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公开(公告)号：US20200303624A1
公开(公告)日：2020-09-24
申请号：US16538974
申请日：2019-08-13
发明人： Nobuyuki UMETSU , Tsuyoshi Kondo , Masaki Kado , Shiho Nakamura , Susumu Hashimoto , Yasuaki Ootera , Michael Arnaud Quinsat , Masahiro Koike , Tsutomu Nakanishi , Megumi Yakabe , Agung Setiadi
摘要： A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.
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公开(公告)号：US10446249B2
公开(公告)日：2019-10-15
申请号：US16120636
申请日：2018-09-04
发明人： Michael Arnaud Quinsat , Yasuaki Ootera , Tsuyoshi Kondo , Nobuyuki Umetsu , Takuya Shimada , Masaki Kado , Susumu Hashimoto , Shiho Nakamura , Hideaki Aochi , Tomoya Sanuki , Shinji Miyano , Yoshihiro Ueda , Yuichi Ito , Yasuhito Yoshimizu
摘要： According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.
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公开(公告)号：US10354739B2
公开(公告)日：2019-07-16
申请号：US15919710
申请日：2018-03-13
发明人： Yasuaki Ootera , Tsuyoshi Kondo , Nobuyuki Umetsu , Michael Arnaud Quinsat , Takuya Shimada , Masaki Kado , Susumu Hashimoto , Shiho Nakamura , Hideaki Aochi , Tomoya Sanuki , Shinji Miyano , Yoshihiro Ueda , Yuichi Ito , Yasuhito Yoshimizu
摘要： According to one embodiment, a magnetic memory device includes a first magnetic portion, a first magnetic layer, a first nonmagnetic layer, a second magnetic portion, a second magnetic layer, a second nonmagnetic layer, a first electrode, and a second electrode. The first magnetic portion includes a first magnetic part and a second magnetic part. The first nonmagnetic layer is provided between the first magnetic layer and the first magnetic part. The second magnetic portion includes a third magnetic part and a fourth magnetic part. The second nonmagnetic layer is provided between the second magnetic layer and the third magnetic part. The first electrode electrically is connected to the second magnetic part and the fourth magnetic part. The second electrode is electrically connected to the first magnetic part and the third magnetic part.
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公开(公告)号：US20190088304A1
公开(公告)日：2019-03-21
申请号：US15918090
申请日：2018-03-12
发明人： Susumu HASHIMOTO , Yasuaki Ootera , Tsuyoshi Kondo , Takuya Shimada , Michael Arnaud Quinsat , Masaki Kado , Nobuyuki Umetsu , Shiho Nakamura , Tomoya Sanuki , Yoshihiro Ueda , Shinji Miyano , Hideaki Aochi , Yasuhito Yoshimizu , Yuichi Ito
摘要： According to one embodiment, a magnetic memory device includes a first magnetic portion, a first electrode, a second electrode, a third electrode, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes an extension portion and a third portion. The extension portion includes a first portion and a second portion. The third portion is connected to the second portion. The first electrode is electrically connected to the first portion. At least a portion of the third portion is positioned between the second electrode and the third electrode. The second magnetic portion is provided between the second electrode and the at least a portion of the third portion. The first nonmagnetic portion is provided between the second magnetic portion and the at least a portion of the third portion. The controller is electrically connected to the first, second electrode, and third electrodes.
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公开(公告)号：US20190019945A1
公开(公告)日：2019-01-17
申请号：US15911379
申请日：2018-03-05
发明人： Nobuyuki UMETSU , Tsuyoshi Kondo , Yasuaki Ootera , Takuya Shimada , Michael Arnaud Quinsat , Masaki Kado , Susumu Hashimoto , Shiho Nakamura
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/02 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetic element includes a first member and a first magnetic portion. The first member includes a first region, a second region, and a third region positioned between the first region and the second region in a first direction. The first region includes at least one first element selected from the group consisting of Au, Ir, Al, Ta, TaN, W, Hf, Pt, and Pd. The second region includes at least one second element selected from the group. The third region includes at least one third element selected from the group. A concentration of the third element in the third region is lower than a concentration of the first element in the first region and lower than a concentration of the second element in the second region. A direction from the first region toward the first magnetic portion is aligned with a second direction.
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公开(公告)号：US10916318B2
公开(公告)日：2021-02-09
申请号：US16543739
申请日：2019-08-19
发明人： Susumu Hashimoto , Masaki Kado , Michael Arnaud Quinsat , Nobuyuki Umetsu , Tsuyoshi Kondo , Yasuaki Ootera , Shiho Nakamura
摘要： A magnetic storage device of an embodiment includes: a first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion; a layered part which is stacked on the first magnetic part in a second direction intersecting with the first direction; a first electrode electrically connected with the first portion; and a second electrode electrically connected with the second portion. The layered part includes a first layer and a second layer which is disposed between the first layer and the first magnetic part, the second layer includes a metal oxide, and the first layer includes at least one selected from the group consisting of a metal nitride and a metal carbide.
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公开(公告)号：US10482941B2
公开(公告)日：2019-11-19
申请号：US16128554
申请日：2018-09-12
发明人： Takuya Shimada , Yasuaki Ootera , Tsuyoshi Kondo , Nobuyuki Umetsu , Michael Arnaud Quinsat , Masaki Kado , Susumu Hashimoto , Shiho Nakamura , Hideaki Aochi , Tomoya Sanuki , Shinji Miyano , Yoshihiro Ueda , Yuichi Ito , Yasuhito Yoshimizu
摘要： According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.
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公开(公告)号：US20180358104A1
公开(公告)日：2018-12-13
申请号：US15915650
申请日：2018-03-08
发明人： Yasuaki OOTERA , Tsuyoshi Kondo , Nobuyuki Umetsu , Michael Arnaud Quinsat , Takuya Shimada , Masaki Kado , Susumu Hashimoto , Shiho Nakamura
CPC分类号： G11C19/0841 , G11C11/14 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetic memory device includes a first magnetic portion extending in a first direction, a first magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and a portion of the first magnetic portion. The first magnetic portion has a first surface. The first surface includes bottom portions, and top portions. The bottom portions and the top portions are arranged alternately in the first direction. The bottom portions include a first bottom portion, a second bottom portion adjacent to the first bottom portion in the first direction, a third bottom portion, and a fourth bottom portion adjacent to the third bottom portion in the first direction. The top portions include a first top portion provided between the first bottom portion and the second bottom portion, and a second top portion provided between the third bottom portion and the fourth bottom portion.
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公开(公告)号：US09997565B2
公开(公告)日：2018-06-12
申请号：US15491078
申请日：2017-04-19
发明人： Takuya Shimada , Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yasuaki Ootera , Michael Arnaud Quinsat
IPC分类号： H01L29/66 , H01L27/22 , H01L43/08 , G11C11/16 , G11C19/08 , H01L43/02 , H01L43/10 , H01L43/12
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1697 , G11C19/0808 , G11C19/0841 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.
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公开(公告)号：US10446212B2
公开(公告)日：2019-10-15
申请号：US15918090
申请日：2018-03-12
发明人： Susumu Hashimoto , Yasuaki Ootera , Tsuyoshi Kondo , Takuya Shimada , Michael Arnaud Quinsat , Masaki Kado , Nobuyuki Umetsu , Shiho Nakamura , Tomoya Sanuki , Yoshihiro Ueda , Shinji Miyano , Hideaki Aochi , Yasuhito Yoshimizu , Yuichi Ito
摘要： According to one embodiment, a magnetic memory device includes a first magnetic portion, a first electrode, a second electrode, a third electrode, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes an extension portion and a third portion. The extension portion includes a first portion and a second portion. The third portion is connected to the second portion. The first electrode is electrically connected to the first portion. At least a portion of the third portion is positioned between the second electrode and the third electrode. The second magnetic portion is provided between the second electrode and the at least a portion of the third portion. The first nonmagnetic portion is provided between the second magnetic portion and the at least a portion of the third portion. The controller is electrically connected to the first, second electrode, and third electrodes.
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