公开(公告)号：US20240404962A1

公开(公告)日：2024-12-05

申请号：US18329063

申请日：2023-06-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Pei-Hsuan LO ,  Chih-Ming KE ,  Jeng-Nan HUNG ,  Chung-Jung WU ,  Yu-Yi HUANG

IPC: H01L23/544 ,  H01L21/768 ,  H01L23/00 ,  H01L23/48 ,  H01L25/00

Abstract: A package structure is provided, and includes a first bonding film formed on a first substrate, and a first alignment mark formed in the first bonding film. The first alignment mark includes a plurality of first patterns spaced apart from each other. The package structure includes a second bonding film formed on a second substrate and bonded to the first bonding film, and a second alignment mark formed in the second bonding film. The second alignment mark includes a plurality of second patterns spaced apart from each other. In a top view, the first alignment mark is spaced apart from the second alignment mark, and the distance between adjacent first patterns is less than the distance between the first alignment mark and the second alignment mark.

公开(公告)号：US20210384103A1

公开(公告)日：2021-12-09

申请号：US17411579

申请日：2021-08-25

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tung-Liang SHAO ,  Jen-Yu WANG ,  Chung-Jung WU ,  Chih-Hang TUNG ,  Chen-Hua YU

IPC: H01L23/42 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L25/18

Abstract: A method of forming a semiconductor package is provided. The method includes forming a metallization stack over a semiconductor die. Polymer particles are mounted over the metallization stack. Each of the polymer particles is coated with a first bonding layer. A heat spreader lid is bonded with the semiconductor die by reflowing the first bonding layer. A composite thermal interface material (TIM) structure is formed between the heat spreader lid and the semiconductor die during the bonding. The composite TIM structure includes the first bonding layer and the polymer particles embedded in the first bonding layer.

公开(公告)号：US20240371705A1

公开(公告)日：2024-11-07

申请号：US18312012

申请日：2023-05-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jeng-Nan HUNG ,  Chen-Hua YU ,  Tung-Li WU ,  Chung-Jung WU

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/683 ,  H01L23/00

Abstract: A wafer bonding apparatus is provided. The wafer bonding apparatus includes a first wafer chuck, a second wafer chuck, and a plurality of bonding pins. The first wafer chuck is configured to hold a first wafer. The second wafer chuck is configured to hold a second wafer. The bonding pins are accommodated in the first wafer chuck and configured to be movable through the first wafer chuck to apply pressure to bend the first wafer, thereby causing bonding contact of the first wafer and the second wafer.

公开(公告)号：US20170012019A1

公开(公告)日：2017-01-12

申请号：US15276196

申请日：2016-09-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Su-Chun YANG ,  Chung-Jung WU ,  Hsiao-Yun CHEN ,  Yi-Li HSIAO ,  Chih-Hang TUNG ,  Da-Yuan SHIH ,  Chen-Hua YU

IPC: H01L23/00 ,  C22C13/00 ,  B23K35/26 ,  B23K1/00 ,  B23K35/02

CPC classification number: H01L24/81 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/262 ,  B23K2101/40 ,  B23K2103/08 ,  C22C13/00 ,  H01L23/49811 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16506 ,  H01L2224/16507 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/8193 ,  H01L2224/81947 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/3841

Abstract: A method of producing a solder bump joint includes heating a solder bump comprising tin above a melting temperature of the solder bump, wherein the solder bumps comprises eutectic Sn—Bi compound, and the eutectic Sn-Bi compound is free of Ag. The method further includes stretching the solder bump to increase a height of the solder bump, wherein stretching the solder bump forms lamellar structures having a contact angle of less than 90°. The method further includes cooling down the solder bump.

Abstract translation: 一种制造焊料凸点接头的方法包括将包含锡的焊料凸点加热到焊锡凸块的熔化温度以上，其中焊料凸块包括共晶Sn-Bi化合物，并且共晶Sn-Bi化合物不含Ag。 该方法还包括拉伸焊料凸起以增加焊料凸块的高度，其中拉伸焊料凸点形成具有小于90°的接触角的层状结构。 该方法还包括冷却焊料凸块。

公开(公告)号：US20240145316A1

公开(公告)日：2024-05-02

申请号：US18298206

申请日：2023-04-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chung-Jung WU ,  Jeng-Nan HUNG ,  Chih-Hang TUNG

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/822

CPC classification number: H01L22/26 ,  H01L21/67253 ,  H01L21/8221

Abstract: A bonding tool includes a bonding monitoring system. The bonding monitoring system may include one or more sensors that are configured to generate bonding wave propagation data associated with a bonding operation. As a bond between a top semiconductor substrate and a bottom semiconductor substrate propagates from respective centers to respective perimeters of the top semiconductor substrate and the bottom semiconductor substrate, the one or more sensors of the bonding monitoring system generates the bonding wave propagation data. A controller that communicates with the one or more sensors receives the bonding wave propagation data from the one or more sensors. The controller may monitor the bonding wave propagation based on the bonding wave propagation data and/or may determine various performance parameters of the bonding operation, such as a bonding wave propagation rate and/or a bonding wave propagation uniformity, among other examples.