公开(公告)号：US09045653B2

公开(公告)日：2015-06-02

申请号：US13975231

申请日：2013-08-23

申请人： Thin Film Electronics ASA

发明人： Erik Scher ,  Steven Molesa ,  Joerg Rockenberger ,  Arvind Kamath ,  Ikuo Mori ,  Wenzhuo Guo ,  Dmitry Karshtedt ,  Vladimir K. Dioumaev

IPC分类号： C09D11/101 ,  C09D5/24 ,  C09D11/322 ,  C09D11/36 ,  C09D11/54 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L29/786 ,  H01B3/02 ,  H01L27/12

CPC分类号： C09D5/24 ,  C09D11/101 ,  C09D11/322 ,  C09D11/36 ,  C09D11/54 ,  H01B3/02 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/28008 ,  H01L27/1292 ,  H01L29/6675 ,  H01L29/78696 ,  Y10T428/24802

摘要： Embodiments relate to printing features from an ink containing a material precursor. In some embodiments, the material includes an electrically active material, such as a semiconductor, a metal, or a combination thereof. In another embodiment, the material includes a dielectric. The embodiments provide improved printing process conditions that allow for more precise control of the shape, profile and dimensions of a printed line or other feature. The composition(s) and/or method(s) improve control of pinning by increasing the viscosity and mass loading of components in the ink. An exemplary method thus includes printing an ink comprising a material precursor and a solvent in a pattern on the substrate; precipitating the precursor in the pattern to form a pinning line; substantially evaporating the solvent to form a feature of the material precursor defined by the pinning line; and converting the material precursor to the patterned material.

摘要翻译： 实施例涉及从含有材​​料前体的油墨印刷特征。 在一些实施例中，材料包括电活性材料，例如半导体，金属或其组合。 在另一个实施例中，该材料包括电介质。 这些实施例提供改进的印刷工艺条件，其允许更精确地控制印刷线或其它特征的形状，轮廓和尺寸。 组合物和/或方法通过增加油墨中组分的粘度和质量负载来改善对钉扎的控制。 因此，示例性方法包括在基板上以图案印刷包含材料前体和溶剂的油墨; 以图案沉淀前体以形成钉扎线; 基本上蒸发溶剂以形成由钉扎线限定的材料前体的特征; 并将材料前体转化成图案化材料。

公开(公告)号：US10826158B2

公开(公告)日：2020-11-03

申请号：US16287126

申请日：2019-02-27

申请人： Thin Film Electronics ASA

发明人： Somnath Mukherjee ,  Aditi Chandra ,  Mao Ito ,  Arvind Kamath ,  Scott Bruner ,  Sambhu Kundu ,  Anand Deshpande

IPC分类号： H01L23/52 ,  H01Q1/22 ,  H01L23/532 ,  H01L23/528 ,  H01L23/64 ,  H01L23/522 ,  H01L23/66

摘要： A wireless communication device having an integrated antenna, and methods for making and using the same are disclosed. The device generally includes (a) a substrate; (b) an integrated circuit (IC) comprising a plurality of printed and/or thin film layers and/or structures on the substrate, (c) a dielectric or insulator layer in at least one area of the substrate other than the IC; and (d) an antenna on the dielectric or insulator layer, comprising one or more metal traces. The plurality of printed and/or thin film layers and/or structures include an uppermost layer of metal. The antenna has (i) an inner terminal continuous with the uppermost layer of metal or connected to the uppermost layer of metal through one or more contacts, and (ii) an outer terminal connected to the uppermost layer of metal through one or more contacts and optionally a metal bridge or strap.

公开(公告)号：US09552924B2

公开(公告)日：2017-01-24

申请号：US14613178

申请日：2015-02-03

申请人： Thin Film Electronics ASA

发明人： Arvind Kamath ,  Criswell Choi ,  Patrick Smith ,  Erik Scher ,  Jiang Li

IPC分类号： H01G4/228 ,  H01G4/10 ,  H01G4/005 ,  H01G4/33 ,  H01G4/002 ,  H01L27/01 ,  H01L49/02 ,  H01G4/01 ,  H01G13/00 ,  H01G4/30 ,  H01Q1/22

CPC分类号： H01G4/40 ,  H01G4/002 ,  H01G4/005 ,  H01G4/008 ,  H01G4/01 ,  H01G4/10 ,  H01G4/1209 ,  H01G4/224 ,  H01G4/30 ,  H01G4/306 ,  H01G4/33 ,  H01G13/00 ,  H01L23/66 ,  H01L27/016 ,  H01L28/60 ,  H01L2223/6677 ,  H01Q1/22 ,  H01Q1/2283 ,  H01Q1/38 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49016

摘要： High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.

摘要翻译： 高精度电容器及其形成方法采用精确且高度保形的沉积工艺，用于在各种粗糙度和组成的基底上沉积绝缘层。 该方法通常包括以下步骤：通过原子层沉积（ALD）在金属衬底上沉积第一绝缘层; （b）在所述第一绝缘层上形成第一电容器电极; 和（c）在所述第一绝缘层上形成第二绝缘层，并且在所述第一电容器电极上或与所述第一电容器电极相邻。 实施例提供了一种改进的沉积工艺，其在宽范围的衬底上产生高度保形的绝缘层，从而产生改进的电容器。

公开(公告)号：US09640390B1

公开(公告)日：2017-05-02

申请号：US13889243

申请日：2013-05-07

申请人： Thin Film Electronics ASA

发明人： Wenzhuo Guo ,  Fabio Zurcher ,  Arvind Kamath ,  Joerg Rockenberger

IPC分类号： H01L21/02 ,  C08G77/56 ,  H01L27/12 ,  H01L29/66 ,  C09D183/16 ,  H01L21/208

CPC分类号： H01L21/02667 ,  C08G77/56 ,  C08K5/55 ,  C08K2201/001 ,  C09D11/52 ,  C09D183/16 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/208 ,  H01L27/1292 ,  H01L29/167 ,  H01L29/66757

摘要： Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.

公开(公告)号：US10332686B2

公开(公告)日：2019-06-25

申请号：US15385727

申请日：2016-12-20

申请人： Thin Film Electronics ASA

发明人： Arvind Kamath ,  Criswell Choi ,  Patrick Smith ,  Erik Scher ,  Jiang Li

IPC分类号： H01G4/06 ,  H01G4/005 ,  H01G4/33 ,  H01G4/40 ,  H01G4/002 ,  H01L27/01 ,  H01L49/02 ,  H01G4/01 ,  H01G13/00 ,  H01G4/10 ,  H01G4/30 ,  H01Q1/22 ,  H01G4/008 ,  H01G4/12 ,  H01G4/224 ,  H01L23/66 ,  H01Q1/38

摘要： High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.

公开(公告)号：US09947988B2

公开(公告)日：2018-04-17

申请号：US15230348

申请日：2016-08-05

申请人： Thin Film Electronics ASA

发明人： Mao Takashima ,  Aditi Chandra ,  Somnath Mukherjee ,  Gloria Wong ,  Khanh Van Tu ,  Joey Li ,  Anton Popiolek ,  Arvind Kamath

IPC分类号： H01Q1/24 ,  H01Q1/22 ,  H01Q7/06

CPC分类号： H01Q1/2291 ,  H01Q7/06

摘要： A wireless communication device and methods of manufacturing and using the same are disclosed. The wireless communication device includes a substrate with an antenna and/or inductor thereon, a patterned ferrite layer overlapping the antenna and/or inductor, and a capacitor electrically connected to the antenna and/or inductor. The wireless communication device may further include an integrated circuit including a receiver configured to convert a first wireless signal to an electric signal and a transmitter configured to generate a second wireless signal, the antenna being configured to receive the first wireless signal and transmit or broadcast the second wireless signal. The patterned ferrite layer advantageously mitigates the deleterious effect of metal objects in proximity to a reader and/or transponder magnetically coupled to the antenna.

公开(公告)号：US09196641B2

公开(公告)日：2015-11-24

申请号：US13633816

申请日：2012-10-02

申请人： Thin Film Electronics ASA

发明人： Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zurcher

IPC分类号： H01L27/00 ,  H01L27/12 ,  H01L29/66

CPC分类号： H01L27/1292 ,  H01L29/66757

摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或上方，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

公开(公告)号：US09359513B1

公开(公告)日：2016-06-07

申请号：US14305559

申请日：2014-06-16

申请人： Thin Film Electronics ASA

发明人： Mao Takashima ,  Inna Tregub ,  Wenzhuo Guo ,  Brian Bedwell ,  Klaus Kunze ,  Aditi Chandra ,  Arvind Kamath ,  Jun Li ,  Li Li ,  Junfeng Mei

IPC分类号： C09D11/107

CPC分类号： C09D11/107 ,  C09D11/52 ,  H01L51/0005

摘要： Printable dopant formulations, methods of making such dopant formulations, and methods of using such dopant formulations are disclosed. The dopant formulations provide a printable dopant ink with a viscosity sufficient to prevent ink spreading when deposited in a pattern on a substrate. Furthermore, an ion exchange purification process provides the dopant formulation with a reduced metal ion concentration, and thus a relatively high purity level. Consequently, the dopant residue remaining on the substrate after curing and/or dopant activation process is relatively uniform, and therefore can be easily removed.

摘要翻译： 公开了可印刷掺杂剂配方，制备这种掺杂剂配方的方法，以及使用这种掺杂剂配方的方法。 掺杂剂配方提供可印刷的掺杂剂油墨，其具有足够的粘度，以防止当以基板上的图案沉积时的油墨扩散。 此外，离子交换纯化方法为掺杂剂配方提供降低的金属离子浓度，从而提供相当高的纯度水平。 因此，在固化和/或掺杂剂活化过程之后残留在基板上的掺杂剂残留物相对均匀，因此可以容易地除去。