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公开(公告)号：US20190088712A1
公开(公告)日：2019-03-21
申请号：US15917145
申请日：2018-03-09
发明人： Masaki KADO , Tsuyoshi KONDO , Yasuaki OOTERA , Takuya SHIMADA , Michael Arnaud QUINSAT , Nobuyuki UMETSU , Susumu HASHIMOTO , Shiho NAKAMURA , Hideaki AOCHI , Tomoya SANUKI , Shinji MIYANO , Yoshihiro UEDA , Yuichi ITO , Yasuhito YOSHIMIZU
摘要： According to one embodiment, a magnetic memory device includes a first magnetic member, a first magnetic layer, and a first nonmagnetic layer. The first magnetic member includes a first extension portion and a third portion. The first extension portion extends along a first direction and includes a first portion and a second portion. The third portion is connected to the second portion. A direction from the first portion toward the second portion is aligned with the first direction. At least a portion of the third portion is tilted with respect to the first direction. The first nonmagnetic layer is provided between the first magnetic layer and the at least a portion of the third portion. The first nonmagnetic layer is provided along the at least a portion of the third portion and is tilted with respect to the first direction.
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公开(公告)号：US20200303026A1
公开(公告)日：2020-09-24
申请号：US16543739
申请日：2019-08-19
发明人： Susumu HASHIMOTO , Masaki KADO , Michael Arnaud QUINSAT , Nobuyuki UMETSU , Tsuyoshi KONDO , Yasuaki OOTERA , Shiho NAKAMURA
摘要： A magnetic storage device of an embodiment includes: a first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion; a layered part which is stacked on the first magnetic part in a second direction intersecting with the first direction; a first electrode electrically connected with the first portion; and a second electrode electrically connected with the second portion. The layered part includes a first layer and a second layer which is disposed between the first layer and the first magnetic part, the second layer includes a metal oxide, and the first layer includes at least one selected from the group consisting of a metal nitride and a metal carbide.
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公开(公告)号：US20190088345A1
公开(公告)日：2019-03-21
申请号：US15918344
申请日：2018-03-12
发明人： Michael Arnaud QUINSAT , Takuya SHIMADA , Susumu HASHIMOTO , Nobuyuki UMETSU , Yasuaki OOTERA , Masaki KADO , Tsuyoshi KONDO , Shiho NAKAMURA , Tomoya SANUKI , Yoshihiro UEDA , Yuichi ITO , Shinji MIYANO , Hideaki AOCHI , Yasuhito YOSHIMIZU
CPC分类号： G11C19/0841 , G11C19/28 , H01L43/02 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetic memory device includes a first magnetic member, a first electrode, a first magnetic layer, a first non-magnetic layer, a first conductive layer and a controller. The first magnetic member includes a first extending portion and a third magnetic portion. The first extending portion includes first and second magnetic portions. The third magnetic portion is connected with the second magnetic portion. The first electrode is electrically connected with the first magnetic portion. The first non-magnetic layer is provided between the first magnetic layer and at least a part of the third magnetic portion. The first conductive layer includes first and second conductive portions, and a third conductive portion being between the first conductive portion and the second conductive portion. The controller is electrically connected with the first electrode, the first magnetic layer, the first conductive portion and the second conductive portion.
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公开(公告)号：US20200303624A1
公开(公告)日：2020-09-24
申请号：US16538974
申请日：2019-08-13
发明人： Nobuyuki UMETSU , Tsuyoshi Kondo , Masaki Kado , Shiho Nakamura , Susumu Hashimoto , Yasuaki Ootera , Michael Arnaud Quinsat , Masahiro Koike , Tsutomu Nakanishi , Megumi Yakabe , Agung Setiadi
摘要： A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.
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公开(公告)号：US20190287598A1
公开(公告)日：2019-09-19
申请号：US16128554
申请日：2018-09-12
发明人： Takuya SHIMADA , Yasuaki OOTERA , Tsuyoshi KONDO , Nobuyuki UMETSU , Michael Arnaud QUINSAT , Masaki KADO , Susumu HASHIMOTO , Shiho NAKAMURA , Hideaki AOCHI , Tomoya SANUKI , Shinji MIYANO , Yoshihiro UEDA , Yuichi ITO , Yasuhito YOSHIMIZU
摘要： According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.
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公开(公告)号：US20190088305A1
公开(公告)日：2019-03-21
申请号：US15918304
申请日：2018-03-12
发明人： Nobuyuki UMETSU , Tsuyoshi KONDO , Yasuaki OOTERA , Takuya SHIMADA , Michael Arnaud QUINSAT , Masaki KADO , Susumu HASHIMOTO , Shiho NAKAMURA , Tomoya SANUKI , Yoshihiro UEDA , Yuichi ITO , Shinji MIYANO , Hideeaki AOCHI , Yasuhito YOSHIMIZU
IPC分类号： G11C11/16 , H01L27/22 , H01L23/528
摘要： According to one embodiment, a magnetic memory device includes a magnetic portion, a first magnetic layer, a first nonmagnetic layer, a first element portion, first to third interconnects, and a controller. In a first operation, the controller sets the first interconnect to a first potential, the second interconnect to a second potential, and the third interconnect to a third potential. An absolute value of a difference between the second potential and the third potential is greater than that between the first potential and the third potential. In a second operation, the controller sets the first interconnect to a fourth potential, the second interconnect to a fifth potential, and the third interconnect to a sixth potential. An absolute value of a difference between the fifth potential and the sixth potential is less than that between the fourth potential and the sixth potential.
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公开(公告)号：US20190019945A1
公开(公告)日：2019-01-17
申请号：US15911379
申请日：2018-03-05
发明人： Nobuyuki UMETSU , Tsuyoshi Kondo , Yasuaki Ootera , Takuya Shimada , Michael Arnaud Quinsat , Masaki Kado , Susumu Hashimoto , Shiho Nakamura
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/02 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetic element includes a first member and a first magnetic portion. The first member includes a first region, a second region, and a third region positioned between the first region and the second region in a first direction. The first region includes at least one first element selected from the group consisting of Au, Ir, Al, Ta, TaN, W, Hf, Pt, and Pd. The second region includes at least one second element selected from the group. The third region includes at least one third element selected from the group. A concentration of the third element in the third region is lower than a concentration of the first element in the first region and lower than a concentration of the second element in the second region. A direction from the first region toward the first magnetic portion is aligned with a second direction.
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公开(公告)号：US20180254076A1
公开(公告)日：2018-09-06
申请号：US15700769
申请日：2017-09-11
发明人： Hirofumi MORISE , Tsuyoshi KONDO , Nobuyuki UMETSU , Yasuaki OOTERA , Susumu HASHIMOTO , Masaki KADO , Takuya SHIMADA , Michael Arnaud QUINSAT , Shiho NAKAMURA
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0841 , H01L43/08
摘要： According to an embodiment, a magnetic memory includes a first magnetic portion, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes a first portion and a second portion. The controller in a first operation supplies a first current from the first portion toward the second portion. The controller in a second operation supplies a second current to from the second portion toward the first portion. A first electrical resistance value can be different from a second electrical resistance value. The first electrical resistance value is between the second magnetic portion and the portion of the first magnetic portion before the first operation and the second operation are performed. The second electrical resistance value is between the second magnetic portion and the portion of the first magnetic portion after the first operation and the second operation are performed.
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