公开(公告)号：US20190189449A1

公开(公告)日：2019-06-20

申请号：US16330759

申请日：2017-06-02

申请人： THE JAPAN STEEL WORKS, LTD.

发明人： Ryo SHIMIZU ,  Ryosuke SATO ,  Teruaki SHIMOJI

IPC分类号： H01L21/268 ,  H01L21/677 ,  B23K26/073 ,  G01J1/42 ,  H01L21/02

CPC分类号： H01L21/268 ,  B23K26/0732 ,  G01J1/4257 ,  G09F9/00 ,  H01L21/02678 ,  H01L21/20 ,  H01L21/677 ,  H01L29/786

摘要： A laser annealing apparatus (1) according to an embodiment includes a laser oscillator (4) configured to generate a laser beam (L), a floating-type conveying stage (3) configured to float and convey a workpiece (W) to be irradiated with the laser beam (L), and a beam profiler (7) configured to measure a beam profile of the laser beam (L). The floating-type conveying stage (3) includes a conveying surface (3a) opposed to the workpiece (W), and a bottom surface (3b) on the side opposite to the conveying surface (3a). The beam profiler (7) is positioned below the bottom surface (3b) of the floating-type conveying stage (3). The floating-type conveying stage (3) includes a detachable part (12) in a part of it. An opening (S) is formed by detaching the detachable part (12) from the floating-type conveying stage (3), the opening (3) extending from the conveying surface (3a) to the bottom surface (3b). The beam profiler (7) is configured to measure the beam profile of the laser beam (L) through the opening (S).

公开(公告)号：US10020194B2

公开(公告)日：2018-07-10

申请号：US14761998

申请日：2014-12-29

申请人： BOE Technology Group Co., Ltd.

发明人： Xueyan Tian

IPC分类号： H01L21/02 ,  H01L21/268 ,  B23K26/00 ,  H01L21/67 ,  H01L27/12 ,  B23K26/12 ,  B23K26/066

CPC分类号： H01L21/02686 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/127 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/02678 ,  H01L21/0268 ,  H01L21/02683 ,  H01L21/268 ,  H01L21/67115 ,  H01L27/1274 ,  H01L27/1285

摘要： The invention relates to the field of laser annealing, and discloses a laser annealing device, a production process of a polycrystalline silicon thin film, and a polycrystalline silicon thin film produced by the same. The laser annealing device comprises an annealing chamber, in which a laser generator is provided, wherein an annealing window, through which the laser passes, and two light-cutting plates oppositely provided above the annealing window are also provided in the annealing chamber, wherein the light-cutting end face of each of the light-cutting plates is a wedge-shaped end face. In technical solutions of the invention, since the light-cutting end face is a wedge-shaped end face, the included angle formed by the reflected beam, which is formed by the reflection of the incident beam arriving at the light-cutting end face, and the ingoing beam, which passes through the annealing window, is relatively large, and the vibrating directions of them differ relatively greatly. Hence, the phenomenon of interference will hardly occur, and thus the interference mura generated on the polycrystalline silicon thin film due to the interference is reduced, the quality of the polycrystalline silicon thin film is improved, and the percent of pass of the product is also increased.

公开(公告)号：US20180151360A1

公开(公告)日：2018-05-31

申请号：US15696814

申请日：2017-09-06

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  ORDOS YUANSHENG OPTOELECTRONICS CO., LTD.

发明人： Jingshuai WANG

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L27/12 ,  H01L29/66 ,  G02B19/00 ,  G02B27/14 ,  B23K26/06 ,  B23K26/067 ,  B23K26/12

CPC分类号： H01L21/02678 ,  B23K26/0626 ,  B23K26/0665 ,  B23K26/0673 ,  B23K26/127 ,  B23K26/128 ,  G02B19/0019 ,  G02B19/0023 ,  G02B19/0047 ,  G02B27/14 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/67115 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/66765 ,  H01S3/225

摘要： A laser annealing apparatus, a fabrication method of a polysilicon thin film, and a fabrication method of a thin film transistor are provided. The laser annealing apparatus includes: a laser generator, an optical system and an annealing chamber. The laser generator is configured to emit a laser beam, and the laser beam is guided to the annealing chamber via the optical system. The optical system includes a beam splitter, the beam splitter decomposes the laser beam into a first beam and a second beam, an energy density of the first beam is greater than an energy density of the second beam, and the first beam and the second beam are guided into the annealing chamber for laser annealing.

公开(公告)号：US09947696B2

公开(公告)日：2018-04-17

申请号：US15393413

申请日：2016-12-29

申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.

发明人： Gaiping Lu

IPC分类号： H01L29/16 ,  H01L27/12 ,  H01L29/786 ,  H01L29/49 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/265 ,  H01L29/66

CPC分类号： H01L27/1274 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02678 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/223 ,  H01L21/26513 ,  H01L21/283 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/31144 ,  H01L21/32133 ,  H01L21/324 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/5226 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1229 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming an LTPS TFT substrate includes: Step 1: providing a substrate and depositing a buffer layer; Step 2: depositing an a-Si layer; Step 3: depositing and patterning a silicon oxide layer; Step 4: taking the silicon oxide layer as a photomask and annealing the a-Si layer with excimer laser, so that the a-Si layer crystalizes and turns into a poly-Si layer; Step 5: forming a first poly-Si region and a second poly-Si region; Step 6: defining a heavily N-doped area and a lightly N-doped area on the first and second poly-Si regions, and forming an LDD area; Step 7: depositing and patterning a gate insulating layer; Step 8: forming a first gate and a second gate; Step 9: forming via holes; and Step 10: forming a first source/drain and a second source/drain.

公开(公告)号：US09910285B2

公开(公告)日：2018-03-06

申请号：US15424316

申请日：2017-02-03

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Koichiro Tanaka ,  Tomoaki Moriwaka

IPC分类号： B23K26/00 ,  C30B30/00 ,  H01L21/30 ,  G02B27/09 ,  H01L21/268 ,  H01S3/00

CPC分类号： G02B27/0955 ,  B23K26/06 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  G02B27/09 ,  G02B27/095 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/28017 ,  H01L27/1285 ,  H01L27/3244 ,  H01L27/3295 ,  H01L33/08 ,  H01L51/5237 ,  H01L51/5246 ,  H01S3/005 ,  H01S5/4012 ,  H01S5/4025

摘要： If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.

公开(公告)号：US20170316937A1

公开(公告)日：2017-11-02

申请号：US15523611

申请日：2015-10-30

申请人： Technische Universiteit Delft

发明人： Ryoichi Ishihara ,  Michiel Van Der Zwan ,  Miki Trifunovic

IPC分类号： H01L21/02 ,  H01L29/66

CPC分类号： H01L21/02678 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02236 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02628 ,  H01L21/02675 ,  H01L21/02686 ,  H01L29/66757

摘要： Methods for low-temperature formation of one or more thin-film semiconductor structures on a substrate that include the steps of, forming a (poly)silane layer over a substrate, transforming one or more parts of the (poly)silane layer in one or more thin-film solid-state semiconductor structures, by exposing the one or more parts with light from an

公开(公告)号：US09777393B2

公开(公告)日：2017-10-03

申请号：US14415980

申请日：2013-07-15

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Lamine Benaissa

IPC分类号： C30B13/00 ,  H01L21/02 ,  C30B13/24

CPC分类号： C30B13/005 ,  C30B13/24 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  Y10T428/12674

摘要： Process for fabricating a thin single-crystalline layer n, including steps of: a) providing a support substrate n, b) placing a seed sample n, c) depositing a thin layer n so as to form an initial interface region n including a proportion of seed sample n and a proportion of thin layer n, the proportion of seed sample n decreasing from the first peripheral part n towards the second peripheral part n, e) providing an energy input to the initial interface region n contiguous to the first peripheral part n so as to liquefy a portion n of the thin layer and form a solid/liquid interface region n, and f) gradually moving the energy input away from the seed sample n so as to solidify the portion n so as to gradually move the solid/liquid interface region n.

公开(公告)号：US20170186611A1

公开(公告)日：2017-06-29

申请号：US15305588

申请日：2016-04-06

申请人： BOE TECHNOLOGY GROUP CO., LTD

发明人： DONG LI ,  XIAOYONG LU ,  SHUAI ZHANG ,  ZHENG LIU ,  CHUNPING LONG

IPC分类号： H01L21/02 ,  G02B27/09 ,  H01L29/786

CPC分类号： H01L21/02678 ,  G02B1/02 ,  G02B27/0988 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/02691 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/78672 ,  H01L29/78675 ,  H01L29/78696

摘要： In accordance with various embodiments of the disclosed subject matter, a method for forming polycrystalline silicon thin film, a related optical film, a related polycrystalline silicon thin film, and a related thin film transistor are provided. In some embodiments, the method comprises: providing an amorphous silicon thin film; and performing a laser annealing process to convert the amorphous silicon thin film into a polycrystalline silicon thin film through generating a laser irradiation having a spatially periodic intensity distribution to irradiate the amorphous silicon thin film; wherein the spatially periodic intensity distribution comprises: a first laser intensity to form a plurality of crystal nuclei regions arranged in an array, and a second laser intensity to form a plurality of epitaxial growth regions, the second laser intensity being greater than the first laser intensity.

公开(公告)号：US20160259174A1

公开(公告)日：2016-09-08

申请号：US15001544

申请日：2016-01-20

申请人： COHERENT LASERSYSTEMS GMBH & CO. KG

发明人： Frank Simon ,  Thomas Wenzel ,  Ludwig Schwenger

IPC分类号： G02B27/28 ,  B23K26/067 ,  B23K26/06

CPC分类号： G02B27/285 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0648 ,  B23K26/067 ,  B23K26/0738 ,  B23K2103/56 ,  G02B27/0905 ,  G02B27/286 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1285

摘要： In a laser line projection apparatus, six spaced-apart unpolarized laser-beams are plane-polarized with low loss by a combination of a thin-film polarizer, a reflector, and two polarization rotators. Two beams are polarized in each of three polarization-orientations. Two of the polarization-orientations are orthogonally aligned with each other in P and S orientations. The other polarization-orientation is non-orthogonally aligned in an intermediate orientation. The beams are intensity-homogenized and projected into a line of radiation. Any point on the line of radiation is formed from rays with an angular distribution of polarization-orientation from S to P through the intermediate orientation and back to S through the intermediate orientation.

摘要翻译： 在激光线投影装置中，六个间隔开的非偏振激光束通过薄膜偏振器，反射器和两个偏振旋转器的组合而具有低损耗的平面偏振。 两个光束在三个偏振取向中的每一个中极化。 两个偏振取向在P和S取向彼此正交对准。 另一种偏振取向在中间取向非正交对准。 梁被强度均匀化并投射到一条辐射线中。 辐射线上的任何点由具有从S到P通过中间取向的偏振取向的角度分布的射线形成，并且通过中间取向返回到S。

公开(公告)号：US09406515B2

公开(公告)日：2016-08-02

申请号：US14944047

申请日：2015-11-17

申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION

发明人： BoXiu Cai

IPC分类号： H01L21/268 ,  H01L21/20 ,  H01L21/263 ,  H01L21/26 ,  H01L21/324 ,  B23K26/04 ,  B23K26/073 ,  B23K26/08 ,  G02B27/09

CPC分类号： H01L21/268 ,  B23K26/04 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/0853 ,  G02B27/0922 ,  G02B27/0933 ,  G02B27/0955 ,  G02B27/0977 ,  H01L21/02678 ,  H01L21/2026 ,  H01L21/26 ,  H01L21/263 ,  H01L21/2636 ,  H01L21/324

摘要： A laser annealing device for compensating wafer heat maps and its method are disclosed. A laser annealing device comprises a pump laser source array including of a plurality of pump laser sources for irradiating a tunable mask, each pump laser source emitting pump laser, an annealing laser source for emitting annealing laser and irradiating the tunable mask, and a tunable mask for transmitting at least part of the annealing laser after being irradiated by the pump laser.

摘要翻译： 公开了一种用于补偿晶片热图的激光退火装置及其方法。 激光退火装置包括：泵激光源阵列，包括用于照射可调掩模的多个泵浦激光源，每个泵浦激光源发射泵激光器，用于发射退火激光器并照射可调掩模的退火激光源;以及可调谐掩模 用于在由泵浦激光器照射之后传送至少部分退火激光器。