HEAT DISSIPATION USING NANOSCALE MATERIALS
    3.
    发明申请

    公开(公告)号:US20190115278A1

    公开(公告)日:2019-04-18

    申请号:US16091939

    申请日:2017-04-06

    IPC分类号: H01L23/373 H01B3/02

    摘要: Systems and methods for heat dissipation are described. Systems and methods may include a gradient nanoparticle structure applied to a substrate, such as electrical transmission, distribution lines, to photovoltaic cells, and/or batteries of transportation vehicles and electronic devices.

    RESISTANCE COVERING FOR A DC INSULATION SYSTEM
    8.
    发明申请
    RESISTANCE COVERING FOR A DC INSULATION SYSTEM 审中-公开
    直流绝缘系统的电阻覆盖

    公开(公告)号:US20160027549A1

    公开(公告)日:2016-01-28

    申请号:US14772965

    申请日:2014-01-15

    发明人: Steffen LANG

    摘要: A resistance covering for a DC insulation system may be a matrix material with particles embedded therein, the particles having an aspect ratio greater than 1. The matrix material is flexible to such an extent that the particles align depending on an electric field strength. The particles can align in the electric field and thus a breakdown voltage of the resistance covering is increased. A DC insulation system may have the resistance covering.

    摘要翻译: 用于直流绝缘系统的电阻覆盖物可以是具有嵌入其中的颗粒的基质材料,所述颗粒具有大于1的纵横比。基质材料是柔性的,使得颗粒根据电场强度对准。 颗粒可以在电场中对准,因此电阻覆盖层的击穿电压增加。 直流绝缘系统可能具有电阻覆盖。

    Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof
    10.
    发明授权
    Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof 有权
    钒补偿,NU和PI型的SI SiC单晶及其晶体生长过程

    公开(公告)号:US09090989B2

    公开(公告)日:2015-07-28

    申请号:US13902016

    申请日:2013-05-24

    摘要: In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.

    摘要翻译: 在晶体生长装置和方法中,将多晶源材料和晶种引入到由设置在炉室内部的生长坩埚组成的生长环境中。 在存在第一升华生长压力的情况下,通过在第一气体的流动存在下,通过在晶种上沉淀升华的源材料在晶种上生长单晶,所述第一气体包括与反应物质反应并除去的反应性组分 在升华生长期间来自生长环境的供体和/或受体背景杂质。 然后,在存在第二升华生长压力的情况下,单晶通过在包括掺杂剂蒸气的第二气体的流动存在下在晶种上沉淀升华的源材料而在晶种上生长,但是它是 不包括反应性组分。