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公开(公告)号：US09799482B2
公开(公告)日：2017-10-24
申请号：US15067832
申请日：2016-03-11
Applicant: Toshiba Memory Corporation
Inventor： Yuichi Ohsawa , Akio Ui , Junichi Ito , Chikayoshi Kamata , Megumi Yakabe , Saori Kashiwada
CPC classification number: H01J37/08 , H01J37/09 , H01J37/20 , H01J37/30 , H01J37/3053 , H01J2237/0822 , H01J2237/083 , H01J2237/3151 , H01L27/228 , H01L43/12
Abstract: A device manufacturing apparatus and manufacturing method of a magnetic device. The device manufacturing apparatus can include a substrate holding portion configured to hold a substrate, an ion source, an anode disposed in a housing of the ion source, and a cathode disposed outside the housing of the ion source. A first opening can be disposed in a portion of the housing such the anode is exposed to a region between the anode and the substrate holding portion. The ion source can be configured to generate an ion beam with which the substrate is irradiated. A first structure can be disposed between the ion source and the substrate holding portion. The first structure can have a first through hole through which the ion beam can pass. The first structure can include a conductor, and an opening dimension of the first through hole can be equal to or larger than an opening dimension of the first opening.
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Patent Agency Ranking
公开(公告)号：US20200303624A1
公开(公告)日：2020-09-24
申请号：US16538974
申请日：2019-08-13
Applicant: TOSHIBA MEMORY CORPORATION
Inventor： Nobuyuki UMETSU , Tsuyoshi Kondo , Masaki Kado , Shiho Nakamura , Susumu Hashimoto , Yasuaki Ootera , Michael Arnaud Quinsat , Masahiro Koike , Tsutomu Nakanishi , Megumi Yakabe , Agung Setiadi
Abstract: A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.
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公开(公告)号：US20200303457A1
公开(公告)日：2020-09-24
申请号：US16531275
申请日：2019-08-05
Applicant: TOSHIBA MEMORY CORPORATION
Inventor： Yasuaki Ootera , Tsutomu Nakanishi , Megumi Yakabe , Nobuyuki Umetsu , Agung Setiadi , Tsuyoshi Kondo
Abstract: A magnetic memory according to an embodiment includes: a magnetic member having a cylindrical form, the magnetic member including a first end portion and a second end portion and extending in a first direction from the first end portion to the second end portion, the first end portion having an end face, which includes a face inclined with respect to a plane perpendicular to the first direction.
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公开(公告)号：US10707356B2
公开(公告)日：2020-07-07
申请号：US16353126
申请日：2019-03-14
Applicant: TOSHIBA MEMORY CORPORATION
Inventor： Megumi Yakabe , Yasushi Nakasaki , Tadaomi Daibou , Tadashi Kai , Junichi Ito , Masahiro Koike , Shogo Itai , Takamitsu Ishihara
Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including first and second magnetic layers having variable and fixed magnetization directions, respectively, and a nonmagnetic layer provided between the first and second magnetic layers and containing a first compound containing first cationic and anionic elements, and a predetermined-material layer provided around side surfaces of the stacked structure and containing a second compound containing second added cationic and second added anionic elements. An absolute value of a valence number (ionic valency) of the second added cationic element is less than that of the first cationic element, and an absolute value of a valence number (ionic valency) of the second added anionic element is less than that of the first anionic element.
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公开(公告)号：US10340311B2
公开(公告)日：2019-07-02
申请号：US15696751
申请日：2017-09-06
Applicant: Toshiba Memory Corporation
Inventor： Megumi Yakabe , Satoshi Seto , Chikayoshi Kamata , Saori Kashiwada , Junichi Ito
Abstract: According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a nonmagnetic layer provided on the first magnetic layer; a second magnetic layer provided on the nonmagnetic layer; a first insulating layer provided at least on a side surface of the second magnetic layer; a second insulating layer covering at least a part of the first insulating layer; a conductive layer provided between the first insulating layer and the second insulating layer; and a first electrode including a first portion on the second magnetic layer and a second portion on a side surface of the second insulating layer. A height of a lower surface of the second portion is equal to or less than a height of an upper surface of the conductive layer.
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公开(公告)号：US11217628B2
公开(公告)日：2022-01-04
申请号：US16531275
申请日：2019-08-05
Applicant: TOSHIBA MEMORY CORPORATION
Inventor： Yasuaki Ootera , Tsutomu Nakanishi , Megumi Yakabe , Nobuyuki Umetsu , Agung Setiadi , Tsuyoshi Kondo
Abstract: A magnetic memory according to an embodiment includes: a magnetic member having a cylindrical form, the magnetic member including a first end portion and a second end portion and extending in a first direction from the first end portion to the second end portion, the first end portion having an end face, which includes a face inclined with respect to a plane perpendicular to the first direction.
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