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    Bonded wafer structure and method of fabrication
    3.
    发明授权
    Bonded wafer structure and method of fabrication 失效
    粘合晶片结构和制造方法

    公开(公告)号：US08102044B2

    公开(公告)日：2012-01-24

    申请号：US12254536

    申请日：2008-10-20

    Applicant: Richard C. Ruby ,  James P. Roland ,  Frank S. Geefay

    Inventor： Richard C. Ruby ,  James P. Roland ,  Frank S. Geefay

    IPC: H01L23/12 ,  H01L21/00

    CPC classification number: H03H9/0547 ,  B81B2201/0271 ,  B81C1/00333 ,  B81C2203/0118 ,  B81C2203/032 ,  H01L21/187 ,  H01L23/10 ,  H01L2924/0002 ,  H03H9/1014 ,  H01L2924/00

    Abstract: A method of packaging electronics comprises providing a first wafer and providing a second wafer. The method also comprises depositing a polymer material over a surface of the first wafer; and selectively removing a portion of the polymer from the first wafer to create a void in the polymer. The method also comprises placing the first wafer over the second wafer and in contact with the polymer; and curing the polymer to bond the first wafer to the second wafer. A bonded wafer structure is also described.

    Abstract translation: 包装电子器件的方法包括提供第一晶片并提供第二晶片。 该方法还包括在第一晶片的表面上沉积聚合物材料; 并且从第一晶片选择性地去除聚合物的一部分以在聚合物中产生空隙。 该方法还包括将第一晶片放置在第二晶片上并与聚合物接触; 并固化聚合物以将第一晶片结合到第二晶片。 还描述了接合晶片结构。

    RESONATOR DEVICE INCLUDING ELECTRODE WITH BURIED TEMPERATURE COMPENSATING LAYER
    5.
    发明申请
    RESONATOR DEVICE INCLUDING ELECTRODE WITH BURIED TEMPERATURE COMPENSATING LAYER 有权
    包含电极的谐振器装置，带有温度补偿层

    公开(公告)号：US20110266925A1

    公开(公告)日：2011-11-03

    申请号：US12769791

    申请日：2010-04-29

    Applicant: Richard C. RUBY ,  Wei PANG ,  Qiang ZOU ,  Donald LEE

    Inventor： Richard C. RUBY ,  Wei PANG ,  Qiang ZOU ,  Donald LEE

    IPC: H01L41/04

    CPC classification number: H03H9/131 ,  H03H3/04 ,  H03H9/02102 ,  H03H9/173 ,  H03H9/175

    Abstract: An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.

    Abstract translation: 声谐振器装置包括在基板上的复合第一电极，复合电极上的压电层和压电层上的第二电极。 第一电极包括具有正温度系数的掩埋温度补偿层。 压电层具有负温度系数，因此温度补偿层的正温度系数抵消压电层的负温度系数的至少一部分。

    BULK ACOUSTIC RESONATOR STRUCTURE COMPRISING HYBRID ELECTRODES
    6.
    发明申请
    BULK ACOUSTIC RESONATOR STRUCTURE COMPRISING HYBRID ELECTRODES 有权
    包含混合电极的大容量声学谐振器结构

    公开(公告)号：US20110237204A1

    公开(公告)日：2011-09-29

    申请号：US12748640

    申请日：2010-03-29

    Applicant: Tiberiu Jamneala ,  Richard C. Ruby

    Inventor： Tiberiu Jamneala ,  Richard C. Ruby

    IPC: H04B1/38 ,  H03H9/205

    CPC classification number: H03H9/584 ,  H03H9/587 ,  H03H9/589

    Abstract: In accordance with a representative embodiment, a BAW resonator structure, comprises a first BAW resonator, comprising: a first lower electrode having a first electrical resistance; a first upper electrode having a second electrical resistance; and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode. The BAW resonator structure also comprises a second BAW resonator, comprising: a second lower electrode having the second electrical resistance; a second upper electrode having the first electrical resistance; and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator. The first electrical resistance is less than the second electrical resistance. An communication device comprising a coupled resonator filter (CRF) is also disclosed.

    Abstract translation: 根据代表性实施例，BAW谐振器结构包括第一BAW谐振器，包括：具有第一电阻的第一下电极; 具有第二电阻的第一上电极; 以及设置在第一下电极和第一上电极之间的第一压电层。 BAW谐振器结构还包括第二BAW谐振器，包括：具有第二电阻的第二下电极; 具有第一电阻的第二上电极; 以及设置在第二下电极和第二上电极之间的第二压电层。 BAW谐振器结构还包括设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层。 第一电阻小于第二电阻。 还公开了一种包括耦合谐振滤波器（CRF）的通信设备。

    METHOD OF MANUFACTURING VERTICALLY SEPARATED ACOUSTIC FILTERS AND RESONATORS
    7.
    发明申请
    METHOD OF MANUFACTURING VERTICALLY SEPARATED ACOUSTIC FILTERS AND RESONATORS 审中-公开
    制造垂直分离式声学滤波器和谐振器的方法

    公开(公告)号：US20110047783A1

    公开(公告)日：2011-03-03

    申请号：US12942375

    申请日：2010-11-09

    Applicant: Richard C. Ruby ,  John D. Larson, III

    Inventor： Richard C. Ruby ,  John D. Larson, III

    IPC: H04R31/00

    CPC classification number: H03H9/605 ,  H03H9/587 ,  H03H9/60 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

    Abstract: An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

    Abstract translation: 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离，所以实现谐振器所需的总面积减小，从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

    Film acoustically-coupled transformer
    10.
    发明授权
    Film acoustically-coupled transformer 有权
    薄膜声耦合变压器

    公开(公告)号：US07391285B2

    公开(公告)日：2008-06-24

    申请号：US10965637

    申请日：2004-10-13

    Applicant: John D. Larson, III ,  Richard C. Ruby ,  Stephen L. Ellis

    Inventor： John D. Larson, III ,  Richard C. Ruby ,  Stephen L. Ellis

    IPC: H03H9/54

    CPC classification number: H03H9/605 ,  H03H9/02102 ,  H03H9/132 ,  H03H9/175 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

    Abstract: One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.

    Abstract translation: 薄膜声耦合变压器（FACT）的一个实施例包括具有下薄膜体声波谐振器（FBAR）的解耦堆叠体声波谐振器（DSBAR），堆叠在下FBAR上的上FBAR，以及在FBAR之间，声解耦器 包括声去耦材料层。 每个FBAR具有相对的平面电极，它们之间具有压电元件。 FACT还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。 另一个实施例已经解耦了堆叠的体声波谐振器（DSBAR），每个如上所述，将第一电路互连到下FBAR，以及互连上FBAR的第二电路。 FACT提供阻抗变换，可以将单端电路与平衡电路相连，反之亦然，并将初级和次级电隔离。 一些实施例另外电平衡。

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