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公开(公告)号：US11101012B2
公开(公告)日：2021-08-24
申请号：US16558868
申请日：2019-09-03
Applicant: TOSHIBA MEMORY CORPORATION
Inventor： Yoshihiro Ueda , Shinji Miyano
Abstract: A magnetic storage device includes a magnetic body including first and second magnetic regions and a magnetic connection region that connects the first and second magnetic regions, and in which a plurality of magnetic domains each storing information by a magnetization direction thereof is formed, a read element that is electrically connected to the magnetic connection region and by which a magnetization direction of one of the magnetic domains is read, and a write element by which a magnetic domain having a magnetization direction is formed in the magnetic body according to information to be stored. The magnetic domains formed in each of the first and second magnetic regions are shifted in a predetermined direction in response to current that flows through the corresponding one of the first and second magnetic regions.
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公开(公告)号：US10311932B2
公开(公告)日：2019-06-04
申请号：US15918304
申请日：2018-03-12
Applicant: Toshiba Memory Corporation
Inventor： Nobuyuki Umetsu , Tsuyoshi Kondo , Yasuaki Ootera , Takuya Shimada , Michael Arnaud Quinsat , Masaki Kado , Susumu Hashimoto , Shiho Nakamura , Tomoya Sanuki , Yoshihiro Ueda , Yuichi Ito , Shinji Miyano , Hideaki Aochi , Yasuhito Yoshimizu
Abstract: According to one embodiment, a magnetic memory device includes a magnetic portion, a first magnetic layer, a first nonmagnetic layer, a first element portion, first to third interconnects, and a controller. In a first operation, the controller sets the first interconnect to a first potential, the second interconnect to a second potential, and the third interconnect to a third potential. An absolute value of a difference between the second potential and the third potential is greater than that between the first potential and the third potential. In a second operation, the controller sets the first interconnect to a fourth potential, the second interconnect to a fifth potential, and the third interconnect to a sixth potential. An absolute value of a difference between the fifth potential and the sixth potential is less than that between the fourth potential and the sixth potential.
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公开(公告)号：US20190088346A1
公开(公告)日：2019-03-21
申请号：US15919710
申请日：2018-03-13
Applicant: Toshiba Memory Corporation
Inventor： Yasuaki Ootera , Tsuyoshi Kondo , Nobuyuki Umetsu , Michael Arnaud Quinsat , Takuya Shimada , Masaki Kado , Susumu Hashimoto , Shiho Nakamura , Hideaki Aochi , Tomoya Sanuki , Shinji Miyano , Yoshihiro Ueda , Yuichi Ito , Yasuhito Yoshimizu
CPC classification number: G11C19/0841 , G11C19/28 , H01L27/228 , H01L43/08 , H01L43/10
Abstract: According to one embodiment, a magnetic memory device includes a first magnetic portion, a first magnetic layer, a first nonmagnetic layer, a second magnetic portion, a second magnetic layer, a second nonmagnetic layer, a first electrode, and a second electrode. The first magnetic portion includes a first magnetic part and a second magnetic part. The first nonmagnetic layer is provided between the first magnetic layer and the first magnetic part. The second magnetic portion includes a third magnetic part and a fourth magnetic part. The second nonmagnetic layer is provided between the second magnetic layer and the third magnetic part. The first electrode electrically is connected to the second magnetic part and the fourth magnetic part. The second electrode is electrically connected to the first magnetic part and the third magnetic part.
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公开(公告)号：US20200082863A1
公开(公告)日：2020-03-12
申请号：US16285823
申请日：2019-02-26
Applicant: TOSHIBA MEMORY CORPORATION
Inventor： Yoshihiro Ueda , Shinji Miyano , Michael Arnaud Quinsat , Tsuyoshi Kondo
Abstract: According to one embodiment, there is provided a magnetic memory including a magnetic material column, a shift control circuit, and a write control circuit. The shift control circuit is connected to the magnetic material column. The write control circuit is configured to cause a current to flow through a write line passing near one end of the magnetic material column if writing data having a first value into the magnetic material column, and cause no current to flow through the write if writing data having a second value into the magnetic material column.
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公开(公告)号：US10446212B2
公开(公告)日：2019-10-15
申请号：US15918090
申请日：2018-03-12
Applicant: TOSHIBA MEMORY CORPORATION
Inventor： Susumu Hashimoto , Yasuaki Ootera , Tsuyoshi Kondo , Takuya Shimada , Michael Arnaud Quinsat , Masaki Kado , Nobuyuki Umetsu , Shiho Nakamura , Tomoya Sanuki , Yoshihiro Ueda , Shinji Miyano , Hideaki Aochi , Yasuhito Yoshimizu , Yuichi Ito
Abstract: According to one embodiment, a magnetic memory device includes a first magnetic portion, a first electrode, a second electrode, a third electrode, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes an extension portion and a third portion. The extension portion includes a first portion and a second portion. The third portion is connected to the second portion. The first electrode is electrically connected to the first portion. At least a portion of the third portion is positioned between the second electrode and the third electrode. The second magnetic portion is provided between the second electrode and the at least a portion of the third portion. The first nonmagnetic portion is provided between the second magnetic portion and the at least a portion of the third portion. The controller is electrically connected to the first, second electrode, and third electrodes.
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Patent Agency Ranking
公开(公告)号：US10403381B2
公开(公告)日：2019-09-03
申请号：US15918344
申请日：2018-03-12
Applicant: Toshiba Memory Corporation
Inventor： Michael Arnaud Quinsat , Takuya Shimada , Susumu Hashimoto , Nobuyuki Umetsu , Yasuaki Ootera , Masaki Kado , Tsuyoshi Kondo , Shiho Nakamura , Tomoya Sanuki , Yoshihiro Ueda , Yuichi Ito , Shinji Miyano , Hideaki Aochi , Yasuhito Yoshimizu
Abstract: According to one embodiment, a magnetic memory device includes a first magnetic member, a first electrode, a first magnetic layer, a first non-magnetic layer, a first conductive layer and a controller. The first magnetic member includes a first extending portion and a third magnetic portion. The first extending portion includes first and second magnetic portions. The third magnetic portion is connected with the second magnetic portion. The first electrode is electrically connected with the first magnetic portion. The first non-magnetic layer is provided between the first magnetic layer and at least a part of the third magnetic portion. The first conductive layer includes first and second conductive portions, and a third conductive portion being between the first conductive portion and the second conductive portion. The controller is electrically connected with the first electrode, the first magnetic layer, the first conductive portion and the second conductive portion.
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公开(公告)号：US10304902B2
公开(公告)日：2019-05-28
申请号：US15917145
申请日：2018-03-09
Applicant: Toshiba Memory Corporation
Inventor： Masaki Kado , Tsuyoshi Kondo , Yasuaki Ootera , Takuya Shimada , Michael Arnaud Quinsat , Nobuyuki Umetsu , Susumu Hashimoto , Shiho Nakamura , Hideaki Aochi , Tomoya Sanuki , Shinji Miyano , Yoshihiro Ueda , Yuichi Ito , Yasuhito Yoshimizu
Abstract: According to one embodiment, a magnetic memory device includes a first magnetic member, a first magnetic layer, and a first nonmagnetic layer. The first magnetic member includes a first extension portion and a third portion. The first extension portion extends along a first direction and includes a first portion and a second portion. The third portion is connected to the second portion. A direction from the first portion toward the second portion is aligned with the first direction. At least a portion of the third portion is tilted with respect to the first direction. The first nonmagnetic layer is provided between the first magnetic layer and the at least a portion of the third portion. The first nonmagnetic layer is provided along the at least a portion of the third portion and is tilted with respect to the first direction.
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公开(公告)号：US10482941B2
公开(公告)日：2019-11-19
申请号：US16128554
申请日：2018-09-12
Applicant: Toshiba Memory Corporation
Inventor： Takuya Shimada , Yasuaki Ootera , Tsuyoshi Kondo , Nobuyuki Umetsu , Michael Arnaud Quinsat , Masaki Kado , Susumu Hashimoto , Shiho Nakamura , Hideaki Aochi , Tomoya Sanuki , Shinji Miyano , Yoshihiro Ueda , Yuichi Ito , Yasuhito Yoshimizu
Abstract: According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.
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公开(公告)号：US10446249B2
公开(公告)日：2019-10-15
申请号：US16120636
申请日：2018-09-04
Applicant: Toshiba Memory Corporation
Inventor： Michael Arnaud Quinsat , Yasuaki Ootera , Tsuyoshi Kondo , Nobuyuki Umetsu , Takuya Shimada , Masaki Kado , Susumu Hashimoto , Shiho Nakamura , Hideaki Aochi , Tomoya Sanuki , Shinji Miyano , Yoshihiro Ueda , Yuichi Ito , Yasuhito Yoshimizu
Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.
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公开(公告)号：US10354739B2
公开(公告)日：2019-07-16
申请号：US15919710
申请日：2018-03-13
Applicant: Toshiba Memory Corporation
Inventor： Yasuaki Ootera , Tsuyoshi Kondo , Nobuyuki Umetsu , Michael Arnaud Quinsat , Takuya Shimada , Masaki Kado , Susumu Hashimoto , Shiho Nakamura , Hideaki Aochi , Tomoya Sanuki , Shinji Miyano , Yoshihiro Ueda , Yuichi Ito , Yasuhito Yoshimizu
Abstract: According to one embodiment, a magnetic memory device includes a first magnetic portion, a first magnetic layer, a first nonmagnetic layer, a second magnetic portion, a second magnetic layer, a second nonmagnetic layer, a first electrode, and a second electrode. The first magnetic portion includes a first magnetic part and a second magnetic part. The first nonmagnetic layer is provided between the first magnetic layer and the first magnetic part. The second magnetic portion includes a third magnetic part and a fourth magnetic part. The second nonmagnetic layer is provided between the second magnetic layer and the third magnetic part. The first electrode electrically is connected to the second magnetic part and the fourth magnetic part. The second electrode is electrically connected to the first magnetic part and the third magnetic part.
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