公开(公告)号：US5345080A

公开(公告)日：1994-09-06

申请号：US960503

申请日：1992-10-13

Applicant: Yusuke Yajima ,  Masakazu Ichikawa ,  Hiroyuki Shinada

Inventor： Yusuke Yajima ,  Masakazu Ichikawa ,  Hiroyuki Shinada

IPC: H01J37/04 ,  H01J37/09 ,  H01J37/147 ,  H01J37/20 ,  H01J37/22 ,  H01J37/26 ,  H01J37/295

CPC classification number: H01J37/26 ,  H01J37/045 ,  H01J2237/24455

Abstract: An electron microscopic image observing method and an apparatus for carrying out the same enables the observation of an electron microscopic image of a specimen by irradiating the specimen with an electron beam and detecting the electron beam after it has transmitted through the specimen. The electron beam transmitted through the specimen is deflected so that the deflection thereof varies with time, and is allowed to pass through an aperture only when the deflection thereof is within a predetermined range of deflection, whereby the electron beam transmitted through the specimen and passed through the aperture is then detected. Thus, the electron microscopic image observing method and the apparatus for carrying out the same enables the observation of time-resolved electron microscopic images of a specimen having internal physical properties varying with time.

Abstract translation: 电子显微镜图像观察方法及其执行装置能够通过用电子束照射样本来观察样品的电子显微镜图像，并且在透射通过样品之后检测电子束。 透过试样的电子束被偏转，使其挠曲随时间而变化，只有当其偏转在预定的偏转范围内时才允许通过孔，由此电子束透过试样并通过 然后检测孔径。 因此，电子显微镜图像观察方法及其执行装置能够观察具有随时间变化的内部物理性质的样品的时间分辨电子显微镜图像。

公开(公告)号：US06979823B2

公开(公告)日：2005-12-27

申请号：US10865850

申请日：2004-06-14

Applicant: Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

Inventor： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

IPC: G01N23/20 ,  G01N23/225 ,  G01Q20/02 ,  G01Q30/02 ,  G01Q30/04 ,  G01Q30/20 ,  H01J37/26 ,  H01L21/027 ,  H01L21/66 ,  H01J37/244

CPC classification number: H01J37/26 ,  G01N23/225 ,  H01J37/244 ,  H01J37/29 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/2447 ,  H01J2237/24475 ,  H01J2237/24485 ,  H01J2237/24592 ,  H01J2237/2482

Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

Abstract translation: 具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是 获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。 通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

公开(公告)号：US06172363B2

公开(公告)日：2001-01-09

申请号：US08811511

申请日：1997-03-04

Applicant: Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

Inventor： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC: H01J37244

CPC classification number: G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

公开(公告)号：US07417444B2

公开(公告)日：2008-08-26

申请号：US11269617

申请日：2005-11-09

Applicant: Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

Inventor： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC: G01R31/305 ,  H01J37/28

CPC classification number: G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

Abstract translation: 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US07242015B2

公开(公告)日：2007-07-10

申请号：US11234197

申请日：2005-09-26

Applicant: Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

Inventor： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

IPC: H01J37/153 ,  H01J37/30

CPC classification number: H01J37/26 ,  G01N23/225 ,  H01J37/244 ,  H01J37/29 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/2447 ,  H01J2237/24475 ,  H01J2237/24485 ,  H01J2237/24592 ,  H01J2237/2482

Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

Abstract translation: 具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是 获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。 通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

公开(公告)号：US07026830B2

公开(公告)日：2006-04-11

申请号：US10379555

申请日：2003-03-06

Applicant: Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

Inventor： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC: G01R31/305 ,  G01R31/28

CPC classification number: G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

Abstract: To make possible the in-line inspection of a pattern of an insulating material.A patterned wafer 40 formed with a pattern by a resist film is placed on a specimen table 21 of a patterned wafer inspection apparatus 1 in opposed relation to a SEM 3. An electron beam 10 of a large current is emitted from an electron gun 11 and the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detector 16 thereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unit 32 and a defect determining unit 33. Since an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.

Abstract translation: 使绝缘材料的图案能够在线检查。 通过抗蚀剂膜形成图案的图案化晶片40与SEM 3相对地放置在图案化晶片检查装置1的样本台21上。 从电子枪11发射大电流的电子束10，以高扫描速度扫描图案化晶片的图案一次。 通过二次电子检测器16检测来自图案化晶片的该扫描产生的二次电子，从而获得电子束图像。 使用该电子束图像，通过算术运算单元32和缺陷判定单元33对图案化晶片进行比较检查。由于可以通过仅扫描电子束一次来获得高对比度的电子束图像，因此图案化晶片 使用SEM的检查方法可以在IC制造方法中实现。

公开(公告)号：US20060043982A1

公开(公告)日：2006-03-02

申请号：US11269617

申请日：2005-11-09

Applicant: Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

Inventor： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC: G01R31/305

CPC classification number: G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

Abstract translation: 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US06559663B2

公开(公告)日：2003-05-06

申请号：US09983703

申请日：2001-10-25

Applicant: Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

Inventor： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC: G01R31305

CPC classification number: G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with: the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

Abstract translation: 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束的同时，在从照射电子束的时刻起经过规定时间后，照射电子束的部位检测到二次带电粒子，根据这样检测出形成图像 通过使用如此形成的图像来检查次级带电粒子信号和待检查的部分。

公开(公告)号：US06329826B1

公开(公告)日：2001-12-11

申请号：US09525341

申请日：2000-03-14

Applicant: Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

Inventor： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC: G01R31305

CPC classification number: G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

Abstract translation: 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US5666053A

公开(公告)日：1997-09-09

申请号：US391951

申请日：1995-02-21

Applicant: Hiroshi Suzuki ,  Hiroyuki Shinada ,  Katsuhiro Kuroda ,  Yusuke Yajima ,  Yoshio Takahashi ,  Hideo Saito ,  Masato Nakajima

Inventor： Hiroshi Suzuki ,  Hiroyuki Shinada ,  Katsuhiro Kuroda ,  Yusuke Yajima ,  Yoshio Takahashi ,  Hideo Saito ,  Masato Nakajima

IPC: G01R33/028 ,  G01R33/02 ,  G01R33/10 ,  G21K5/04 ,  H01J37/26 ,  H01J37/28 ,  G01R33/00 ,  G06G7/48 ,  G21K1/00

CPC classification number: G01R33/0213 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24564

Abstract: A charged particle beam is transmitted through a specimen for producing an irregular pattern as a first image. Further, a magnetic field to be measured is arranged in space where a charged particle beam is passed between the specimen and an image plane thereby to produce a second image having an irregular pattern as in the foregoing case. The first image and the second image are processed to produce the deflection angle of the charged particle beam due to the magnetic field. This deflection angle is extracted from the entire positions of a cross section of the space where measurement is desired, thereby constructing projection data of a magnetic field by a charged particle beam. Furthermore, the magnetic field to be measured is rotated and the above-mentioned processing is performed from each direction to construct projection data. The projection data thus obtained and the computer tomography technique are used to determine a magnetic field at each point in space.

Abstract translation: 带电粒子束通过用于产生不规则图案的样本作为第一图像传输。 另外，在上述情况下，在被检测体和像面之间通过带电粒子束的空间中，配置有要测量的磁场，从而产生具有不规则图案的第二图像。 处理第一图像和第二图像以产生由于磁场引起的带电粒子束的偏转角。 从需要测量的空间的横截面的整个位置提取该偏转角，由此通过带电粒子束构成磁场的投影数据。 此外，要测量的磁场被旋转，并且从每个方向执行上述处理以构造投影数据。 由此获得的投影数据和计算机断层摄影技术用于确定空间中的每个点处的磁场。