- 专利标题: Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device
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申请号: US15424316申请日: 2017-02-03
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公开(公告)号: US09910285B2公开(公告)日: 2018-03-06
- 发明人: Koichiro Tanaka , Tomoaki Moriwaka
- 申请人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP2001-256130 20010827
- 主分类号: B23K26/00
- IPC分类号: B23K26/00 ; C30B30/00 ; H01L21/30 ; G02B27/09 ; H01L21/268 ; H01S3/00
摘要:
If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.
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