公开(公告)号：US09361573B2

公开(公告)日：2016-06-07

申请号：US14599972

申请日：2015-01-19

申请人： Thin Film Electronics ASA

发明人： Vikram Pavate ,  Criswell Choi

IPC分类号： G06K19/06 ,  G06K19/077 ,  H01Q1/22 ,  H01Q7/00 ,  H01Q23/00

CPC分类号： G06K19/07783 ,  G06K19/07749 ,  H01Q1/2208 ,  H01Q1/2225 ,  H01Q7/00 ,  H01Q23/00 ,  Y10T29/49018

摘要： Wireless devices such as sensors, interactive displays and electronic article surveillance (EAS) and/or radio frequency identification (RFID) tags including integrated circuitry and an antenna and/or inductor printed thereon, and methods for making and using the same, are disclosed. The device generally includes an integrated circuit on a substrate and an antenna, directly on the substrate and/or the integrated circuit, in electrical communication with the integrated circuit. The method of making a wireless device generally includes forming an integrated circuit on the substrate and printing at least part of an antenna or antenna precursor layer on the integrated circuit and/or substrate. The present invention advantageously provides a low cost wireless device capable of operating at MHz frequencies that can be manufactured in a shorter time period than conventional devices.

公开(公告)号：US09400953B1

公开(公告)日：2016-07-26

申请号：US14285469

申请日：2014-05-22

申请人： Thin Film Electronics ASA

发明人： Criswell Choi ,  Joerg Rockenberger ,  Christopher Gudeman ,  J. Devin Mackenzie ,  Partick Smith ,  James Montague Cleeves

IPC分类号： G03F7/00 ,  G01S13/74 ,  G06K19/077 ,  G08B13/24

CPC分类号： G06K19/07773 ,  G03F7/0043 ,  G03F7/2055 ,  G06K19/07749 ,  G08B13/2402 ,  G08B13/2417 ,  G08B13/244 ,  G08B13/2468

摘要： Methods, algorithms, processes, circuits, and/or structures for laser patterning suitable for customized RFID designs are disclosed. In one embodiment, a method of laser patterning of an identification device can include the steps of: (i) depositing a patternable resist formulation on a substrate having configurable elements and/or materials thereon; (ii) irradiating the resist formulation with a laser tool sufficiently to change the solubility characteristics of the resist in a developer; and (iii) developing exposed areas of the resist using the developer. Embodiments of the present invention can advantageously provide a relatively low cost and high throughput approach for customized RFID devices.

摘要翻译： 公开了适用于定制RFID设计的用于激光图案的方法，算法，过程，电路和/或结构。 在一个实施例中，识别装置的激光图案化的方法可以包括以下步骤：（i）在其上具有可配置元件和/或材料的衬底上沉积可图案化的抗蚀剂制剂; （ii）用激光工具照射抗蚀剂制剂，足以改变显影剂中抗蚀剂的溶解度特性; 和（iii）使用显影剂显影抗蚀剂的曝光区域。 本发明的实施例可以有利地为定制的RFID设备提供相对低成本和高吞吐量的方法。

公开(公告)号：US09552924B2

公开(公告)日：2017-01-24

申请号：US14613178

申请日：2015-02-03

申请人： Thin Film Electronics ASA

发明人： Arvind Kamath ,  Criswell Choi ,  Patrick Smith ,  Erik Scher ,  Jiang Li

IPC分类号： H01G4/228 ,  H01G4/10 ,  H01G4/005 ,  H01G4/33 ,  H01G4/002 ,  H01L27/01 ,  H01L49/02 ,  H01G4/01 ,  H01G13/00 ,  H01G4/30 ,  H01Q1/22

CPC分类号： H01G4/40 ,  H01G4/002 ,  H01G4/005 ,  H01G4/008 ,  H01G4/01 ,  H01G4/10 ,  H01G4/1209 ,  H01G4/224 ,  H01G4/30 ,  H01G4/306 ,  H01G4/33 ,  H01G13/00 ,  H01L23/66 ,  H01L27/016 ,  H01L28/60 ,  H01L2223/6677 ,  H01Q1/22 ,  H01Q1/2283 ,  H01Q1/38 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49016

摘要： High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.

摘要翻译： 高精度电容器及其形成方法采用精确且高度保形的沉积工艺，用于在各种粗糙度和组成的基底上沉积绝缘层。 该方法通常包括以下步骤：通过原子层沉积（ALD）在金属衬底上沉积第一绝缘层; （b）在所述第一绝缘层上形成第一电容器电极; 和（c）在所述第一绝缘层上形成第二绝缘层，并且在所述第一电容器电极上或与所述第一电容器电极相邻。 实施例提供了一种改进的沉积工艺，其在宽范围的衬底上产生高度保形的绝缘层，从而产生改进的电容器。

公开(公告)号：US10332686B2

公开(公告)日：2019-06-25

申请号：US15385727

申请日：2016-12-20

申请人： Thin Film Electronics ASA

发明人： Arvind Kamath ,  Criswell Choi ,  Patrick Smith ,  Erik Scher ,  Jiang Li

IPC分类号： H01G4/06 ,  H01G4/005 ,  H01G4/33 ,  H01G4/40 ,  H01G4/002 ,  H01L27/01 ,  H01L49/02 ,  H01G4/01 ,  H01G13/00 ,  H01G4/10 ,  H01G4/30 ,  H01Q1/22 ,  H01G4/008 ,  H01G4/12 ,  H01G4/224 ,  H01L23/66 ,  H01Q1/38

摘要： High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.