B06B2201/70 ,  B81B2201/0271 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2207/012 ,  B81B2207/015 ,  B81C2201/0105 ,  B81C2201/0109 ,  B81C2203/035 ,  B81C2203/036 ,  B81C2203/0792

Abstract: Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

公开(公告)号：US20230320222A1

公开(公告)日：2023-10-05

申请号：US18329975

申请日：2023-06-06

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Domenico GIUSTI ,  Carlo Luigi PRELINI

IPC: H10N30/20 ,  B81B3/00

CPC classification number: H10N30/2042 ,  B81B3/0018 ,  B81B3/0072 ,  B81B2201/032

Abstract: A MEMS device having a body with a first and a second surface, a first portion and a second portion. The MEMS device further has a cavity extending in the body from the second surface; a deformable portion between the first surface and the cavity; and a piezoelectric actuator arranged on the first surface, on the deformable portion. The deformable portion has a first region with a first thickness and a second region with a second thickness greater than the first thickness. The second region is adjacent to the first region and to the first portion of the body.

公开(公告)号：US11770972B2

公开(公告)日：2023-09-26

申请号：US16940597

申请日：2020-07-28

Applicant: The Hong Kong University of Science and Technology

Inventor： Benzhong Tang ,  Haoran Wang ,  Hao Xing

IPC: C07D263/57 ,  H10K85/60 ,  C09K11/06 ,  B81B3/00

CPC classification number: H10K85/657 ,  B81B3/0029 ,  C07D263/57 ,  C09K11/06 ,  B81B2201/032 ,  C09K2211/1007 ,  C09K2211/1018

Abstract: Provided herein are multifunctional photoresponsive compositions that can undergo conversion from an aggregation-caused quenching (ACQ) state to an aggregation-induced emission (AIE) state and macroscopic actuation and systems comprising the same and methods of use thereof.

公开(公告)号：US11656539B2

公开(公告)日：2023-05-23

申请号：US16704484

申请日：2019-12-05

Applicant: STMicroelectronics S.r.l.

Inventor： Nicolo′ Boni ,  Roberto Carminati ,  Massimiliano Merli

IPC: G02B26/08 ,  G03B21/00 ,  B81B3/00 ,  G02B26/10 ,  G03B21/28

CPC classification number: G03B21/008 ,  B81B3/0021 ,  G02B26/0858 ,  G02B26/105 ,  G03B21/28 ,  B81B2201/032 ,  B81B2201/042 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058

Abstract: A microelectromechanical device includes a fixed structure defining a cavity with a tiltable structure that is elastically suspended in the cavity. A piezoelectrically driven actuation structure, interposed between the tiltable structure and the fixed structure, is biased for causing rotation of the tiltable structure about a first rotation axis belonging to a horizontal plane in which the tiltable structure rests. The actuation structure includes a pair of driving arms carry respective regions of piezoelectric material and are elastically coupled to the tiltable structure on opposite sides of the first rotation axis through respective elastic decoupling elements. The elastic decoupling elements exhibit stiffness in regard to movements out of the horizontal plane and compliance to torsion about the first rotation axis.

公开(公告)号：US20180010589A1

公开(公告)日：2018-01-11

申请号：US15712458

申请日：2017-09-22

Applicant: Innovative Micro Technology

Inventor： Benedikt ZEYEN

IPC: F04B19/00 ,  F04B43/04 ,  F04B17/00

CPC classification number: F04B19/006 ,  B81B3/0021 ,  B81B2201/0264 ,  B81B2201/032 ,  B81B2201/036 ,  B81C1/00182 ,  F04B17/003 ,  F04B43/043 ,  G01L9/0042 ,  G01L9/0054

Abstract: A microfabricated fluid pump is formed in a multilayer substrate by etching a plurality of shallow and deep wells into the layers, and then joining these wells with voids formed by anisotropic etching. The voids define a flexible membrane over the substrate which deforms when a force is applied. The force may be provided by an embedded layer of piezoelectric material. Embedded strain gauges may allow self-sensing and convenient, precise operational control.

公开(公告)号：US09624094B1

公开(公告)日：2017-04-18

申请号：US15088557

申请日：2016-04-01

Applicant: Cypress Semiconductor Corporation

Inventor： Shan Sun ,  Ali Keshavarzi ,  Thomas Davenport ,  Thurman John Rodgers

IPC: B81B7/00

CPC classification number: B81B7/007 ,  B81B7/0025 ,  B81B2201/0292 ,  B81B2201/032 ,  B81B2207/07 ,  B81B2207/097 ,  H01L28/57 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A microelectronic system including hydrogen barriers and copper pillars for wafer level packaging and method of fabricating the same are provided. Generally, the method includes: forming an insulating hydrogen barrier over a surface of a first chip; exposing at least a portion of an electrical contact electrically coupled to a component in the first chip by removing a portion of the insulating hydrogen barrier, the component including a material susceptible to degradation by hydrogen; forming a conducting hydrogen barrier over at least the exposed portion of the electrical contact; and forming a copper pillar over the conducting hydrogen barrier. In one embodiment, the material susceptible to degradation is lead zirconate titanate (PZT) and the microelectronic systems device is a ferroelectric random access memory including a ferroelectric capacitor with a PZT ferroelectric layer. Other embodiments are also disclosed.

公开(公告)号：US09612040B2

公开(公告)日：2017-04-04

申请号：US14362285

申请日：2012-11-29

Applicant: Commissariat à l'énergie atomique et aux énergies alternatives

Inventor： Fabrice Casset

IPC: F24J3/00 ,  F03G7/06 ,  B81B3/00 ,  H02N2/18 ,  H01L41/113

CPC classification number: F24V99/00 ,  B81B3/0024 ,  B81B3/0081 ,  B81B2201/0271 ,  B81B2201/031 ,  B81B2201/032 ,  F03G7/06 ,  H01L41/1136 ,  H02N2/18

Abstract: A device for generating a second temperature variation ΔT2 from a first use temperature variation ΔT1, includes an elastocaloric material layer, having an internal temperature which is able to vary by ΔT2 in response to a given mechanical stress variation Δσ applied to the elastocaloric material layer. The variation Δσ being induced by the first use temperature variation ΔT1 There is a suspended element in mechanical contact with the elastocaloric material layer so as to apply to this layer a mechanical stress that varies in response to the use temperature variation ΔT1. The suspended element is arranged so as to make the mechanical stress applied to the elastocaloric material layer vary by Δσ in response to the temperature variation ΔT1, to generate the second temperature variation ΔT2.

公开(公告)号：US20170022054A1

公开(公告)日：2017-01-26

申请号：US15291599

申请日：2016-10-12

Applicant: INVENSENSE, INC.

Inventor： Julius Ming-Lin Tsai ,  Michael J. Daneman

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B7/007 ,  B81B3/0029 ,  B81B2201/032 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00182 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0792

Abstract: A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

Abstract translation: 公开了一种微机电系统装置。 微机械系统装置包括第一硅衬底，其包括：手柄层，包括第一表面和第二表面，所述第二表面包括空腔; 沉积在手柄层的第二表面上的绝缘层; 具有结合到绝缘层的第三表面和第四表面的器件层; 沉积在器件层的第四表面上的压电层; 设置在所述压电层上的金属导电层; 设置在所述金属导电层的一部分上的接合层; 以及在所述第一硅衬底上形成的间隔件; 其中所述第一硅衬底接合到第二硅衬底，包括：金属电极，被配置为在所述第一硅衬底上形成的所述金属传导层与所述第二硅衬底之间形成电连接。