公开(公告)号：US20240371705A1

公开(公告)日：2024-11-07

申请号：US18312012

申请日：2023-05-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jeng-Nan HUNG ,  Chen-Hua YU ,  Tung-Li WU ,  Chung-Jung WU

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/683 ,  H01L23/00

Abstract: A wafer bonding apparatus is provided. The wafer bonding apparatus includes a first wafer chuck, a second wafer chuck, and a plurality of bonding pins. The first wafer chuck is configured to hold a first wafer. The second wafer chuck is configured to hold a second wafer. The bonding pins are accommodated in the first wafer chuck and configured to be movable through the first wafer chuck to apply pressure to bend the first wafer, thereby causing bonding contact of the first wafer and the second wafer.

公开(公告)号：US20230324814A1

公开(公告)日：2023-10-12

申请号：US17717709

申请日：2022-04-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： I-Hsiung HUANG ,  Yung-Cheng CHEN ,  Tung-Li WU

IPC: G03F7/20

CPC classification number: G03F7/70916 ,  B01D39/2065 ,  G03F7/70025 ,  G03F7/70033

Abstract: An extreme ultra violet (EUV) lithography apparatus includes a light source that generates an EUV light beam, a scanner that receives the light from a junction with the light source and directs the light to a reticle stage, and a debris catcher disposed on a EUV beam path between the light source and the scanner. The debris catcher includes a network membrane including a plurality of nano-fibers.

公开(公告)号：US20150293462A1

公开(公告)日：2015-10-15

申请号：US14748543

申请日：2015-06-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Tung-Li WU ,  Chin-Hsiang LIN ,  Heng-Hsin LIU ,  Jui-Chun PENG

IPC: G03F7/20

CPC classification number: G03F7/70725 ,  G03F7/70066 ,  G03F7/70283 ,  G03F7/70341 ,  G03F7/70641

Abstract: A lithography apparatus includes a plurality reticle edge masking assemblies (REMAs), wherein each REMA of the plurality of REMAs is positioned to receive one of a plurality of light beams, and each REMA of the plurality of REMAs comprises a movable slit for passing the received light beam therethrough. The lithography apparatus includes a controller for controlling a speed of the movable slit based on a size of the movable slit, an intensity of the one or more collimated light beams, or a material to be patterned. The lithography apparatus further includes a single mask having a single pattern, wherein the mask is configured to receive light from every REMA of the plurality of REMAs. The lithography apparatus includes a projection lens configured to receive light transmitted through the single mask, wherein the lithography apparatus is configured to introduce an immersion liquid into a space adjacent to the projection lens.

Abstract translation: 光刻设备包括多个掩模版边缘掩蔽组件（REMA），其中多个REMA中的每个REMA被定位成接收多个光束中的一个，并且多个REMA中的每个REMA包括可移动狭缝，用于使接收到的 光束通过。 光刻设备包括一个控制器，用于基于可移动狭缝的尺寸，一个或多个准直光束的强度或待图案化的材料来控制可移动狭缝的速度。 光刻设备还包括具有单一图案的单个掩模，其中所述掩模被配置为接收来自所述多个REMA的每个REMA的光。 光刻设备包括配置成接收透过单一掩模的光的投影透镜，其中所述光刻设备被配置为将浸入液体引入与所述投影透镜相邻的空间。